Numerical simulation on white OLEDs with dotted-line doped emitting layers

Shu-Hsuan Chang, Chien Yang Wen, Yi Hsiang Huang, Yen-Kuang Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

White organic light-emitting diodes (OLEDs) have attracted great attention recently. In this study, high-efficiency white organic light-emitting diodes with dotted-line doped layers are numerically investigated with the APSYS (abbreviation of Advanced Physical Model of Simulation Devices) simulation program. The APSYS simulation program, developed by Crosslight Inc., is capable of dealing with the optical, electrical, and thermal characteristics of OLED devices. To approach the real situation, the OLED device fabricated by Park et al. (Current Applied Physics 1, 116, 2001) was first modeled by adjusting the appropriate physical parameters. Based on this OLED structure, a new structure of ITO/α-NPD (40 nm)/Alq3:DCJTB (30 nm)/Alq3 (30 nm)/Mg: Ag emitting quasi-white light was then proposed. Then, the single layer of Alq3:DCJTB was replaced by multi-(Alq3:DCJTB/Alq 3)n layers, which are the so-called dotted-line doped layers (see, e.g., paper by Han et al., Solid State Communications 141, 332, 2007), to further improve the optical performance. The optical properties of the white OLEDs with different pairs of (Alq3:DCJTB/Alq3)n dotted-line doped layers are investigated and discussed in detail. Optimization of the proposed quasi-white OLED structures is attempted. The simulation results indicate that the OLED with dotted-line doped layers has higher radiative recombination rate and better emission efficiency than that with a single Alq3:DCJTB layer. The physical origin of the improved optical performance for the OLED with dotted-line doped layers could be due to the increased electrons and holes at the interfaces between the Alq 3:DCJTB and Alq3 layers, which thus results in higher radiative recombination rate and better emission efficiency.

Original languageEnglish
Title of host publicationOrganic Photonic Materials and Devices XI
Volume7213
DOIs
Publication statusPublished - 2009 Jun 29
EventOrganic Photonic Materials and Devices XI - San Jose, CA, United States
Duration: 2009 Jan 272009 Jan 29

Other

OtherOrganic Photonic Materials and Devices XI
CountryUnited States
CitySan Jose, CA
Period09-01-2709-01-29

Fingerprint

Organic Light-emitting Diodes
Organic light emitting diodes (OLED)
light emitting diodes
Numerical Simulation
Line
Computer simulation
simulation
radiative recombination
Recombination
Abbreviation
Device Simulation
abbreviations
Simulation
ITO (semiconductors)
Physical Model
Optical Properties
High Efficiency
Physics
Optical properties
adjusting

All Science Journal Classification (ASJC) codes

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Chang, S-H., Wen, C. Y., Huang, Y. H., & Kuo, Y-K. (2009). Numerical simulation on white OLEDs with dotted-line doped emitting layers. In Organic Photonic Materials and Devices XI (Vol. 7213). [72131J] https://doi.org/10.1117/12.808895
Chang, Shu-Hsuan ; Wen, Chien Yang ; Huang, Yi Hsiang ; Kuo, Yen-Kuang. / Numerical simulation on white OLEDs with dotted-line doped emitting layers. Organic Photonic Materials and Devices XI. Vol. 7213 2009.
@inproceedings{2fca2e6e00804d50b017d7e7482284e6,
title = "Numerical simulation on white OLEDs with dotted-line doped emitting layers",
abstract = "White organic light-emitting diodes (OLEDs) have attracted great attention recently. In this study, high-efficiency white organic light-emitting diodes with dotted-line doped layers are numerically investigated with the APSYS (abbreviation of Advanced Physical Model of Simulation Devices) simulation program. The APSYS simulation program, developed by Crosslight Inc., is capable of dealing with the optical, electrical, and thermal characteristics of OLED devices. To approach the real situation, the OLED device fabricated by Park et al. (Current Applied Physics 1, 116, 2001) was first modeled by adjusting the appropriate physical parameters. Based on this OLED structure, a new structure of ITO/α-NPD (40 nm)/Alq3:DCJTB (30 nm)/Alq3 (30 nm)/Mg: Ag emitting quasi-white light was then proposed. Then, the single layer of Alq3:DCJTB was replaced by multi-(Alq3:DCJTB/Alq 3)n layers, which are the so-called dotted-line doped layers (see, e.g., paper by Han et al., Solid State Communications 141, 332, 2007), to further improve the optical performance. The optical properties of the white OLEDs with different pairs of (Alq3:DCJTB/Alq3)n dotted-line doped layers are investigated and discussed in detail. Optimization of the proposed quasi-white OLED structures is attempted. The simulation results indicate that the OLED with dotted-line doped layers has higher radiative recombination rate and better emission efficiency than that with a single Alq3:DCJTB layer. The physical origin of the improved optical performance for the OLED with dotted-line doped layers could be due to the increased electrons and holes at the interfaces between the Alq 3:DCJTB and Alq3 layers, which thus results in higher radiative recombination rate and better emission efficiency.",
author = "Shu-Hsuan Chang and Wen, {Chien Yang} and Huang, {Yi Hsiang} and Yen-Kuang Kuo",
year = "2009",
month = "6",
day = "29",
doi = "10.1117/12.808895",
language = "English",
isbn = "9780819474599",
volume = "7213",
booktitle = "Organic Photonic Materials and Devices XI",

}

Chang, S-H, Wen, CY, Huang, YH & Kuo, Y-K 2009, Numerical simulation on white OLEDs with dotted-line doped emitting layers. in Organic Photonic Materials and Devices XI. vol. 7213, 72131J, Organic Photonic Materials and Devices XI, San Jose, CA, United States, 09-01-27. https://doi.org/10.1117/12.808895

Numerical simulation on white OLEDs with dotted-line doped emitting layers. / Chang, Shu-Hsuan; Wen, Chien Yang; Huang, Yi Hsiang; Kuo, Yen-Kuang.

Organic Photonic Materials and Devices XI. Vol. 7213 2009. 72131J.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Numerical simulation on white OLEDs with dotted-line doped emitting layers

AU - Chang, Shu-Hsuan

AU - Wen, Chien Yang

AU - Huang, Yi Hsiang

AU - Kuo, Yen-Kuang

PY - 2009/6/29

Y1 - 2009/6/29

N2 - White organic light-emitting diodes (OLEDs) have attracted great attention recently. In this study, high-efficiency white organic light-emitting diodes with dotted-line doped layers are numerically investigated with the APSYS (abbreviation of Advanced Physical Model of Simulation Devices) simulation program. The APSYS simulation program, developed by Crosslight Inc., is capable of dealing with the optical, electrical, and thermal characteristics of OLED devices. To approach the real situation, the OLED device fabricated by Park et al. (Current Applied Physics 1, 116, 2001) was first modeled by adjusting the appropriate physical parameters. Based on this OLED structure, a new structure of ITO/α-NPD (40 nm)/Alq3:DCJTB (30 nm)/Alq3 (30 nm)/Mg: Ag emitting quasi-white light was then proposed. Then, the single layer of Alq3:DCJTB was replaced by multi-(Alq3:DCJTB/Alq 3)n layers, which are the so-called dotted-line doped layers (see, e.g., paper by Han et al., Solid State Communications 141, 332, 2007), to further improve the optical performance. The optical properties of the white OLEDs with different pairs of (Alq3:DCJTB/Alq3)n dotted-line doped layers are investigated and discussed in detail. Optimization of the proposed quasi-white OLED structures is attempted. The simulation results indicate that the OLED with dotted-line doped layers has higher radiative recombination rate and better emission efficiency than that with a single Alq3:DCJTB layer. The physical origin of the improved optical performance for the OLED with dotted-line doped layers could be due to the increased electrons and holes at the interfaces between the Alq 3:DCJTB and Alq3 layers, which thus results in higher radiative recombination rate and better emission efficiency.

AB - White organic light-emitting diodes (OLEDs) have attracted great attention recently. In this study, high-efficiency white organic light-emitting diodes with dotted-line doped layers are numerically investigated with the APSYS (abbreviation of Advanced Physical Model of Simulation Devices) simulation program. The APSYS simulation program, developed by Crosslight Inc., is capable of dealing with the optical, electrical, and thermal characteristics of OLED devices. To approach the real situation, the OLED device fabricated by Park et al. (Current Applied Physics 1, 116, 2001) was first modeled by adjusting the appropriate physical parameters. Based on this OLED structure, a new structure of ITO/α-NPD (40 nm)/Alq3:DCJTB (30 nm)/Alq3 (30 nm)/Mg: Ag emitting quasi-white light was then proposed. Then, the single layer of Alq3:DCJTB was replaced by multi-(Alq3:DCJTB/Alq 3)n layers, which are the so-called dotted-line doped layers (see, e.g., paper by Han et al., Solid State Communications 141, 332, 2007), to further improve the optical performance. The optical properties of the white OLEDs with different pairs of (Alq3:DCJTB/Alq3)n dotted-line doped layers are investigated and discussed in detail. Optimization of the proposed quasi-white OLED structures is attempted. The simulation results indicate that the OLED with dotted-line doped layers has higher radiative recombination rate and better emission efficiency than that with a single Alq3:DCJTB layer. The physical origin of the improved optical performance for the OLED with dotted-line doped layers could be due to the increased electrons and holes at the interfaces between the Alq 3:DCJTB and Alq3 layers, which thus results in higher radiative recombination rate and better emission efficiency.

UR - http://www.scopus.com/inward/record.url?scp=67649208084&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649208084&partnerID=8YFLogxK

U2 - 10.1117/12.808895

DO - 10.1117/12.808895

M3 - Conference contribution

AN - SCOPUS:67649208084

SN - 9780819474599

VL - 7213

BT - Organic Photonic Materials and Devices XI

ER -

Chang S-H, Wen CY, Huang YH, Kuo Y-K. Numerical simulation on white OLEDs with dotted-line doped emitting layers. In Organic Photonic Materials and Devices XI. Vol. 7213. 2009. 72131J https://doi.org/10.1117/12.808895