Optical and electrical characterizations of ZnMnO thin films on c-Al 2O3

Hung Ji Lin, Der Yuh Lin, Jenq Shinn Wu, Chu Shou Yang, Wu Ching Chou, Wei Hsuan Lo, Jyh Shyang Wang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have studied the manganese (Mn) composition dependence of the optical and electrical properties of ZnMnO thin films, which are grown on c-Al 2O3 substrates by plasma-assisted molecular beam epitaxy (PAMBE). The lattice constant and grain size are estimated by Xray diffraction (XRD), and it is found that the lattice constant increases and the grain size decreases with increasing Mn composition. When more Mn is incorporated into the ZnMnO thin films, a blue shift of the absorption edges and photoluminescence emission peaks are observed. Hall measurement shows n-type conduction behavior for all the samples. The decrease in mobility might be related with the increase in the number of impurity scattering centers, and the decrease in the carrier concentration can be attributed to the carrier quenching effect induced by the deep-level defects. The ac electrical response of ZnMnO is studied by impedance spectroscopy (IS). The equivalent RC circuit and parameters of the grain and grain boundary are determined.

Original languageEnglish
Article number04C122
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr 1

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Manganese
manganese
Thin films
Lattice constants
thin films
grain size
RC circuits
Chemical analysis
equivalent circuits
blue shift
Molecular beam epitaxy
Carrier concentration
Quenching
Photoluminescence
Grain boundaries
Electric properties
molecular beam epitaxy
grain boundaries
Optical properties
Diffraction

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lin, Hung Ji ; Lin, Der Yuh ; Wu, Jenq Shinn ; Yang, Chu Shou ; Chou, Wu Ching ; Lo, Wei Hsuan ; Wang, Jyh Shyang. / Optical and electrical characterizations of ZnMnO thin films on c-Al 2O3. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 4 PART 2.
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abstract = "We have studied the manganese (Mn) composition dependence of the optical and electrical properties of ZnMnO thin films, which are grown on c-Al 2O3 substrates by plasma-assisted molecular beam epitaxy (PAMBE). The lattice constant and grain size are estimated by Xray diffraction (XRD), and it is found that the lattice constant increases and the grain size decreases with increasing Mn composition. When more Mn is incorporated into the ZnMnO thin films, a blue shift of the absorption edges and photoluminescence emission peaks are observed. Hall measurement shows n-type conduction behavior for all the samples. The decrease in mobility might be related with the increase in the number of impurity scattering centers, and the decrease in the carrier concentration can be attributed to the carrier quenching effect induced by the deep-level defects. The ac electrical response of ZnMnO is studied by impedance spectroscopy (IS). The equivalent RC circuit and parameters of the grain and grain boundary are determined.",
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Optical and electrical characterizations of ZnMnO thin films on c-Al 2O3. / Lin, Hung Ji; Lin, Der Yuh; Wu, Jenq Shinn; Yang, Chu Shou; Chou, Wu Ching; Lo, Wei Hsuan; Wang, Jyh Shyang.

In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C122, 01.04.2009.

Research output: Contribution to journalArticle

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AU - Lin, Der Yuh

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AU - Yang, Chu Shou

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AU - Lo, Wei Hsuan

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