Numerical study on optimization of active layer structures for GaN/AlGaN multiple-quantum-well laser diodes

Jun Rong Chen, Tsung-Shine Ko, Po Yuan Su, Tein Chang Lu, Hao Chung Kuo, Yen-Kuang Kuo, Shing Chung Wang

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Theoretical analysis for different active layer structures is performed to minimize the laser threshold current of the ultraviolet GaN/AlGaN multiple-quantum-well laser diodes by using advanced device simulation. The simulation results show that the lower threshold current can be obtained when the number of quantum wells is two or three and the aluminum composition in the barrier layer is about 10%-12%. This result is attributed to several different effects including electron leakage current, nonuniform carrier distribution, interface charge density induced by spontaneous and piezoelectric polarization, and optical confinement factor. These internal physical mechanisms are investigated by theoretical calculation to analyze the effects of quantum-well number and different aluminum compositions in barrier layer on laser threshold properties. Furthermore, the effect of quantum-well thickness is discussed as well. It is found that the optimal quantum-well thickness is about 3 nm due to the balance of the advantages of a large confinement factor against the disadvantages of significant quantum-confined Stark effect (QCSE).

Original languageEnglish
Pages (from-to)3155-3165
Number of pages11
JournalJournal of Lightwave Technology
Volume26
Issue number17
DOIs
Publication statusPublished - 2008 Sep 1

Fingerprint

quantum well lasers
semiconductor lasers
quantum wells
optimization
barrier layers
threshold currents
aluminum
Stark effect
lasers
leakage
simulation
thresholds
polarization
electrons

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Chen, Jun Rong ; Ko, Tsung-Shine ; Su, Po Yuan ; Lu, Tein Chang ; Kuo, Hao Chung ; Kuo, Yen-Kuang ; Wang, Shing Chung. / Numerical study on optimization of active layer structures for GaN/AlGaN multiple-quantum-well laser diodes. In: Journal of Lightwave Technology. 2008 ; Vol. 26, No. 17. pp. 3155-3165.
@article{c5db1e4b95b34ff08698e4ca6d617c9d,
title = "Numerical study on optimization of active layer structures for GaN/AlGaN multiple-quantum-well laser diodes",
abstract = "Theoretical analysis for different active layer structures is performed to minimize the laser threshold current of the ultraviolet GaN/AlGaN multiple-quantum-well laser diodes by using advanced device simulation. The simulation results show that the lower threshold current can be obtained when the number of quantum wells is two or three and the aluminum composition in the barrier layer is about 10{\%}-12{\%}. This result is attributed to several different effects including electron leakage current, nonuniform carrier distribution, interface charge density induced by spontaneous and piezoelectric polarization, and optical confinement factor. These internal physical mechanisms are investigated by theoretical calculation to analyze the effects of quantum-well number and different aluminum compositions in barrier layer on laser threshold properties. Furthermore, the effect of quantum-well thickness is discussed as well. It is found that the optimal quantum-well thickness is about 3 nm due to the balance of the advantages of a large confinement factor against the disadvantages of significant quantum-confined Stark effect (QCSE).",
author = "Chen, {Jun Rong} and Tsung-Shine Ko and Su, {Po Yuan} and Lu, {Tein Chang} and Kuo, {Hao Chung} and Yen-Kuang Kuo and Wang, {Shing Chung}",
year = "2008",
month = "9",
day = "1",
doi = "10.1109/JLT.2008.926939",
language = "English",
volume = "26",
pages = "3155--3165",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "17",

}

Numerical study on optimization of active layer structures for GaN/AlGaN multiple-quantum-well laser diodes. / Chen, Jun Rong; Ko, Tsung-Shine; Su, Po Yuan; Lu, Tein Chang; Kuo, Hao Chung; Kuo, Yen-Kuang; Wang, Shing Chung.

In: Journal of Lightwave Technology, Vol. 26, No. 17, 01.09.2008, p. 3155-3165.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Numerical study on optimization of active layer structures for GaN/AlGaN multiple-quantum-well laser diodes

AU - Chen, Jun Rong

AU - Ko, Tsung-Shine

AU - Su, Po Yuan

AU - Lu, Tein Chang

AU - Kuo, Hao Chung

AU - Kuo, Yen-Kuang

AU - Wang, Shing Chung

PY - 2008/9/1

Y1 - 2008/9/1

N2 - Theoretical analysis for different active layer structures is performed to minimize the laser threshold current of the ultraviolet GaN/AlGaN multiple-quantum-well laser diodes by using advanced device simulation. The simulation results show that the lower threshold current can be obtained when the number of quantum wells is two or three and the aluminum composition in the barrier layer is about 10%-12%. This result is attributed to several different effects including electron leakage current, nonuniform carrier distribution, interface charge density induced by spontaneous and piezoelectric polarization, and optical confinement factor. These internal physical mechanisms are investigated by theoretical calculation to analyze the effects of quantum-well number and different aluminum compositions in barrier layer on laser threshold properties. Furthermore, the effect of quantum-well thickness is discussed as well. It is found that the optimal quantum-well thickness is about 3 nm due to the balance of the advantages of a large confinement factor against the disadvantages of significant quantum-confined Stark effect (QCSE).

AB - Theoretical analysis for different active layer structures is performed to minimize the laser threshold current of the ultraviolet GaN/AlGaN multiple-quantum-well laser diodes by using advanced device simulation. The simulation results show that the lower threshold current can be obtained when the number of quantum wells is two or three and the aluminum composition in the barrier layer is about 10%-12%. This result is attributed to several different effects including electron leakage current, nonuniform carrier distribution, interface charge density induced by spontaneous and piezoelectric polarization, and optical confinement factor. These internal physical mechanisms are investigated by theoretical calculation to analyze the effects of quantum-well number and different aluminum compositions in barrier layer on laser threshold properties. Furthermore, the effect of quantum-well thickness is discussed as well. It is found that the optimal quantum-well thickness is about 3 nm due to the balance of the advantages of a large confinement factor against the disadvantages of significant quantum-confined Stark effect (QCSE).

UR - http://www.scopus.com/inward/record.url?scp=60149105493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60149105493&partnerID=8YFLogxK

U2 - 10.1109/JLT.2008.926939

DO - 10.1109/JLT.2008.926939

M3 - Article

AN - SCOPUS:60149105493

VL - 26

SP - 3155

EP - 3165

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

SN - 0733-8724

IS - 17

ER -