Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O

Ping Yuan Lin, Jyh Rong Gong, Ping Cheng Li, Tai Yuan Lin, Dong Yuan Lyu, Der-Yuh Lin, Hung Ji Lin, Ta Ching Li, Kuo Jen Chang, Wen Jen Lin

Research output: Contribution to journalArticle

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Abstract

Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉ZnO being parallel to the 〈0 0 0 1〉sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.

Original languageEnglish
Pages (from-to)3024-3028
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number12
DOIs
Publication statusPublished - 2008 Jun 1

Fingerprint

Zinc Oxide
Atomic layer deposition
Aluminum Oxide
atomic layer epitaxy
Zinc oxide
Sapphire
zinc oxides
Oxide films
oxide films
sapphire
Substrates
Buffer layers
Annealing
annealing
buffers
Photoluminescence
photoluminescence
nitrous oxides
Nitrous Oxide
diethylzinc

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Lin, Ping Yuan ; Gong, Jyh Rong ; Li, Ping Cheng ; Lin, Tai Yuan ; Lyu, Dong Yuan ; Lin, Der-Yuh ; Lin, Hung Ji ; Li, Ta Ching ; Chang, Kuo Jen ; Lin, Wen Jen. / Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 12. pp. 3024-3028.
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Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O. / Lin, Ping Yuan; Gong, Jyh Rong; Li, Ping Cheng; Lin, Tai Yuan; Lyu, Dong Yuan; Lin, Der-Yuh; Lin, Hung Ji; Li, Ta Ching; Chang, Kuo Jen; Lin, Wen Jen.

In: Journal of Crystal Growth, Vol. 310, No. 12, 01.06.2008, p. 3024-3028.

Research output: Contribution to journalArticle

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T1 - Optical and structural characteristics of ZnO films grown on (0 0 0 1) sapphire substrates by ALD using DEZn and N2O

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AU - Li, Ping Cheng

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AU - Lyu, Dong Yuan

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AU - Lin, Hung Ji

AU - Li, Ta Ching

AU - Chang, Kuo Jen

AU - Lin, Wen Jen

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N2 - Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉ZnO being parallel to the 〈0 0 0 1〉sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.

AB - Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with 〈0 0 0 1〉ZnO being parallel to the 〈0 0 0 1〉sapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.

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