Numerical study on the influence of piezoelectric polarization on the performance of p-on-n (0001)-face GaN/InGaN p-i-n solar cells

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Abstract

The influence of piezoelectric polarization on the performance of p-on-n (0001)-face GaN/InGaN p-i-n solar cells is investigated. Simulation results show that the energy band is tilted into the direction detrimental for carrier collection due to the polarization-induced electric field. When the indium composition of InGaN layer increases, this unfavorable effect becomes more serious which, in turn, deteriorates the device performance. This discovery demonstrates that, besides the issue of crystal quality, the problem caused by the polarization effect needs to be overcome for the development of GaN-based solar cells.

Original languageEnglish
Article number5773076
Pages (from-to)937-939
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number7
DOIs
Publication statusPublished - 2011 Jul 1

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Solar cells
Polarization
Indium
Band structure
Electric fields
Crystals
Chemical analysis
Direction compound

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

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abstract = "The influence of piezoelectric polarization on the performance of p-on-n (0001)-face GaN/InGaN p-i-n solar cells is investigated. Simulation results show that the energy band is tilted into the direction detrimental for carrier collection due to the polarization-induced electric field. When the indium composition of InGaN layer increases, this unfavorable effect becomes more serious which, in turn, deteriorates the device performance. This discovery demonstrates that, besides the issue of crystal quality, the problem caused by the polarization effect needs to be overcome for the development of GaN-based solar cells.",
author = "Jih-Yuan Chang and Yen-Kuang Kuo",
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AB - The influence of piezoelectric polarization on the performance of p-on-n (0001)-face GaN/InGaN p-i-n solar cells is investigated. Simulation results show that the energy band is tilted into the direction detrimental for carrier collection due to the polarization-induced electric field. When the indium composition of InGaN layer increases, this unfavorable effect becomes more serious which, in turn, deteriorates the device performance. This discovery demonstrates that, besides the issue of crystal quality, the problem caused by the polarization effect needs to be overcome for the development of GaN-based solar cells.

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