Abstract
The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.
| Original language | English |
|---|---|
| Pages (from-to) | 1588-1590 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 3 A |
| DOIs | |
| Publication status | Published - 2006 Mar 8 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Numerical study on optimization of active regions for 1.3 μm AlGaInAs and InGaAsN material systems. / Kuo, Yen Kuang; Hsieh, Shang Wei; Chen, Hsiu Fen.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 3 A, 08.03.2006, p. 1588-1590.Research output: Contribution to journal › Article
TY - JOUR
T1 - Numerical study on optimization of active regions for 1.3 μm AlGaInAs and InGaAsN material systems
AU - Kuo, Yen Kuang
AU - Hsieh, Shang Wei
AU - Chen, Hsiu Fen
PY - 2006/3/8
Y1 - 2006/3/8
N2 - The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.
AB - The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.
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U2 - 10.1143/JJAP.45.1588
DO - 10.1143/JJAP.45.1588
M3 - Article
AN - SCOPUS:33644880876
VL - 45
SP - 1588
EP - 1590
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 A
ER -