Abstract
Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉ZnO being parallel to the 〈0 0 0 1〉sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.
| Original language | English |
|---|---|
| Pages (from-to) | 3024-3028 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 310 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2008 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O. / Lin, Ping Yuan; Gong, Jyh Rong; Li, Ping Cheng; Lin, Tai Yuan; Lyu, Dong Yuan; Lin, Der-Yuh; Lin, Hung Ji; Li, Ta Ching; Chang, Kuo Jen; Lin, Wen Jen.
In: Journal of Crystal Growth, Vol. 310, No. 12, 01.06.2008, p. 3024-3028.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O
AU - Lin, Ping Yuan
AU - Gong, Jyh Rong
AU - Li, Ping Cheng
AU - Lin, Tai Yuan
AU - Lyu, Dong Yuan
AU - Lin, Der-Yuh
AU - Lin, Hung Ji
AU - Li, Ta Ching
AU - Chang, Kuo Jen
AU - Lin, Wen Jen
PY - 2008/6/1
Y1 - 2008/6/1
N2 - Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉ZnO being parallel to the 〈0 0 0 1〉sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.
AB - Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉ZnO being parallel to the 〈0 0 0 1〉sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.
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U2 - 10.1016/j.jcrysgro.2008.03.016
DO - 10.1016/j.jcrysgro.2008.03.016
M3 - Article
AN - SCOPUS:44149086847
VL - 310
SP - 3024
EP - 3028
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 12
ER -