Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers

Bo Ting Liou, Sheng Horng Yen, Ming Wei Yao, Mei Ling Chen, Yen-Kuang Kuo, Shu-Hsuan Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K∼350 K, 300 K∼330 K, and 330 K∼350 K, respectively.

Original languageEnglish
Title of host publicationOptoelectronic Devices
Subtitle of host publicationPhysics, Fabrication, and Application III
DOIs
Publication statusPublished - 2006 Dec 1
EventOptoelectronic Devices: Physics, Fabrication, and Application III - Boston, MA, United States
Duration: 2006 Oct 12006 Oct 2

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6368
ISSN (Print)0277-786X

Other

OtherOptoelectronic Devices: Physics, Fabrication, and Application III
CountryUnited States
CityBoston, MA
Period06-10-0106-10-02

Fingerprint

threshold currents
Semiconductor lasers
semiconductor lasers
Quantum well lasers
Electrons
quantum well lasers
operating temperature
electrons
Doping (additives)
Temperature
Lasers
lasers
temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Liou, B. T., Yen, S. H., Yao, M. W., Chen, M. L., Kuo, Y-K., & Chang, S-H. (2006). Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers. In Optoelectronic Devices: Physics, Fabrication, and Application III [636814] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6368). https://doi.org/10.1117/12.685959
Liou, Bo Ting ; Yen, Sheng Horng ; Yao, Ming Wei ; Chen, Mei Ling ; Kuo, Yen-Kuang ; Chang, Shu-Hsuan. / Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers. Optoelectronic Devices: Physics, Fabrication, and Application III. 2006. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2{\%} compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74{\%} at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K∼350 K, 300 K∼330 K, and 330 K∼350 K, respectively.",
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Liou, BT, Yen, SH, Yao, MW, Chen, ML, Kuo, Y-K & Chang, S-H 2006, Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers. in Optoelectronic Devices: Physics, Fabrication, and Application III., 636814, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, Boston, MA, United States, 06-10-01. https://doi.org/10.1117/12.685959

Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers. / Liou, Bo Ting; Yen, Sheng Horng; Yao, Ming Wei; Chen, Mei Ling; Kuo, Yen-Kuang; Chang, Shu-Hsuan.

Optoelectronic Devices: Physics, Fabrication, and Application III. 2006. 636814 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6368).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K∼350 K, 300 K∼330 K, and 330 K∼350 K, respectively.

AB - Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K∼350 K, 300 K∼330 K, and 330 K∼350 K, respectively.

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Liou BT, Yen SH, Yao MW, Chen ML, Kuo Y-K, Chang S-H. Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers. In Optoelectronic Devices: Physics, Fabrication, and Application III. 2006. 636814. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.685959