Optical and electrical properties of MoS2 and Fe-doped MoS 2

Song Yu Wang, Tsung Shine Ko, Cheng Ching Huang, Der Yuh Lin, Ying Sheng Huang

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30 Citations (Scopus)


We prepared undoped and Fe-doped MoS2 layered crystals using a chemical vapor transport method to compare their optical and electrical properties. Optical behaviors of carrier transitions were observed successfully in both undoped and Fe-doped MoS2 samples using reflectance and piezoreflectance. Frequency-dependent photoconductivity (PC) measurements reveal an additional deep Fe doping level for the Fe-doped MoS2 sample. In addition, a longer carrier lifetime was calculated for the Fe-doped MoS2 sample than for the undoped MoS2 sample through PC analysis. Hall measurements were also performed for both samples and indicated that the Fe-doped MoS2 sample exhibited a higher carrier concentration and a lower mobility owing to the effect of Fe dopants. Furthermore, both samples were confirmed to have n-type carriers.

Original languageEnglish
Article number04EH07
JournalJapanese Journal of Applied Physics
Issue number4 SPEC. ISSUE
Publication statusPublished - 2014 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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