Numerical study on efficiency droop of blue InGaN light-emitting diodes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XIX
DOIs
Publication statusPublished - 2011 May 13
EventPhysics and Simulation of Optoelectronic Devices XIX - San Francisco, CA, United States
Duration: 2011 Jan 242011 Jan 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7933
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XIX
CountryUnited States
CitySan Francisco, CA
Period11-01-2411-01-27

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kuo, Y. K., Chang, J. Y., & Chen, J. D. (2011). Numerical study on efficiency droop of blue InGaN light-emitting diodes. In Physics and Simulation of Optoelectronic Devices XIX [793317] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7933). https://doi.org/10.1117/12.874849