Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment

Yow Jon Lin, Yow Lin Chu, Y. S. Huang, Hsing Cheng Chang

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Abstract

We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.

Original languageEnglish
Article number202107
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number20
DOIs
Publication statusPublished - 2005 May 16

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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