Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers

Bo Ting Liou, Sheng Horng Yen, Ming Wei Yao, Mei Ling Chen, Yen-Kuang Kuo, Shu-Hsuan Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)


Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K∼350 K, 300 K∼330 K, and 330 K∼350 K, respectively.

Original languageEnglish
Title of host publicationOptoelectronic Devices
Subtitle of host publicationPhysics, Fabrication, and Application III
Publication statusPublished - 2006 Dec 1
EventOptoelectronic Devices: Physics, Fabrication, and Application III - Boston, MA, United States
Duration: 2006 Oct 12006 Oct 2

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOptoelectronic Devices: Physics, Fabrication, and Application III
CountryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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