Observation of strong red photoluminescence with broadband in indium oxynitride nanoparticles

T. S. Ko, C. P. Chu, H. G. Chen, T. C. Lu, H. C. Kuo, S. C. Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Indium oxynitride nanoparticles were synthesized on a silicon substrate in nitrogen atmosphere using the method involving thermal evaporation of pure indium in a two-zone reactor. Nanoscale compositional analysis by energy dispersion spectrum showed the existence of indium oxynitride compound. X-ray diffraction analysis further confirmed high crystallization and nitrogen atom existence within the nanoparticles. Scanning electron microscopy investigations showed shape transformation from amorphous sphere to well-shaped octahedron with an average nanoparticle size ranging from 50 nm to 1 μm when the growth temperature of the substrate was increased from 600 to 900 °C. Photoluminescence study was performed on the indium oxynitride nanoparticle samples grown at different temperatures. It was found that with increasing growth temperatures there was not only the formation of high quality indium oxynitride nanoparticles but also an increase in the intensities of emissions. These nanoparticles grown at 900 °C could emit a strong photoluminescence spectrum centered around 700 nm with a broad full width at half maximum of about 250 nm, spanning the whole red segment.

Original languageEnglish
Article number073604JVA
Pages (from-to)1332-1335
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number4
DOIs
Publication statusPublished - 2006 Jul 1

Fingerprint

Indium
oxynitrides
indium
Photoluminescence
Nanoparticles
broadband
photoluminescence
nanoparticles
Growth temperature
Indium compounds
Nitrogen
Thermal evaporation
Silicon
Substrates
Crystallization
Full width at half maximum
nitrogen atoms
X ray diffraction analysis
temperature
reactors

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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title = "Observation of strong red photoluminescence with broadband in indium oxynitride nanoparticles",
abstract = "Indium oxynitride nanoparticles were synthesized on a silicon substrate in nitrogen atmosphere using the method involving thermal evaporation of pure indium in a two-zone reactor. Nanoscale compositional analysis by energy dispersion spectrum showed the existence of indium oxynitride compound. X-ray diffraction analysis further confirmed high crystallization and nitrogen atom existence within the nanoparticles. Scanning electron microscopy investigations showed shape transformation from amorphous sphere to well-shaped octahedron with an average nanoparticle size ranging from 50 nm to 1 μm when the growth temperature of the substrate was increased from 600 to 900 °C. Photoluminescence study was performed on the indium oxynitride nanoparticle samples grown at different temperatures. It was found that with increasing growth temperatures there was not only the formation of high quality indium oxynitride nanoparticles but also an increase in the intensities of emissions. These nanoparticles grown at 900 °C could emit a strong photoluminescence spectrum centered around 700 nm with a broad full width at half maximum of about 250 nm, spanning the whole red segment.",
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Observation of strong red photoluminescence with broadband in indium oxynitride nanoparticles. / Ko, T. S.; Chu, C. P.; Chen, H. G.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 24, No. 4, 073604JVA, 01.07.2006, p. 1332-1335.

Research output: Contribution to journalArticle

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T1 - Observation of strong red photoluminescence with broadband in indium oxynitride nanoparticles

AU - Ko, T. S.

AU - Chu, C. P.

AU - Chen, H. G.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

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AB - Indium oxynitride nanoparticles were synthesized on a silicon substrate in nitrogen atmosphere using the method involving thermal evaporation of pure indium in a two-zone reactor. Nanoscale compositional analysis by energy dispersion spectrum showed the existence of indium oxynitride compound. X-ray diffraction analysis further confirmed high crystallization and nitrogen atom existence within the nanoparticles. Scanning electron microscopy investigations showed shape transformation from amorphous sphere to well-shaped octahedron with an average nanoparticle size ranging from 50 nm to 1 μm when the growth temperature of the substrate was increased from 600 to 900 °C. Photoluminescence study was performed on the indium oxynitride nanoparticle samples grown at different temperatures. It was found that with increasing growth temperatures there was not only the formation of high quality indium oxynitride nanoparticles but also an increase in the intensities of emissions. These nanoparticles grown at 900 °C could emit a strong photoluminescence spectrum centered around 700 nm with a broad full width at half maximum of about 250 nm, spanning the whole red segment.

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