Abstract
In blue InGaN light-emitting diodes (LEDs), the intuitive approaches to suppress Auger recombination by reducing carrier density, e.g., increasing the number of quantum wells (QWs) and thickening the width of wells, suffer from nonuniform carrier distribution and more severe spatial separation of electron and hole wave functions. To resolve this issue, LED structures with thick InGaN wells and polarization-matched AlGaInN barriers are proposed theoretically. Furthermore, the number of QWs is reduced for the purpose of mitigating the additional compressive strain in AlGaInN barriers. Simulation results reveal that, in the proposed structures, the quantum-confined Stark effect in strained wells is nearly eliminated through the utilization of polarization-matched barriers, which efficiently promotes internal quantum efficiency. Furthermore, the phenomenon of efficiency droop is also markedly improved because of the uniformly distributed or dispersed carriers, and accordingly the suppressed Auger recombination.
| Original language | English |
|---|---|
| Pages (from-to) | 3158-3161 |
| Number of pages | 4 |
| Journal | Optics Letters |
| Volume | 38 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2013 Aug 23 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
Cite this
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Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration. / Chang, Jih-Yuan; Chen, Fang Ming; Kuo, Yen-Kuang; Shih, Ya Hsuan; Sheu, Jinn Kong; Lai, Wei Chih; Liu, Heng.
In: Optics Letters, Vol. 38, No. 16, 23.08.2013, p. 3158-3161.Research output: Contribution to journal › Article
TY - JOUR
T1 - Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration
AU - Chang, Jih-Yuan
AU - Chen, Fang Ming
AU - Kuo, Yen-Kuang
AU - Shih, Ya Hsuan
AU - Sheu, Jinn Kong
AU - Lai, Wei Chih
AU - Liu, Heng
PY - 2013/8/23
Y1 - 2013/8/23
N2 - In blue InGaN light-emitting diodes (LEDs), the intuitive approaches to suppress Auger recombination by reducing carrier density, e.g., increasing the number of quantum wells (QWs) and thickening the width of wells, suffer from nonuniform carrier distribution and more severe spatial separation of electron and hole wave functions. To resolve this issue, LED structures with thick InGaN wells and polarization-matched AlGaInN barriers are proposed theoretically. Furthermore, the number of QWs is reduced for the purpose of mitigating the additional compressive strain in AlGaInN barriers. Simulation results reveal that, in the proposed structures, the quantum-confined Stark effect in strained wells is nearly eliminated through the utilization of polarization-matched barriers, which efficiently promotes internal quantum efficiency. Furthermore, the phenomenon of efficiency droop is also markedly improved because of the uniformly distributed or dispersed carriers, and accordingly the suppressed Auger recombination.
AB - In blue InGaN light-emitting diodes (LEDs), the intuitive approaches to suppress Auger recombination by reducing carrier density, e.g., increasing the number of quantum wells (QWs) and thickening the width of wells, suffer from nonuniform carrier distribution and more severe spatial separation of electron and hole wave functions. To resolve this issue, LED structures with thick InGaN wells and polarization-matched AlGaInN barriers are proposed theoretically. Furthermore, the number of QWs is reduced for the purpose of mitigating the additional compressive strain in AlGaInN barriers. Simulation results reveal that, in the proposed structures, the quantum-confined Stark effect in strained wells is nearly eliminated through the utilization of polarization-matched barriers, which efficiently promotes internal quantum efficiency. Furthermore, the phenomenon of efficiency droop is also markedly improved because of the uniformly distributed or dispersed carriers, and accordingly the suppressed Auger recombination.
UR - http://www.scopus.com/inward/record.url?scp=84882279365&partnerID=8YFLogxK
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U2 - 10.1364/OL.38.003158
DO - 10.1364/OL.38.003158
M3 - Article
C2 - 24104675
AN - SCOPUS:84882279365
VL - 38
SP - 3158
EP - 3161
JO - Optics Letters
JF - Optics Letters
SN - 0146-9592
IS - 16
ER -