In this paper, MoS2 and Ni-MoS2 crystal layers were fabricated by the chemical vapor transport method with iodine as the transport agent. Two direct band edge transitions of excitons at 1.9 and 2.1 eV were observed successfully for both MoS2 and Ni-MoS2 samples using temperature-dependent optical reflectance (R) measurement. Hall effect measurements were carried out to analyze the transport behavior of carriers in MoS2 and Ni-MoS2, which indicate that the Ni-MoS2 sample is n-type and has a higher resistance and lower mobility than the MoS2 sample has. A photoconductivity spectrum was performed which shows an additional Ni doping level existing at 1.2 eV and a higher photocurrent generating only for Ni-MoS2. The differences between MoS2 and Ni-MoS2 could be attributed to the effect of Ni atoms causing small lattice imperfections to form trap states around 1.2 eV. The temperature-dependent conductivity shows the presence of two shallow levels with activation energies (84 and 6.7 meV in MoS2; 57 and 6.5 meV in Ni-MoS2). Therefore, the Ni doping level leads to high resistance, low mobility and small activation energies. A series of experimental results could provide useful guidance for the fabrication of optoelectronic devices using MoS2 structures.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Process Chemistry and Technology
- Computer Science Applications
- Fluid Flow and Transfer Processes