Numerical study on optimization of active regions for 1.3 μm AlGaInAs and InGaAsN material systems

Yen Kuang Kuo; Shang Wei Hsieh; Hsiu Fen Chen

doi:10.1143/JJAP.45.1588

Numerical study on optimization of active regions for 1.3 μm AlGaInAs and InGaAsN material systems

Yen Kuang Kuo, Shang Wei Hsieh, Hsiu Fen Chen

Department of Physics

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1 Citation (Scopus)

Abstract

The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In_0.36Ga_0.64As_0.99N _0.01 (6 nm)/GaAs_0.99N_0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.

Original language	English
Pages (from-to)	1588-1590
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	3 A
DOIs	https://doi.org/10.1143/JJAP.45.1588
Publication status	Published - 2006 Mar 8

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Kuo, Y. K., Hsieh, S. W., & Chen, H. F. (2006). Numerical study on optimization of active regions for 1.3 μm AlGaInAs and InGaAsN material systems. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(3 A), 1588-1590. https://doi.org/10.1143/JJAP.45.1588

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title = "Numerical study on optimization of active regions for 1.3 μm AlGaInAs and InGaAsN material systems",

abstract = "The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.",

author = "Kuo, {Yen Kuang} and Hsieh, {Shang Wei} and Chen, {Hsiu Fen}",

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AU - Kuo, Yen Kuang

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PY - 2006/3/8

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N2 - The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.

AB - The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.

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Access to Document

10.1143/JJAP.45.1588