Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

T. S. Ko; T. C. Wang; H. G. Chen; R. C. Gao; G. S. Huang; T. C. Lu; H. C. Kuo; S. C. Wang

doi:10.1002/pssc.200674714

Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

T. S. Ko, T. C. Wang, H. G. Chen, R. C. Gao, G. S. Huang, T. C. Lu, H. C. Kuo, S. C. Wang

Department of Electronic Engineering

Research output: Contribution to journal › Conference article

Abstract

In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×10¹⁰ /cm ².

Original language	English
Pages (from-to)	2510-2514
Number of pages	5
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674714
Publication status	Published - 2007 Dec 1
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200674714

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Ko, T. S., Wang, T. C., Chen, H. G., Gao, R. C., Huang, G. S., Lu, T. C., Kuo, H. C., & Wang, S. C. (2007). Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition. Physica Status Solidi (C) Current Topics in Solid State Physics, 4(7), 2510-2514. https://doi.org/10.1002/pssc.200674714

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title = "Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition",

abstract = "In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.",

author = "Ko, {T. S.} and Wang, {T. C.} and Chen, {H. G.} and Gao, {R. C.} and Huang, {G. S.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",

year = "2007",

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doi = "10.1002/pssc.200674714",

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journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

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note = "International Workshop on Nitride Semiconductors, IWN 2006 ; Conference date: 22-10-2006 Through 27-10-2006",

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Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition. / Ko, T. S.; Wang, T. C.; Chen, H. G.; Gao, R. C.; Huang, G. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 7, 01.12.2007, p. 2510-2514.

Research output: Contribution to journal › Conference article

TY - JOUR

T1 - Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

AU - Ko, T. S.

AU - Wang, T. C.

AU - Chen, H. G.

AU - Gao, R. C.

AU - Huang, G. S.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

PY - 2007/12/1

Y1 - 2007/12/1

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AB - In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.

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