Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers

Y. K. Kuo, J. R. Chen, M. L. Chen, B. T. Liou

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Abstract

The physical and optical properties of compressively strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers are numerically studied. The simulation results show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAsP quantum wells can be efficiently improved by employing a compressive strain of approximately 1.24% in the InGaAsP quantum wells. The simulation results suggest that the 850-nm InGaAsP/InGaP vertical-cavity surface-emitting lasers have the best laser performance when the number of quantum wells is one, which is mainly attributed to the non-uniform hole distribution in multiple quantum wells due to high valence band offset.

Original languageEnglish
Pages (from-to)623-631
Number of pages9
JournalApplied Physics B: Lasers and Optics
Volume86
Issue number4
DOIs
Publication statusPublished - 2007 Mar

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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