Abstract
We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.
Original language | English |
---|---|
Article number | 202107 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 20 |
DOIs | |
Publication status | Published - 2005 May 16 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)