Abstract
Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.
| Original language | English |
|---|---|
| Title of host publication | Physics and Simulation of Optoelectronic Devices XIX |
| DOIs | |
| Publication status | Published - 2011 May 13 |
| Event | Physics and Simulation of Optoelectronic Devices XIX - San Francisco, CA, United States Duration: 2011 Jan 24 → 2011 Jan 27 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 7933 |
| ISSN (Print) | 0277-786X |
Other
| Other | Physics and Simulation of Optoelectronic Devices XIX |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 11-01-24 → 11-01-27 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
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Numerical study on efficiency droop of blue InGaN light-emitting diodes. / Kuo, Yen Kuang; Chang, Jih Yuan; Chen, Jen De.
Physics and Simulation of Optoelectronic Devices XIX. 2011. 793317 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7933).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Numerical study on efficiency droop of blue InGaN light-emitting diodes
AU - Kuo, Yen Kuang
AU - Chang, Jih Yuan
AU - Chen, Jen De
PY - 2011/5/13
Y1 - 2011/5/13
N2 - Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.
AB - Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.
UR - http://www.scopus.com/inward/record.url?scp=79955765030&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955765030&partnerID=8YFLogxK
U2 - 10.1117/12.874849
DO - 10.1117/12.874849
M3 - Conference contribution
AN - SCOPUS:79955765030
SN - 9780819484703
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics and Simulation of Optoelectronic Devices XIX
ER -