Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure

Hung Pin Hsu; Der Yuh Lin; Guan Ting Lu; Tsung Shine Ko; Hone Zern Chen

doi:10.1016/j.matchemphys.2018.09.002

Optical and electrical transport properties of ZnO/MoS₂ heterojunction p-n structure

Hung Pin Hsu, Der Yuh Lin, Guan Ting Lu, Tsung Shine Ko, Hone Zern Chen

Department of Electronic Engineering

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

The MoS₂/ZnO and MoS₂/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS₂/ZnO and MoS₂/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS₂ film was successfully grown on p-doped ZnO or Si. The TEM images of MoS₂/ZnO and MoS₂/Si heterojunction structures shows the MoS₂ stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS₂/ZnO and MoS₂/Si heterojunction structures as optoelectronic devices.

Original language	English
Pages (from-to)	433-440
Number of pages	8
Journal	Materials Chemistry and Physics
Volume	220
DOIs	https://doi.org/10.1016/j.matchemphys.2018.09.002
Publication status	Published - 2018 Dec 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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title = "Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure",

abstract = "The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.",

author = "Hsu, {Hung Pin} and Lin, {Der Yuh} and Lu, {Guan Ting} and Ko, {Tsung Shine} and Chen, {Hone Zern}",

year = "2018",

month = dec,

day = "1",

doi = "10.1016/j.matchemphys.2018.09.002",

language = "English",

volume = "220",

pages = "433--440",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure

AU - Hsu, Hung Pin

AU - Lin, Der Yuh

AU - Lu, Guan Ting

AU - Ko, Tsung Shine

AU - Chen, Hone Zern

PY - 2018/12/1

Y1 - 2018/12/1

N2 - The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.

AB - The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.

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