Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment

Yow Jon Lin; Yow Lin Chu; Y. S. Huang; Hsing Cheng Chang

doi:10.1063/1.1926404

Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment

Yow Jon Lin, Yow Lin Chu, Y. S. Huang, Hsing Cheng Chang

Graduate Institute of Photonics

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Abstract

We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.

Original language	English
Article number	202107
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	20
DOIs	https://doi.org/10.1063/1.1926404
Publication status	Published - 2005 May 16

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Lin, Y. J., Chu, Y. L., Huang, Y. S., & Chang, H. C. (2005). Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment. Applied Physics Letters, 86(20), 1-3. [202107]. https://doi.org/10.1063/1.1926404

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abstract = "We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.",

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10.1063/1.1926404