Numerical study on optimization of active regions for 1.3 μm AlGaInAs and InGaAsN material systems

Yen-Kuang Kuo, Shang Wei Hsieh, Hsiu Fen Chen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.

Original languageEnglish
Pages (from-to)1588-1590
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number3 A
DOIs
Publication statusPublished - 2006 Mar 8

Fingerprint

Ridge waveguides
optimization
Lasers
ridges
waveguides
lasers
Stimulated emission
stimulated emission
operating temperature
Optical properties
simulation
Semiconductor materials
slopes
optical properties
Temperature
temperature dependence
Electrons
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Numerical study on optimization of active regions for 1.3 μm AlGaInAs and InGaAsN material systems",
abstract = "The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.",
author = "Yen-Kuang Kuo and Hsieh, {Shang Wei} and Chen, {Hsiu Fen}",
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Numerical study on optimization of active regions for 1.3 μm AlGaInAs and InGaAsN material systems. / Kuo, Yen-Kuang; Hsieh, Shang Wei; Chen, Hsiu Fen.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 3 A, 08.03.2006, p. 1588-1590.

Research output: Contribution to journalArticle

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AB - The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.

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