Numerical study on efficiency droop of blue InGaN light-emitting diodes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XIX
DOIs
Publication statusPublished - 2011 May 13
EventPhysics and Simulation of Optoelectronic Devices XIX - San Francisco, CA, United States
Duration: 2011 Jan 242011 Jan 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7933
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XIX
CountryUnited States
CitySan Francisco, CA
Period11-01-2411-01-27

Fingerprint

InGaN
Diode
Light emitting diodes
Numerical Study
light emitting diodes
Electron
Band structure
Electrons
electrons
Overflow
Band Structure
radiative recombination
Recombination
energy bands
Injection
Simulation
Diagram
simulation
Enhancement
diagrams

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kuo, Y. K., Chang, J. Y., & Chen, J. D. (2011). Numerical study on efficiency droop of blue InGaN light-emitting diodes. In Physics and Simulation of Optoelectronic Devices XIX [793317] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7933). https://doi.org/10.1117/12.874849
Kuo, Yen Kuang ; Chang, Jih Yuan ; Chen, Jen De. / Numerical study on efficiency droop of blue InGaN light-emitting diodes. Physics and Simulation of Optoelectronic Devices XIX. 2011. (Proceedings of SPIE - The International Society for Optical Engineering).
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Kuo, YK, Chang, JY & Chen, JD 2011, Numerical study on efficiency droop of blue InGaN light-emitting diodes. in Physics and Simulation of Optoelectronic Devices XIX., 793317, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7933, Physics and Simulation of Optoelectronic Devices XIX, San Francisco, CA, United States, 11-01-24. https://doi.org/10.1117/12.874849

Numerical study on efficiency droop of blue InGaN light-emitting diodes. / Kuo, Yen Kuang; Chang, Jih Yuan; Chen, Jen De.

Physics and Simulation of Optoelectronic Devices XIX. 2011. 793317 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7933).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Kuo YK, Chang JY, Chen JD. Numerical study on efficiency droop of blue InGaN light-emitting diodes. In Physics and Simulation of Optoelectronic Devices XIX. 2011. 793317. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.874849