Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers

Yen-Kuang Kuo; S. H. Yen; M. W. Yao; M. C. Tsai; M. L. Chen; B. T. Liou

doi:10.1007/s00340-008-3184-2

Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers

Yen-Kuang Kuo, S. H. Yen, M. W. Yao, M. C. Tsai, M. L. Chen, B. T. Liou

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.

Original language	English
Pages (from-to)	497-506
Number of pages	10
Journal	Applied Physics B: Lasers and Optics
Volume	93
Issue number	2-3
DOIs	https://doi.org/10.1007/s00340-008-3184-2
Publication status	Published - 2008 Nov 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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title = "Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers",

abstract = "In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.",

author = "Yen-Kuang Kuo and Yen, {S. H.} and Yao, {M. W.} and Tsai, {M. C.} and Chen, {M. L.} and Liou, {B. T.}",

year = "2008",

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doi = "10.1007/s00340-008-3184-2",

language = "English",

volume = "93",

pages = "497--506",

journal = "Applied Physics B: Lasers and Optics",

issn = "0946-2171",

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TY - JOUR

T1 - Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers

AU - Kuo, Yen-Kuang

AU - Yen, S. H.

AU - Yao, M. W.

AU - Tsai, M. C.

AU - Chen, M. L.

AU - Liou, B. T.

PY - 2008/11/1

Y1 - 2008/11/1

N2 - In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.

AB - In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.

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