Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration

Jih-Yuan Chang, Fang Ming Chen, Yen-Kuang Kuo, Ya Hsuan Shih, Jinn Kong Sheu, Wei Chih Lai, Heng Liu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In blue InGaN light-emitting diodes (LEDs), the intuitive approaches to suppress Auger recombination by reducing carrier density, e.g., increasing the number of quantum wells (QWs) and thickening the width of wells, suffer from nonuniform carrier distribution and more severe spatial separation of electron and hole wave functions. To resolve this issue, LED structures with thick InGaN wells and polarization-matched AlGaInN barriers are proposed theoretically. Furthermore, the number of QWs is reduced for the purpose of mitigating the additional compressive strain in AlGaInN barriers. Simulation results reveal that, in the proposed structures, the quantum-confined Stark effect in strained wells is nearly eliminated through the utilization of polarization-matched barriers, which efficiently promotes internal quantum efficiency. Furthermore, the phenomenon of efficiency droop is also markedly improved because of the uniformly distributed or dispersed carriers, and accordingly the suppressed Auger recombination.

Original languageEnglish
Pages (from-to)3158-3161
Number of pages4
JournalOptics Letters
Volume38
Issue number16
DOIs
Publication statusPublished - 2013 Aug 23

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this