Numerical study on efficiency droop of blue InGaN light-emitting diodes

Yen Kuang Kuo; Jih Yuan Chang; Jen De Chen

doi:10.1117/12.874849

Numerical study on efficiency droop of blue InGaN light-emitting diodes

Yen Kuang Kuo, Jih Yuan Chang, Jen De Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.

Original language	English
Title of host publication	Physics and Simulation of Optoelectronic Devices XIX
DOIs	https://doi.org/10.1117/12.874849
Publication status	Published - 2011 May 13
Event	Physics and Simulation of Optoelectronic Devices XIX - San Francisco, CA, United States Duration: 2011 Jan 24 → 2011 Jan 27

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7933
ISSN (Print)	0277-786X

Other

Other	Physics and Simulation of Optoelectronic Devices XIX
Country	United States
City	San Francisco, CA
Period	11-01-24 → 11-01-27

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.874849

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Cite this

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title = "Numerical study on efficiency droop of blue InGaN light-emitting diodes",

abstract = "Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.",

author = "Kuo, {Yen Kuang} and Chang, {Jih Yuan} and Chen, {Jen De}",

year = "2011",

month = may,

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doi = "10.1117/12.874849",

language = "English",

isbn = "9780819484703",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Physics and Simulation of Optoelectronic Devices XIX",

note = "Physics and Simulation of Optoelectronic Devices XIX ; Conference date: 24-01-2011 Through 27-01-2011",

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Kuo, YK , Chang, JY & Chen, JD 2011, Numerical study on efficiency droop of blue InGaN light-emitting diodes. in Physics and Simulation of Optoelectronic Devices XIX., 793317, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7933, Physics and Simulation of Optoelectronic Devices XIX, San Francisco, CA, United States, 11-01-24. https://doi.org/10.1117/12.874849

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N2 - Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.

AB - Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.

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