Ohmic-rectification conversion that is tuned using H₂O₂ for enhanced rectification and optoelectronic performance in MoS₂/ZnO nanorod devices

The characteristics of a p–n junction that consists of MoS₂ thin films and ZnO nanorods grown on heavily-doped n-type Si substrate are reported. The current–voltage characteristics for MoS₂/ZnO nanorod devices exhibit ohmic conduction. The measured current is limited by thermionic emission in MoS₂/ZnO nanorod devices that are treated with H₂O₂. H₂O₂ treatment results in the modification of the MoS₂–ZnO interface, so the rectification performance for MoS₂/ZnO nanorod devices is improved. H₂O₂ treatment also increases the responsivity of MoS₂/ZnO nanorod devices to solar irradiation. This phenomenon is caused by induced ohmic-rectification conversion due to H₂O₂ treatment.