Abstract
This letter demonstrates the outcomes of numerical investigation of the InGaN light-emitting diodes with varied barrier thicknesses. Compared with the original structure with equal barrier thickness, the analyses focus on hole injection efficiency, carrier distribution, electron leakage, and radiative recombination. Simulation approach yields to a result that, when varied barrier thicknesses are used, more than one quantum well contributes to radiative recombination at high injection current which leads to the improvement of efficiency droop. Further analysis indicates that the thinner barrier located close to the p-side layers is beneficial for increasing hole injection, which leads to the reduction of electron leakage; moreover, holes can be confined in more quantum wells in such condition as well.
| Original language | English |
|---|---|
| Article number | 5621883 |
| Pages (from-to) | 76-78 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 23 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2011 Jan 12 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
}
Numerical study of blue InGaN light-emitting diodes with varied barrier thicknesses. / Tsai, Miao Chan; Yen, Sheng Horng; Lu, Ying Chung; Kuo, Yen Kuang.
In: IEEE Photonics Technology Letters, Vol. 23, No. 2, 5621883, 12.01.2011, p. 76-78.Research output: Contribution to journal › Article
TY - JOUR
T1 - Numerical study of blue InGaN light-emitting diodes with varied barrier thicknesses
AU - Tsai, Miao Chan
AU - Yen, Sheng Horng
AU - Lu, Ying Chung
AU - Kuo, Yen Kuang
PY - 2011/1/12
Y1 - 2011/1/12
N2 - This letter demonstrates the outcomes of numerical investigation of the InGaN light-emitting diodes with varied barrier thicknesses. Compared with the original structure with equal barrier thickness, the analyses focus on hole injection efficiency, carrier distribution, electron leakage, and radiative recombination. Simulation approach yields to a result that, when varied barrier thicknesses are used, more than one quantum well contributes to radiative recombination at high injection current which leads to the improvement of efficiency droop. Further analysis indicates that the thinner barrier located close to the p-side layers is beneficial for increasing hole injection, which leads to the reduction of electron leakage; moreover, holes can be confined in more quantum wells in such condition as well.
AB - This letter demonstrates the outcomes of numerical investigation of the InGaN light-emitting diodes with varied barrier thicknesses. Compared with the original structure with equal barrier thickness, the analyses focus on hole injection efficiency, carrier distribution, electron leakage, and radiative recombination. Simulation approach yields to a result that, when varied barrier thicknesses are used, more than one quantum well contributes to radiative recombination at high injection current which leads to the improvement of efficiency droop. Further analysis indicates that the thinner barrier located close to the p-side layers is beneficial for increasing hole injection, which leads to the reduction of electron leakage; moreover, holes can be confined in more quantum wells in such condition as well.
UR - http://www.scopus.com/inward/record.url?scp=78650984519&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650984519&partnerID=8YFLogxK
U2 - 10.1109/LPT.2010.2091119
DO - 10.1109/LPT.2010.2091119
M3 - Article
AN - SCOPUS:78650984519
VL - 23
SP - 76
EP - 78
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 2
M1 - 5621883
ER -