Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

T. S. Ko, T. C. Wang, H. G. Chen, R. C. Gao, G. S. Huang, T. C. Lu, H. C. Kuo, S. C. Wang

Research output: Contribution to journalConference article

Abstract

In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.

Original languageEnglish
Pages (from-to)2510-2514
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: 2006 Oct 222006 Oct 27

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metalorganic chemical vapor deposition
nucleation
sapphire
roughness
microscopy
thin films
electronics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Ko, T. S. ; Wang, T. C. ; Chen, H. G. ; Gao, R. C. ; Huang, G. S. ; Lu, T. C. ; Kuo, H. C. ; Wang, S. C. / Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2007 ; Vol. 4, No. 7. pp. 2510-2514.
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abstract = "In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.",
author = "Ko, {T. S.} and Wang, {T. C.} and Chen, {H. G.} and Gao, {R. C.} and Huang, {G. S.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",
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Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition. / Ko, T. S.; Wang, T. C.; Chen, H. G.; Gao, R. C.; Huang, G. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 7, 01.12.2007, p. 2510-2514.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

AU - Ko, T. S.

AU - Wang, T. C.

AU - Chen, H. G.

AU - Gao, R. C.

AU - Huang, G. S.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.

AB - In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.

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