Observation of persistent photoconductivity in Ni-doped MoS2

Tsung-Shine Ko, Zheng Wen Chen, Der-Yuh Lin, Joonki Suh, Zheng Sheng Chen

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, Ni-doped MoS2 was grown by chemical vapor transportation. Photoconductivity results reveal that Ni-doped MoS2 has an obvious doping level of 1.2 eV and an electrical conductivity of σ ≅ 9.92 × 10-7Scm-1 at room temperature, which is lower than that of undoped MoS2 (σ ≅ 7.913 × 10-5Scm-1) owing to the impurity state caused by Ni atoms. Hall effect measurement results indicate that Ni-doped MoS2 sample is of the n-type and has a higher resistance and a lower mobility than undoped MoS2. We further fabricated undoped and Ni-doped MoS2 photodetectors to understand the operation characteristics of MoS2-based photodetectors. Persistent photoconductivity shows that both rise and fall times decreased from 0.33/0.68 to 0.14/0.43 s as Ni atoms were doped in MoS2 PDs. This work shows that Ni atoms could cause small lattice imperfections to form trap states leading to high resistance, low mobility, small activation energy and short decay time. Therefore, doping Ni atoms in MoS2 is beneficial for the application of photodetectors.

Original languageEnglish
Article number04CP09
JournalJapanese Journal of Applied Physics
Volume56
Issue number4
DOIs
Publication statusPublished - 2017 Apr 1

Fingerprint

Photoconductivity
photoconductivity
Photodetectors
photometers
Atoms
high resistance
atoms
Doping (additives)
Hall effect
crystal defects
Activation energy
Vapors
traps
Impurities
vapors
activation energy
impurities
Defects
electrical resistivity
causes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ko, Tsung-Shine ; Chen, Zheng Wen ; Lin, Der-Yuh ; Suh, Joonki ; Chen, Zheng Sheng. / Observation of persistent photoconductivity in Ni-doped MoS2 In: Japanese Journal of Applied Physics. 2017 ; Vol. 56, No. 4.
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Observation of persistent photoconductivity in Ni-doped MoS2 . / Ko, Tsung-Shine; Chen, Zheng Wen; Lin, Der-Yuh; Suh, Joonki; Chen, Zheng Sheng.

In: Japanese Journal of Applied Physics, Vol. 56, No. 4, 04CP09, 01.04.2017.

Research output: Contribution to journalArticle

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