TY - GEN
T1 - Numerical study on efficiency droop of blue InGaN light-emitting diodes
AU - Kuo, Yen Kuang
AU - Chang, Jih Yuan
AU - Chen, Jen De
PY - 2011/5/13
Y1 - 2011/5/13
N2 - Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.
AB - Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.
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U2 - 10.1117/12.874849
DO - 10.1117/12.874849
M3 - Conference contribution
AN - SCOPUS:79955765030
SN - 9780819484703
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics and Simulation of Optoelectronic Devices XIX
T2 - Physics and Simulation of Optoelectronic Devices XIX
Y2 - 24 January 2011 through 27 January 2011
ER -