The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||3 A|
|Publication status||Published - 2006 Mar 8|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)