Abstract
In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.
| Original language | English |
|---|---|
| Pages (from-to) | 497-506 |
| Number of pages | 10 |
| Journal | Applied Physics B: Lasers and Optics |
| Volume | 93 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - 2008 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers. / Kuo, Yen-Kuang; Yen, S. H.; Yao, M. W.; Tsai, M. C.; Chen, M. L.; Liou, B. T.
In: Applied Physics B: Lasers and Optics, Vol. 93, No. 2-3, 01.11.2008, p. 497-506.Research output: Contribution to journal › Article
TY - JOUR
T1 - Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers
AU - Kuo, Yen-Kuang
AU - Yen, S. H.
AU - Yao, M. W.
AU - Tsai, M. C.
AU - Chen, M. L.
AU - Liou, B. T.
PY - 2008/11/1
Y1 - 2008/11/1
N2 - In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.
AB - In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.
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U2 - 10.1007/s00340-008-3184-2
DO - 10.1007/s00340-008-3184-2
M3 - Article
AN - SCOPUS:55349137342
VL - 93
SP - 497
EP - 506
JO - Applied Physics B: Lasers and Optics
JF - Applied Physics B: Lasers and Optics
SN - 0946-2171
IS - 2-3
ER -