Numerical study of the effects of hetero-interfaces, polarization charges, and step-graded interlayers on the photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell

Yen Kuang Kuo; Jih Yuan Chang; Ya Hsuan Shih

doi:10.1109/JQE.2011.2181972

Numerical study of the effects of hetero-interfaces, polarization charges, and step-graded interlayers on the photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell

Yen Kuang Kuo, Jih Yuan Chang, Ya Hsuan Shih

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

The photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell are studied numerically. The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If these effects are not eliminated or diminished, the photovoltaic properties would not be good enough for practical applications even if a high-quality crystal could be obtained. For this purpose, the step-graded interlayers between the GaN-InGaN interfaces are introduced in order to overcome both aforementioned critical effects. The impacts of the thickness and p-type doping concentration of the step-graded interlayers are also investigated in detail.

Original language	English
Article number	6112707
Pages (from-to)	367-374
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	48
Issue number	3
DOIs	https://doi.org/10.1109/JQE.2011.2181972
Publication status	Published - 2012 Feb 15

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2011.2181972

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abstract = "The photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell are studied numerically. The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If these effects are not eliminated or diminished, the photovoltaic properties would not be good enough for practical applications even if a high-quality crystal could be obtained. For this purpose, the step-graded interlayers between the GaN-InGaN interfaces are introduced in order to overcome both aforementioned critical effects. The impacts of the thickness and p-type doping concentration of the step-graded interlayers are also investigated in detail.",

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