Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions

Yu Ren Lai, Kai Fu Yu, Yong Han Lin, Jong Ching Wu, Juhn Jong Lin

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Micrometer-sized Al/AlOx/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin (≈ 1.5-2 nm thickness) insulating AlOx layer was grown on top of the Al base electrode by O2 glow discharge. The zero-bias conductances G(T) and the current-voltage characteristics of the junctions were measured in a wide temperature range 1.5-300 K. In addition to the direct tunneling conduction mechanism observed in low-G junctions, high-G junctions reveal a distinct charge transport process which manifests the thermally fluctuation-induced tunneling conduction (FITC) through short nanoconstrictions.We ascribe the experimental realization of the FITC mechanism to originating from the formations of "hot spots" (incomplete pinholes) in the AlOx layer owing to large junction-barrier interfacial roughness.

Original languageEnglish
Article number032155
JournalAIP Advances
Volume2
Issue number3
DOIs
Publication statusPublished - 2012 Dec 1

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tunnel junctions
micrometers
conduction
pinholes
glow discharges
roughness
lithography
electron beams
electrodes
electric potential
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lai, Yu Ren ; Yu, Kai Fu ; Lin, Yong Han ; Wu, Jong Ching ; Lin, Juhn Jong. / Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions. In: AIP Advances. 2012 ; Vol. 2, No. 3.
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Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions. / Lai, Yu Ren; Yu, Kai Fu; Lin, Yong Han; Wu, Jong Ching; Lin, Juhn Jong.

In: AIP Advances, Vol. 2, No. 3, 032155, 01.12.2012.

Research output: Contribution to journalArticle

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