Abstract
The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 433-440 |
| Number of pages | 8 |
| Journal | Materials Chemistry and Physics |
| Volume | 220 |
| DOIs | |
| Publication status | Published - 2018 Dec 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
Cite this
}
Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure. / Hsu, Hung Pin; Lin, Der Yuh; Lu, Guan Ting; Ko, Tsung Shine; Chen, Hone Zern.
In: Materials Chemistry and Physics, Vol. 220, 01.12.2018, p. 433-440.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure
AU - Hsu, Hung Pin
AU - Lin, Der Yuh
AU - Lu, Guan Ting
AU - Ko, Tsung Shine
AU - Chen, Hone Zern
PY - 2018/12/1
Y1 - 2018/12/1
N2 - The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.
AB - The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85054789518&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85054789518&partnerID=8YFLogxK
U2 - 10.1016/j.matchemphys.2018.09.002
DO - 10.1016/j.matchemphys.2018.09.002
M3 - Article
AN - SCOPUS:85054789518
VL - 220
SP - 433
EP - 440
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
ER -