Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells

Shu Hsuan Chang, Miao Chan Tsai, Sheng Horng Yen, Shu Jeng Chang, Yen Kuang Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, the high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells are investigated numerically by using the APSYS simulation program. The solar cell structure used as a reference was based on a published article by Geisz et al. (Appl. Phys. Lett. 91, 023502, 2007). By optimizing the layer thickness of the top and middle cells, the appropriate solar cell structure which possesses high sunlight-to-energy conversion efficiency is recommended. At AM1.5G and one sun, the conversion efficiency is improved by 2.3%. At AM0 and one sun, the conversion efficiency is improved by 4.2%. At AM1.5D and one sun, the conversion efficiency is improved by 1.3%. Furthermore, based on the optimized structures, this device can achieve efficiencies of more than 40% at high concentrations. For the triple-junction solar cell under AM1.5G solar spectrum, the conversion efficiency reaches 40.2% at 40 suns. For the device under AM0 solar spectrum, the conversion efficiency reaches 36.2% at 30 suns. For the device under AM1.5D solar spectrum, the conversion efficiency reaches 40.2% at 50 suns.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XVIII
DOIs
Publication statusPublished - 2010 Jun 15
EventPhysics and Simulation of Optoelectronic Devices XVIII - San Francisco, CA, United States
Duration: 2010 Jan 252010 Jan 28

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7597
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XVIII
CountryUnited States
CitySan Francisco, CA
Period10-01-2510-01-28

Fingerprint

InGaAs
Solar Cells
Gallium Arsenide
Conversion efficiency
High Efficiency
Solar cells
solar cells
Numerical Simulation
Computer simulation
solar spectra
Sun
simulation
sun
gallium arsenide
energy conversion efficiency
Energy conversion
sunlight
Cell
Energy
cells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Chang, S. H., Tsai, M. C., Yen, S. H., Chang, S. J., & Kuo, Y. K. (2010). Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells. In Physics and Simulation of Optoelectronic Devices XVIII [759721] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7597). https://doi.org/10.1117/12.841270
Chang, Shu Hsuan ; Tsai, Miao Chan ; Yen, Sheng Horng ; Chang, Shu Jeng ; Kuo, Yen Kuang. / Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells. Physics and Simulation of Optoelectronic Devices XVIII. 2010. (Proceedings of SPIE - The International Society for Optical Engineering).
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title = "Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells",
abstract = "In this paper, the high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells are investigated numerically by using the APSYS simulation program. The solar cell structure used as a reference was based on a published article by Geisz et al. (Appl. Phys. Lett. 91, 023502, 2007). By optimizing the layer thickness of the top and middle cells, the appropriate solar cell structure which possesses high sunlight-to-energy conversion efficiency is recommended. At AM1.5G and one sun, the conversion efficiency is improved by 2.3{\%}. At AM0 and one sun, the conversion efficiency is improved by 4.2{\%}. At AM1.5D and one sun, the conversion efficiency is improved by 1.3{\%}. Furthermore, based on the optimized structures, this device can achieve efficiencies of more than 40{\%} at high concentrations. For the triple-junction solar cell under AM1.5G solar spectrum, the conversion efficiency reaches 40.2{\%} at 40 suns. For the device under AM0 solar spectrum, the conversion efficiency reaches 36.2{\%} at 30 suns. For the device under AM1.5D solar spectrum, the conversion efficiency reaches 40.2{\%} at 50 suns.",
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Chang, SH, Tsai, MC, Yen, SH, Chang, SJ & Kuo, YK 2010, Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells. in Physics and Simulation of Optoelectronic Devices XVIII., 759721, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7597, Physics and Simulation of Optoelectronic Devices XVIII, San Francisco, CA, United States, 10-01-25. https://doi.org/10.1117/12.841270

Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells. / Chang, Shu Hsuan; Tsai, Miao Chan; Yen, Sheng Horng; Chang, Shu Jeng; Kuo, Yen Kuang.

Physics and Simulation of Optoelectronic Devices XVIII. 2010. 759721 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7597).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - In this paper, the high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells are investigated numerically by using the APSYS simulation program. The solar cell structure used as a reference was based on a published article by Geisz et al. (Appl. Phys. Lett. 91, 023502, 2007). By optimizing the layer thickness of the top and middle cells, the appropriate solar cell structure which possesses high sunlight-to-energy conversion efficiency is recommended. At AM1.5G and one sun, the conversion efficiency is improved by 2.3%. At AM0 and one sun, the conversion efficiency is improved by 4.2%. At AM1.5D and one sun, the conversion efficiency is improved by 1.3%. Furthermore, based on the optimized structures, this device can achieve efficiencies of more than 40% at high concentrations. For the triple-junction solar cell under AM1.5G solar spectrum, the conversion efficiency reaches 40.2% at 40 suns. For the device under AM0 solar spectrum, the conversion efficiency reaches 36.2% at 30 suns. For the device under AM1.5D solar spectrum, the conversion efficiency reaches 40.2% at 50 suns.

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Physics and Simulation of Optoelectronic Devices XVIII

ER -

Chang SH, Tsai MC, Yen SH, Chang SJ, Kuo YK. Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells. In Physics and Simulation of Optoelectronic Devices XVIII. 2010. 759721. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.841270