Abstract
We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.
| Original language | English |
|---|---|
| Article number | 202107 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2005 May 16 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
}
Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment. / Lin, Yow Jon; Chu, Yow Lin; Huang, Y. S.; Chang, Hsing Cheng.
In: Applied Physics Letters, Vol. 86, No. 20, 202107, 16.05.2005, p. 1-3.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical and electrical properties of heavily Mg-doped GaN upon (NH4) 2Sx treatment
AU - Lin, Yow Jon
AU - Chu, Yow Lin
AU - Huang, Y. S.
AU - Chang, Hsing Cheng
PY - 2005/5/16
Y1 - 2005/5/16
N2 - We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.
AB - We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4) 2Sx treatment on the optical and electrical properties of p -type GaN (p -GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa - VN) 2+ (MgGa: Ga vacancies occupied by Mg; VN: nitrogen vacancies) complexes near the p -GaN surface region were transformed into the (MgGa - SN) 0 (SN: N vacancies occupied by S) complexes after (NH4) 2Sx treatment, which resulted in the reduction of the ~2.8-eV PL intensity and the increase of the hole concentration near the p -GaN surface region.
UR - http://www.scopus.com/inward/record.url?scp=20844451200&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=20844451200&partnerID=8YFLogxK
U2 - 10.1063/1.1926404
DO - 10.1063/1.1926404
M3 - Article
AN - SCOPUS:20844451200
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 20
M1 - 202107
ER -