Abstract
In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×10 10 /cm 2 .
| Original language | English |
|---|---|
| Pages (from-to) | 2510-2514 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 4 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
| Event | International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition. / Ko, Tsung-Shine; Wang, T. C.; Chen, H. G.; Gao, R. C.; Huang, G. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 7, 01.12.2007, p. 2510-2514.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition
AU - Ko, Tsung-Shine
AU - Wang, T. C.
AU - Chen, H. G.
AU - Gao, R. C.
AU - Huang, G. S.
AU - Lu, T. C.
AU - Kuo, H. C.
AU - Wang, S. C.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×10 10 /cm 2 .
AB - In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×10 10 /cm 2 .
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U2 - 10.1002/pssc.200674714
DO - 10.1002/pssc.200674714
M3 - Conference article
VL - 4
SP - 2510
EP - 2514
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 7
ER -