Ohmic-rectification conversion that is tuned using H2O2 for enhanced rectification and optoelectronic performance in MoS2/ZnO nanorod devices

Yow-Jon Lin, Cheng You Wu, Hsing Cheng Chang

Research output: Contribution to journalArticle

Abstract

The characteristics of a p–n junction that consists of MoS2 thin films and ZnO nanorods grown on heavily-doped n-type Si substrate are reported. The current–voltage characteristics for MoS2/ZnO nanorod devices exhibit ohmic conduction. The measured current is limited by thermionic emission in MoS2/ZnO nanorod devices that are treated with H2O2. H2O2 treatment results in the modification of the MoS2–ZnO interface, so the rectification performance for MoS2/ZnO nanorod devices is improved. H2O2 treatment also increases the responsivity of MoS2/ZnO nanorod devices to solar irradiation. This phenomenon is caused by induced ohmic-rectification conversion due to H2O2 treatment.

Original languageEnglish
Pages (from-to)22-28
Number of pages7
JournalChinese Journal of Physics
Volume61
DOIs
Publication statusPublished - 2019 Oct 1

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rectification
nanorods
thermionic emission
conduction
irradiation
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Ohmic-rectification conversion that is tuned using H2O2 for enhanced rectification and optoelectronic performance in MoS2/ZnO nanorod devices",
abstract = "The characteristics of a p–n junction that consists of MoS2 thin films and ZnO nanorods grown on heavily-doped n-type Si substrate are reported. The current–voltage characteristics for MoS2/ZnO nanorod devices exhibit ohmic conduction. The measured current is limited by thermionic emission in MoS2/ZnO nanorod devices that are treated with H2O2. H2O2 treatment results in the modification of the MoS2–ZnO interface, so the rectification performance for MoS2/ZnO nanorod devices is improved. H2O2 treatment also increases the responsivity of MoS2/ZnO nanorod devices to solar irradiation. This phenomenon is caused by induced ohmic-rectification conversion due to H2O2 treatment.",
author = "Yow-Jon Lin and Wu, {Cheng You} and Chang, {Hsing Cheng}",
year = "2019",
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journal = "Chinese Journal of Physics",
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Ohmic-rectification conversion that is tuned using H2O2 for enhanced rectification and optoelectronic performance in MoS2/ZnO nanorod devices. / Lin, Yow-Jon; Wu, Cheng You; Chang, Hsing Cheng.

In: Chinese Journal of Physics, Vol. 61, 01.10.2019, p. 22-28.

Research output: Contribution to journalArticle

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AB - The characteristics of a p–n junction that consists of MoS2 thin films and ZnO nanorods grown on heavily-doped n-type Si substrate are reported. The current–voltage characteristics for MoS2/ZnO nanorod devices exhibit ohmic conduction. The measured current is limited by thermionic emission in MoS2/ZnO nanorod devices that are treated with H2O2. H2O2 treatment results in the modification of the MoS2–ZnO interface, so the rectification performance for MoS2/ZnO nanorod devices is improved. H2O2 treatment also increases the responsivity of MoS2/ZnO nanorod devices to solar irradiation. This phenomenon is caused by induced ohmic-rectification conversion due to H2O2 treatment.

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