Abstract
Theoretical analysis for InGaP/AlGaInP laser diodes with different ridge waveguide structures is performed to investigate the lateral mode behavior using advanced device simulation. The internal physical mechanisms including temperature-induced changes in the refractive index profile, spatial hole burning effect, lateral carrier distribution, and gain profile variation with increasing input current are discussed by theoretical calculation to analyze the effects of different ridge structures on the lateral mode behavior of 660-nm AlGaInP laser diodes. The simulation results show that the use of narrow and shallow ridge geometry is the approach to obtaining single mode operation. Furthermore, it is found that the different values of the ridge height cause the lateral carrier distribution within the active region to be varied, which is also an important factor in determining the emergence of the first order lateral mode in addition to the geometry-dependent waveguide cutoff condition.
| Original language | English |
|---|---|
| Pages (from-to) | 375-382 |
| Number of pages | 8 |
| Journal | Optical Review |
| Volume | 16 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2009 May 1 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
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Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes. / Chen, Jun Rong; Wu, Yung Chi; Lu, Tien Chang; Kuo, Hao Chung; Kuo, Yen-Kuang; Wang, Shing Chung.
In: Optical Review, Vol. 16, No. 3, 01.05.2009, p. 375-382.Research output: Contribution to journal › Article
TY - JOUR
T1 - Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes
AU - Chen, Jun Rong
AU - Wu, Yung Chi
AU - Lu, Tien Chang
AU - Kuo, Hao Chung
AU - Kuo, Yen-Kuang
AU - Wang, Shing Chung
PY - 2009/5/1
Y1 - 2009/5/1
N2 - Theoretical analysis for InGaP/AlGaInP laser diodes with different ridge waveguide structures is performed to investigate the lateral mode behavior using advanced device simulation. The internal physical mechanisms including temperature-induced changes in the refractive index profile, spatial hole burning effect, lateral carrier distribution, and gain profile variation with increasing input current are discussed by theoretical calculation to analyze the effects of different ridge structures on the lateral mode behavior of 660-nm AlGaInP laser diodes. The simulation results show that the use of narrow and shallow ridge geometry is the approach to obtaining single mode operation. Furthermore, it is found that the different values of the ridge height cause the lateral carrier distribution within the active region to be varied, which is also an important factor in determining the emergence of the first order lateral mode in addition to the geometry-dependent waveguide cutoff condition.
AB - Theoretical analysis for InGaP/AlGaInP laser diodes with different ridge waveguide structures is performed to investigate the lateral mode behavior using advanced device simulation. The internal physical mechanisms including temperature-induced changes in the refractive index profile, spatial hole burning effect, lateral carrier distribution, and gain profile variation with increasing input current are discussed by theoretical calculation to analyze the effects of different ridge structures on the lateral mode behavior of 660-nm AlGaInP laser diodes. The simulation results show that the use of narrow and shallow ridge geometry is the approach to obtaining single mode operation. Furthermore, it is found that the different values of the ridge height cause the lateral carrier distribution within the active region to be varied, which is also an important factor in determining the emergence of the first order lateral mode in addition to the geometry-dependent waveguide cutoff condition.
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U2 - 10.1007/s10043-009-0071-y
DO - 10.1007/s10043-009-0071-y
M3 - Article
AN - SCOPUS:67149099147
VL - 16
SP - 375
EP - 382
JO - Optical Review
JF - Optical Review
SN - 1340-6000
IS - 3
ER -