Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers

Yen-Kuang Kuo, S. H. Yen, M. W. Yao, M. C. Tsai, M. L. Chen, B. T. Liou

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.

Original languageEnglish
Pages (from-to)497-506
Number of pages10
JournalApplied Physics B: Lasers and Optics
Volume93
Issue number2-3
DOIs
Publication statusPublished - 2008 Nov 1

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quantum well lasers
quantum wells
threshold currents
lasers
simulation
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Kuo, Yen-Kuang ; Yen, S. H. ; Yao, M. W. ; Tsai, M. C. ; Chen, M. L. ; Liou, B. T. / Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers. In: Applied Physics B: Lasers and Optics. 2008 ; Vol. 93, No. 2-3. pp. 497-506.
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abstract = "In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.",
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Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers. / Kuo, Yen-Kuang; Yen, S. H.; Yao, M. W.; Tsai, M. C.; Chen, M. L.; Liou, B. T.

In: Applied Physics B: Lasers and Optics, Vol. 93, No. 2-3, 01.11.2008, p. 497-506.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers

AU - Kuo, Yen-Kuang

AU - Yen, S. H.

AU - Yao, M. W.

AU - Tsai, M. C.

AU - Chen, M. L.

AU - Liou, B. T.

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AB - In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.

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