Abstract
The photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell are studied numerically. The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If these effects are not eliminated or diminished, the photovoltaic properties would not be good enough for practical applications even if a high-quality crystal could be obtained. For this purpose, the step-graded interlayers between the GaN-InGaN interfaces are introduced in order to overcome both aforementioned critical effects. The impacts of the thickness and p-type doping concentration of the step-graded interlayers are also investigated in detail.
| Original language | English |
|---|---|
| Article number | 6112707 |
| Pages (from-to) | 367-374 |
| Number of pages | 8 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 48 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2012 Feb 15 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
}
Numerical study of the effects of hetero-interfaces, polarization charges, and step-graded interlayers on the photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell. / Kuo, Yen Kuang; Chang, Jih Yuan; Shih, Ya Hsuan.
In: IEEE Journal of Quantum Electronics, Vol. 48, No. 3, 6112707, 15.02.2012, p. 367-374.Research output: Contribution to journal › Article
TY - JOUR
T1 - Numerical study of the effects of hetero-interfaces, polarization charges, and step-graded interlayers on the photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell
AU - Kuo, Yen Kuang
AU - Chang, Jih Yuan
AU - Shih, Ya Hsuan
PY - 2012/2/15
Y1 - 2012/2/15
N2 - The photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell are studied numerically. The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If these effects are not eliminated or diminished, the photovoltaic properties would not be good enough for practical applications even if a high-quality crystal could be obtained. For this purpose, the step-graded interlayers between the GaN-InGaN interfaces are introduced in order to overcome both aforementioned critical effects. The impacts of the thickness and p-type doping concentration of the step-graded interlayers are also investigated in detail.
AB - The photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell are studied numerically. The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If these effects are not eliminated or diminished, the photovoltaic properties would not be good enough for practical applications even if a high-quality crystal could be obtained. For this purpose, the step-graded interlayers between the GaN-InGaN interfaces are introduced in order to overcome both aforementioned critical effects. The impacts of the thickness and p-type doping concentration of the step-graded interlayers are also investigated in detail.
UR - http://www.scopus.com/inward/record.url?scp=84856969736&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84856969736&partnerID=8YFLogxK
U2 - 10.1109/JQE.2011.2181972
DO - 10.1109/JQE.2011.2181972
M3 - Article
AN - SCOPUS:84856969736
VL - 48
SP - 367
EP - 374
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 3
M1 - 6112707
ER -