Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

Tsung-Shine Ko, T. C. Wang, H. G. Chen, R. C. Gao, G. S. Huang, T. C. Lu, H. C. Kuo, S. C. Wang

Research output: Contribution to journalConference article

Abstract

In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×10 10 /cm 2 .

Original languageEnglish
Pages (from-to)2510-2514
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: 2006 Oct 222006 Oct 27

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metalorganic chemical vapor deposition
nucleation
sapphire
roughness
microscopy
thin films
electronics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Ko, Tsung-Shine ; Wang, T. C. ; Chen, H. G. ; Gao, R. C. ; Huang, G. S. ; Lu, T. C. ; Kuo, H. C. ; Wang, S. C. / Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2007 ; Vol. 4, No. 7. pp. 2510-2514.
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abstract = "In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×10 10 /cm 2 .",
author = "Tsung-Shine Ko and Wang, {T. C.} and Chen, {H. G.} and Gao, {R. C.} and Huang, {G. S.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",
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Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition. / Ko, Tsung-Shine; Wang, T. C.; Chen, H. G.; Gao, R. C.; Huang, G. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 7, 01.12.2007, p. 2510-2514.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

AU - Ko, Tsung-Shine

AU - Wang, T. C.

AU - Chen, H. G.

AU - Gao, R. C.

AU - Huang, G. S.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×10 10 /cm 2 .

AB - In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×10 10 /cm 2 .

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