Abstract
In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.
| Original language | English |
|---|---|
| Pages (from-to) | 156-164 |
| Number of pages | 9 |
| Journal | Optics Communications |
| Volume | 275 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2007 Jul 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering