Abstract
The characteristics of a p–n junction that consists of MoS2 thin films and ZnO nanorods grown on heavily-doped n-type Si substrate are reported. The current–voltage characteristics for MoS2/ZnO nanorod devices exhibit ohmic conduction. The measured current is limited by thermionic emission in MoS2/ZnO nanorod devices that are treated with H2O2. H2O2 treatment results in the modification of the MoS2–ZnO interface, so the rectification performance for MoS2/ZnO nanorod devices is improved. H2O2 treatment also increases the responsivity of MoS2/ZnO nanorod devices to solar irradiation. This phenomenon is caused by induced ohmic-rectification conversion due to H2O2 treatment.
| Original language | English |
|---|---|
| Pages (from-to) | 22-28 |
| Number of pages | 7 |
| Journal | Chinese Journal of Physics |
| Volume | 61 |
| DOIs | |
| Publication status | Published - 2019 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
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Ohmic-rectification conversion that is tuned using H2O2 for enhanced rectification and optoelectronic performance in MoS2/ZnO nanorod devices. / Lin, Yow-Jon; Wu, Cheng You; Chang, Hsing Cheng.
In: Chinese Journal of Physics, Vol. 61, 01.10.2019, p. 22-28.Research output: Contribution to journal › Article
TY - JOUR
T1 - Ohmic-rectification conversion that is tuned using H2O2 for enhanced rectification and optoelectronic performance in MoS2/ZnO nanorod devices
AU - Lin, Yow-Jon
AU - Wu, Cheng You
AU - Chang, Hsing Cheng
PY - 2019/10/1
Y1 - 2019/10/1
N2 - The characteristics of a p–n junction that consists of MoS2 thin films and ZnO nanorods grown on heavily-doped n-type Si substrate are reported. The current–voltage characteristics for MoS2/ZnO nanorod devices exhibit ohmic conduction. The measured current is limited by thermionic emission in MoS2/ZnO nanorod devices that are treated with H2O2. H2O2 treatment results in the modification of the MoS2–ZnO interface, so the rectification performance for MoS2/ZnO nanorod devices is improved. H2O2 treatment also increases the responsivity of MoS2/ZnO nanorod devices to solar irradiation. This phenomenon is caused by induced ohmic-rectification conversion due to H2O2 treatment.
AB - The characteristics of a p–n junction that consists of MoS2 thin films and ZnO nanorods grown on heavily-doped n-type Si substrate are reported. The current–voltage characteristics for MoS2/ZnO nanorod devices exhibit ohmic conduction. The measured current is limited by thermionic emission in MoS2/ZnO nanorod devices that are treated with H2O2. H2O2 treatment results in the modification of the MoS2–ZnO interface, so the rectification performance for MoS2/ZnO nanorod devices is improved. H2O2 treatment also increases the responsivity of MoS2/ZnO nanorod devices to solar irradiation. This phenomenon is caused by induced ohmic-rectification conversion due to H2O2 treatment.
UR - http://www.scopus.com/inward/record.url?scp=85070567340&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85070567340&partnerID=8YFLogxK
U2 - 10.1016/j.cjph.2019.07.005
DO - 10.1016/j.cjph.2019.07.005
M3 - Article
AN - SCOPUS:85070567340
VL - 61
SP - 22
EP - 28
JO - Chinese Journal of Physics
JF - Chinese Journal of Physics
SN - 0577-9073
ER -