Numerical study of (0001) Face GaN/InGaN p-i-n solar cell with compositional grading configuration

Yen Kuang Kuo, Bing Cheng Lin, Jih Yuan Chang, Fang Ming Chen, Hao Chung Kuo

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Abstract

The advantages of a (0001) face GaN/InGaN p-i-n solar cell with compositional grading configuration between i-InGaN/p-GaN layers are studied numerically. With the use of the grading layer, the conversion efficiency is markedly promoted due to the reduction of potential barrier height for holes and due to the decrease of polarization. Optimized conversion efficiency is obtained when the thickness of the grading layer increases to a critical value. This critical thickness is strongly influenced by the polarization charges and doping concentration of the grading layer. When the density of the polarization charges is high or the doping concentration is low, a thick grading layer is required to achieve high efficiency.

Original languageEnglish
Article number6177221
Pages (from-to)1039-1041
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number12
DOIs
Publication statusPublished - 2012 May 22

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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