We prepared undoped and Fe-doped MoS2 layered crystals using a chemical vapor transport method to compare their optical and electrical properties. Optical behaviors of carrier transitions were observed successfully in both undoped and Fe-doped MoS2 samples using reflectance and piezoreflectance. Frequency-dependent photoconductivity (PC) measurements reveal an additional deep Fe doping level for the Fe-doped MoS2 sample. In addition, a longer carrier lifetime was calculated for the Fe-doped MoS2 sample than for the undoped MoS2 sample through PC analysis. Hall measurements were also performed for both samples and indicated that the Fe-doped MoS2 sample exhibited a higher carrier concentration and a lower mobility owing to the effect of Fe dopants. Furthermore, both samples were confirmed to have n-type carriers.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)