Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers

Bo Ting Liou, Sheng Horng Yen, Ming Wei Yao, Mei Ling Chen, Yen-Kuang Kuo, Shu-Hsuan Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K∼350 K, 300 K∼330 K, and 330 K∼350 K, respectively.

Original languageEnglish
Title of host publicationOptoelectronic Devices
Subtitle of host publicationPhysics, Fabrication, and Application III
DOIs
Publication statusPublished - 2006 Dec 1
EventOptoelectronic Devices: Physics, Fabrication, and Application III - Boston, MA, United States
Duration: 2006 Oct 12006 Oct 2

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6368
ISSN (Print)0277-786X

Other

OtherOptoelectronic Devices: Physics, Fabrication, and Application III
CountryUnited States
CityBoston, MA
Period06-10-0106-10-02

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers'. Together they form a unique fingerprint.

  • Cite this

    Liou, B. T., Yen, S. H., Yao, M. W., Chen, M. L., Kuo, Y-K., & Chang, S-H. (2006). Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers. In Optoelectronic Devices: Physics, Fabrication, and Application III [636814] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6368). https://doi.org/10.1117/12.685959