Abstract
We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.
| Original language | English |
|---|---|
| Article number | 202107 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2005 May 16 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Lin, Y. J., Chu, Y. L., Huang, Y. S., & Chang, H. C. (2005). Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment. Applied Physics Letters, 86(20), 1-3. [202107]. https://doi.org/10.1063/1.1926404