Abstract
The MoS 2 /ZnO and MoS 2 /Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS 2 /ZnO and MoS 2 /Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS 2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS 2 /ZnO and MoS 2 /Si heterojunction structures shows the MoS 2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS 2 /ZnO and MoS 2 /Si heterojunction structures as optoelectronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 433-440 |
| Number of pages | 8 |
| Journal | Materials Chemistry and Physics |
| Volume | 220 |
| DOIs | |
| Publication status | Published - 2018 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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Optical and electrical transport properties of ZnO/MoS 2 heterojunction p-n structure . / Hsu, Hung Pin; Lin, Der-Yuh; Lu, Guan Ting; Ko, Tsung-Shine; Chen, Hone Zern.
In: Materials Chemistry and Physics, Vol. 220, 01.12.2018, p. 433-440.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical and electrical transport properties of ZnO/MoS 2 heterojunction p-n structure
AU - Hsu, Hung Pin
AU - Lin, Der-Yuh
AU - Lu, Guan Ting
AU - Ko, Tsung-Shine
AU - Chen, Hone Zern
PY - 2018/12/1
Y1 - 2018/12/1
N2 - The MoS 2 /ZnO and MoS 2 /Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS 2 /ZnO and MoS 2 /Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS 2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS 2 /ZnO and MoS 2 /Si heterojunction structures shows the MoS 2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS 2 /ZnO and MoS 2 /Si heterojunction structures as optoelectronic devices.
AB - The MoS 2 /ZnO and MoS 2 /Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS 2 /ZnO and MoS 2 /Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS 2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS 2 /ZnO and MoS 2 /Si heterojunction structures shows the MoS 2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS 2 /ZnO and MoS 2 /Si heterojunction structures as optoelectronic devices.
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U2 - 10.1016/j.matchemphys.2018.09.002
DO - 10.1016/j.matchemphys.2018.09.002
M3 - Article
AN - SCOPUS:85054789518
VL - 220
SP - 433
EP - 440
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
ER -