Ohmic performance comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/graded InGaAs/GaAs layers

Yen Tang Lyu, Kuo Liang Jaw, Ching Ting Lee, Chang Da Tsai, Yow Jon Lin, Ya Tung Cherng

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Metallization systems of Ti/Ni/Au and Ti/Pt/Au were deposited onto InAs/graded InGaAs/GaAs epitaxial layers grown on GaAs substrate. Both of them exhibit good nonalloyed specific contact resistance of 1.0×10-6 and 3.0×10-6 Ω cm2 for Ti/Pt/Au and Ti/Ni/Au metallization systems, respectively. However, the thermal stability can be achieved at least up to 350 °C for Ti/Pt/Au metallization system, while the Ti/Ni/Au metallization can only thermally stabilize at 250 °C. The degradation of the specific contact resistance at high annealing temperature is attributed to the induced decomposition of InAs and graded InGaAs layers. Rutherford backscattering spectroscopy spectra and Auger electron spectroscopy depth profile were used to study the physical mechanism.

Original languageEnglish
Pages (from-to)122-126
Number of pages5
JournalMaterials Chemistry and Physics
Volume63
Issue number2
DOIs
Publication statusPublished - 2000 Feb 28

Fingerprint

Metallizing
contact resistance
Contact resistance
Auger spectroscopy
electron spectroscopy
backscattering
thermal stability
degradation
decomposition
annealing
Epitaxial layers
Rutherford backscattering spectroscopy
Auger electron spectroscopy
profiles
spectroscopy
Thermodynamic stability
Annealing
Decomposition
Degradation
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lyu, Yen Tang ; Jaw, Kuo Liang ; Lee, Ching Ting ; Tsai, Chang Da ; Lin, Yow Jon ; Cherng, Ya Tung. / Ohmic performance comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/graded InGaAs/GaAs layers. In: Materials Chemistry and Physics. 2000 ; Vol. 63, No. 2. pp. 122-126.
@article{d8cddfa08f2b42baa1b451d393c8c8b9,
title = "Ohmic performance comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/graded InGaAs/GaAs layers",
abstract = "Metallization systems of Ti/Ni/Au and Ti/Pt/Au were deposited onto InAs/graded InGaAs/GaAs epitaxial layers grown on GaAs substrate. Both of them exhibit good nonalloyed specific contact resistance of 1.0×10-6 and 3.0×10-6 Ω cm2 for Ti/Pt/Au and Ti/Ni/Au metallization systems, respectively. However, the thermal stability can be achieved at least up to 350 °C for Ti/Pt/Au metallization system, while the Ti/Ni/Au metallization can only thermally stabilize at 250 °C. The degradation of the specific contact resistance at high annealing temperature is attributed to the induced decomposition of InAs and graded InGaAs layers. Rutherford backscattering spectroscopy spectra and Auger electron spectroscopy depth profile were used to study the physical mechanism.",
author = "Lyu, {Yen Tang} and Jaw, {Kuo Liang} and Lee, {Ching Ting} and Tsai, {Chang Da} and Lin, {Yow Jon} and Cherng, {Ya Tung}",
year = "2000",
month = "2",
day = "28",
doi = "10.1016/S0254-0584(99)00208-4",
language = "English",
volume = "63",
pages = "122--126",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "2",

}

Ohmic performance comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/graded InGaAs/GaAs layers. / Lyu, Yen Tang; Jaw, Kuo Liang; Lee, Ching Ting; Tsai, Chang Da; Lin, Yow Jon; Cherng, Ya Tung.

In: Materials Chemistry and Physics, Vol. 63, No. 2, 28.02.2000, p. 122-126.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ohmic performance comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/graded InGaAs/GaAs layers

AU - Lyu, Yen Tang

AU - Jaw, Kuo Liang

AU - Lee, Ching Ting

AU - Tsai, Chang Da

AU - Lin, Yow Jon

AU - Cherng, Ya Tung

PY - 2000/2/28

Y1 - 2000/2/28

N2 - Metallization systems of Ti/Ni/Au and Ti/Pt/Au were deposited onto InAs/graded InGaAs/GaAs epitaxial layers grown on GaAs substrate. Both of them exhibit good nonalloyed specific contact resistance of 1.0×10-6 and 3.0×10-6 Ω cm2 for Ti/Pt/Au and Ti/Ni/Au metallization systems, respectively. However, the thermal stability can be achieved at least up to 350 °C for Ti/Pt/Au metallization system, while the Ti/Ni/Au metallization can only thermally stabilize at 250 °C. The degradation of the specific contact resistance at high annealing temperature is attributed to the induced decomposition of InAs and graded InGaAs layers. Rutherford backscattering spectroscopy spectra and Auger electron spectroscopy depth profile were used to study the physical mechanism.

AB - Metallization systems of Ti/Ni/Au and Ti/Pt/Au were deposited onto InAs/graded InGaAs/GaAs epitaxial layers grown on GaAs substrate. Both of them exhibit good nonalloyed specific contact resistance of 1.0×10-6 and 3.0×10-6 Ω cm2 for Ti/Pt/Au and Ti/Ni/Au metallization systems, respectively. However, the thermal stability can be achieved at least up to 350 °C for Ti/Pt/Au metallization system, while the Ti/Ni/Au metallization can only thermally stabilize at 250 °C. The degradation of the specific contact resistance at high annealing temperature is attributed to the induced decomposition of InAs and graded InGaAs layers. Rutherford backscattering spectroscopy spectra and Auger electron spectroscopy depth profile were used to study the physical mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0033907097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033907097&partnerID=8YFLogxK

U2 - 10.1016/S0254-0584(99)00208-4

DO - 10.1016/S0254-0584(99)00208-4

M3 - Article

AN - SCOPUS:0033907097

VL - 63

SP - 122

EP - 126

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 2

ER -