Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O

Ping Yuan Lin; Jyh Rong Gong; Ping Cheng Li; Tai Yuan Lin; Dong Yuan Lyu; Der-Yuh Lin; Hung Ji Lin; Ta Ching Li; Kuo Jen Chang; Wen Jen Lin

doi:10.1016/j.jcrysgro.2008.03.016

Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N₂O

Ping Yuan Lin, Jyh Rong Gong, Ping Cheng Li, Tai Yuan Lin, Dong Yuan Lyu, Der-Yuh Lin, Hung Ji Lin, Ta Ching Li, Kuo Jen Chang, Wen Jen Lin

Department of Electronic Engineering

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N₂O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉_ZnO being parallel to the 〈0 0 0 1〉_sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (D^oX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.

Original language	English
Pages (from-to)	3024-3028
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	12
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.03.016
Publication status	Published - 2008 Jun 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Lin, P. Y., Gong, J. R., Li, P. C., Lin, T. Y., Lyu, D. Y., Lin, D-Y., Lin, H. J., Li, T. C., Chang, K. J., & Lin, W. J. (2008). Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N₂O. Journal of Crystal Growth, 310(12), 3024-3028. https://doi.org/10.1016/j.jcrysgro.2008.03.016

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title = "Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O",

abstract = "Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉ZnO being parallel to the 〈0 0 0 1〉sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.",

author = "Lin, {Ping Yuan} and Gong, {Jyh Rong} and Li, {Ping Cheng} and Lin, {Tai Yuan} and Lyu, {Dong Yuan} and Der-Yuh Lin and Lin, {Hung Ji} and Li, {Ta Ching} and Chang, {Kuo Jen} and Lin, {Wen Jen}",

year = "2008",

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doi = "10.1016/j.jcrysgro.2008.03.016",

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Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N₂O. / Lin, Ping Yuan; Gong, Jyh Rong; Li, Ping Cheng; Lin, Tai Yuan; Lyu, Dong Yuan; Lin, Der-Yuh; Lin, Hung Ji; Li, Ta Ching; Chang, Kuo Jen; Lin, Wen Jen.

In: Journal of Crystal Growth, Vol. 310, No. 12, 01.06.2008, p. 3024-3028.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O

AU - Lin, Ping Yuan

AU - Gong, Jyh Rong

AU - Li, Ping Cheng

AU - Lin, Tai Yuan

AU - Lyu, Dong Yuan

AU - Lin, Der-Yuh

AU - Lin, Hung Ji

AU - Li, Ta Ching

AU - Chang, Kuo Jen

AU - Lin, Wen Jen

PY - 2008/6/1

Y1 - 2008/6/1

N2 - Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉ZnO being parallel to the 〈0 0 0 1〉sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.

AB - Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉ZnO being parallel to the 〈0 0 0 1〉sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.

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