Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers

Yen Kuang Kuo, Sheng Horng Yen, Ming Wei Yao, Mei Ling Chen, Bo Ting Liou

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.

Original languageEnglish
Pages (from-to)156-164
Number of pages9
JournalOptics Communications
Volume275
Issue number1
DOIs
Publication statusPublished - 2007 Jul 1

Fingerprint

Semiconductor lasers
Optical properties
semiconductor lasers
optical properties
Tensile strain
lasers
Lasers
systems simulation
Transparency
Carrier concentration
cavities
temperature
Semiconductor materials
Temperature
simulation
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Cite this

Kuo, Yen Kuang ; Yen, Sheng Horng ; Yao, Ming Wei ; Chen, Mei Ling ; Liou, Bo Ting. / Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers. In: Optics Communications. 2007 ; Vol. 275, No. 1. pp. 156-164.
@article{d6c3d76d1cae4643b75fa320d2d2e72c,
title = "Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers",
abstract = "In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39{\%}, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.",
author = "Kuo, {Yen Kuang} and Yen, {Sheng Horng} and Yao, {Ming Wei} and Chen, {Mei Ling} and Liou, {Bo Ting}",
year = "2007",
month = "7",
day = "1",
doi = "10.1016/j.optcom.2007.02.025",
language = "English",
volume = "275",
pages = "156--164",
journal = "Optics Communications",
issn = "0030-4018",
publisher = "Elsevier",
number = "1",

}

Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers. / Kuo, Yen Kuang; Yen, Sheng Horng; Yao, Ming Wei; Chen, Mei Ling; Liou, Bo Ting.

In: Optics Communications, Vol. 275, No. 1, 01.07.2007, p. 156-164.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers

AU - Kuo, Yen Kuang

AU - Yen, Sheng Horng

AU - Yao, Ming Wei

AU - Chen, Mei Ling

AU - Liou, Bo Ting

PY - 2007/7/1

Y1 - 2007/7/1

N2 - In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.

AB - In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.

UR - http://www.scopus.com/inward/record.url?scp=34248215128&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248215128&partnerID=8YFLogxK

U2 - 10.1016/j.optcom.2007.02.025

DO - 10.1016/j.optcom.2007.02.025

M3 - Article

AN - SCOPUS:34248215128

VL - 275

SP - 156

EP - 164

JO - Optics Communications

JF - Optics Communications

SN - 0030-4018

IS - 1

ER -