Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure

Hung Pin Hsu, Der Yuh Lin, Guan Ting Lu, Tsung Shine Ko, Hone Zern Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.

Original languageEnglish
Pages (from-to)433-440
Number of pages8
JournalMaterials Chemistry and Physics
Volume220
DOIs
Publication statusPublished - 2018 Dec 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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