Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment

Yow Jon Lin; Yow Lin Chu; Y. S. Huang; Hsing Cheng Chang

doi:10.1063/1.1926404

Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment

Yow Jon Lin, Yow Lin Chu, Y. S. Huang, Hsing Cheng Chang

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.

Original language	English
Article number	202107
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	20
DOIs	https://doi.org/10.1063/1.1926404
Publication status	Published - 2005 May 16

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1926404

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title = "Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment",

abstract = "We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.",

author = "Lin, {Yow Jon} and Chu, {Yow Lin} and Huang, {Y. S.} and Chang, {Hsing Cheng}",

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T1 - Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment

AU - Lin, Yow Jon

AU - Chu, Yow Lin

AU - Huang, Y. S.

AU - Chang, Hsing Cheng

PY - 2005/5/16

Y1 - 2005/5/16

N2 - We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.

AB - We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.

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