Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers

Yen-Kuang Kuo, S. H. Yen, M. W. Yao, M. C. Tsai, M. L. Chen, B. T. Liou

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Abstract

In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.

Original languageEnglish
Pages (from-to)497-506
Number of pages10
JournalApplied Physics B: Lasers and Optics
Volume93
Issue number2-3
DOIs
Publication statusPublished - 2008 Nov 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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