Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers

Yen Kuang Kuo, Sheng Horng Yen, Ming Wei Yao, Mei Ling Chen, Bo Ting Liou

Research output: Contribution to journalArticle

7 Citations (Scopus)


In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.

Original languageEnglish
Pages (from-to)156-164
Number of pages9
JournalOptics Communications
Issue number1
Publication statusPublished - 2007 Jul 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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