Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

J. R. Chen, S. C. Ling, H. M. Huang, P. Y. Su, Tsung-Shine Ko, T. C. Lu, H. C. Kuo, Yen-Kuang Kuo, S. C. Wang

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron-hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10-15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.

Original languageEnglish
Pages (from-to)145-153
Number of pages9
JournalApplied Physics B: Lasers and Optics
Volume95
Issue number1
DOIs
Publication statusPublished - 2009 Apr 1

Fingerprint

quantum well lasers
barrier layers
semiconductor lasers
optical properties
polarization
threshold currents
quantum wells
slopes
simulation
wave functions
aluminum

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Chen, J. R. ; Ling, S. C. ; Huang, H. M. ; Su, P. Y. ; Ko, Tsung-Shine ; Lu, T. C. ; Kuo, H. C. ; Kuo, Yen-Kuang ; Wang, S. C. / Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers. In: Applied Physics B: Lasers and Optics. 2009 ; Vol. 95, No. 1. pp. 145-153.
@article{7d70cfe4f3d24ac28c177cd3da52a953,
title = "Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers",
abstract = "The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron-hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10-15{\%}. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.",
author = "Chen, {J. R.} and Ling, {S. C.} and Huang, {H. M.} and Su, {P. Y.} and Tsung-Shine Ko and Lu, {T. C.} and Kuo, {H. C.} and Yen-Kuang Kuo and Wang, {S. C.}",
year = "2009",
month = "4",
day = "1",
doi = "10.1007/s00340-008-3331-9",
language = "English",
volume = "95",
pages = "145--153",
journal = "Applied Physics B: Lasers and Optics",
issn = "0946-2171",
publisher = "Springer Verlag",
number = "1",

}

Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers. / Chen, J. R.; Ling, S. C.; Huang, H. M.; Su, P. Y.; Ko, Tsung-Shine; Lu, T. C.; Kuo, H. C.; Kuo, Yen-Kuang; Wang, S. C.

In: Applied Physics B: Lasers and Optics, Vol. 95, No. 1, 01.04.2009, p. 145-153.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

AU - Chen, J. R.

AU - Ling, S. C.

AU - Huang, H. M.

AU - Su, P. Y.

AU - Ko, Tsung-Shine

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Kuo, Yen-Kuang

AU - Wang, S. C.

PY - 2009/4/1

Y1 - 2009/4/1

N2 - The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron-hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10-15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.

AB - The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron-hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10-15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.

UR - http://www.scopus.com/inward/record.url?scp=62949171537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62949171537&partnerID=8YFLogxK

U2 - 10.1007/s00340-008-3331-9

DO - 10.1007/s00340-008-3331-9

M3 - Article

AN - SCOPUS:62949171537

VL - 95

SP - 145

EP - 153

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

SN - 0946-2171

IS - 1

ER -