Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers

Yen Kuang Kuo; Sheng Horng Yen; Ming Wei Yao; Mei Ling Chen; Bo Ting Liou

doi:10.1016/j.optcom.2007.02.025

Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers

Yen Kuang Kuo, Sheng Horng Yen, Ming Wei Yao, Mei Ling Chen, Bo Ting Liou

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.

Original language	English
Pages (from-to)	156-164
Number of pages	9
Journal	Optics Communications
Volume	275
Issue number	1
DOIs	https://doi.org/10.1016/j.optcom.2007.02.025
Publication status	Published - 2007 Jul 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

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@article{d6c3d76d1cae4643b75fa320d2d2e72c,

title = "Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers",

abstract = "In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.",

author = "Kuo, {Yen Kuang} and Yen, {Sheng Horng} and Yao, {Ming Wei} and Chen, {Mei Ling} and Liou, {Bo Ting}",

year = "2007",

month = jul,

day = "1",

doi = "10.1016/j.optcom.2007.02.025",

language = "English",

volume = "275",

pages = "156--164",

journal = "Optics Communications",

issn = "0030-4018",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers

AU - Kuo, Yen Kuang

AU - Yen, Sheng Horng

AU - Yao, Ming Wei

AU - Chen, Mei Ling

AU - Liou, Bo Ting

PY - 2007/7/1

Y1 - 2007/7/1

N2 - In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.

AB - In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.

UR - http://www.scopus.com/inward/record.url?scp=34248215128&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248215128&partnerID=8YFLogxK

U2 - 10.1016/j.optcom.2007.02.025

DO - 10.1016/j.optcom.2007.02.025

M3 - Article

AN - SCOPUS:34248215128

VL - 275

SP - 156

EP - 164

JO - Optics Communications

JF - Optics Communications

SN - 0030-4018

IS - 1

ER -