Abstract
In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.
| Original language | English |
|---|---|
| Pages (from-to) | 156-164 |
| Number of pages | 9 |
| Journal | Optics Communications |
| Volume | 275 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2007 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering
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Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers. / Kuo, Yen Kuang; Yen, Sheng Horng; Yao, Ming Wei; Chen, Mei Ling; Liou, Bo Ting.
In: Optics Communications, Vol. 275, No. 1, 01.07.2007, p. 156-164.Research output: Contribution to journal › Article
TY - JOUR
T1 - Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers
AU - Kuo, Yen Kuang
AU - Yen, Sheng Horng
AU - Yao, Ming Wei
AU - Chen, Mei Ling
AU - Liou, Bo Ting
PY - 2007/7/1
Y1 - 2007/7/1
N2 - In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.
AB - In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.
UR - http://www.scopus.com/inward/record.url?scp=34248215128&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34248215128&partnerID=8YFLogxK
U2 - 10.1016/j.optcom.2007.02.025
DO - 10.1016/j.optcom.2007.02.025
M3 - Article
AN - SCOPUS:34248215128
VL - 275
SP - 156
EP - 164
JO - Optics Communications
JF - Optics Communications
SN - 0030-4018
IS - 1
ER -