Numerical study of blue InGaN light-emitting diodes with varied barrier thicknesses

Miao Chan Tsai, Sheng Horng Yen, Ying Chung Lu, Yen Kuang Kuo

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Abstract

This letter demonstrates the outcomes of numerical investigation of the InGaN light-emitting diodes with varied barrier thicknesses. Compared with the original structure with equal barrier thickness, the analyses focus on hole injection efficiency, carrier distribution, electron leakage, and radiative recombination. Simulation approach yields to a result that, when varied barrier thicknesses are used, more than one quantum well contributes to radiative recombination at high injection current which leads to the improvement of efficiency droop. Further analysis indicates that the thinner barrier located close to the p-side layers is beneficial for increasing hole injection, which leads to the reduction of electron leakage; moreover, holes can be confined in more quantum wells in such condition as well.

Original languageEnglish
Article number5621883
Pages (from-to)76-78
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number2
DOIs
Publication statusPublished - 2011 Jan 12

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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