Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure

Hung Pin Hsu, Der Yuh Lin, Guan Ting Lu, Tsung Shine Ko, Hone Zern Chen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.

Original languageEnglish
Pages (from-to)433-440
Number of pages8
JournalMaterials Chemistry and Physics
Volume220
DOIs
Publication statusPublished - 2018 Dec 1

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Transport properties
Heterojunctions
heterojunctions
transport properties
Raman spectroscopy
Electron microscopes
electron microscopes
X ray diffraction
Van der Waals forces
Thermal evaporation
Photoconductivity
optoelectronic devices
photoconductivity
Optoelectronic devices
Diffraction patterns
Sol-gel process
x rays
diffraction patterns
Crystal structure
evaporation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure",
abstract = "The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.",
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Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure. / Hsu, Hung Pin; Lin, Der Yuh; Lu, Guan Ting; Ko, Tsung Shine; Chen, Hone Zern.

In: Materials Chemistry and Physics, Vol. 220, 01.12.2018, p. 433-440.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure

AU - Hsu, Hung Pin

AU - Lin, Der Yuh

AU - Lu, Guan Ting

AU - Ko, Tsung Shine

AU - Chen, Hone Zern

PY - 2018/12/1

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AB - The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.

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