Abstract
This letter demonstrates the outcomes of numerical investigation of the InGaN light-emitting diodes with varied barrier thicknesses. Compared with the original structure with equal barrier thickness, the analyses focus on hole injection efficiency, carrier distribution, electron leakage, and radiative recombination. Simulation approach yields to a result that, when varied barrier thicknesses are used, more than one quantum well contributes to radiative recombination at high injection current which leads to the improvement of efficiency droop. Further analysis indicates that the thinner barrier located close to the p-side layers is beneficial for increasing hole injection, which leads to the reduction of electron leakage; moreover, holes can be confined in more quantum wells in such condition as well.
Original language | English |
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Article number | 5621883 |
Pages (from-to) | 76-78 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 23 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2011 Jan 12 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering