Abstract
A compositional grading layer between the p-In0.5Ga 0.5P emitter layer and p-In0.5Al0.5P window layer in the p +-n In0.5Ga0.5P solar cell is investigated numerically. With the insertion of the grading layer, the short-circuit current density and conversion efficiency are improved due to the enhancement of carrier-collection efficiency, which can be ascribed to the reduction of potential barrier height in the valance band and the existence of internal quasi-electric field in the conduction band. An optimized value of conversion efficiency can be obtained by appropriately adjusting the thickness of the grading layer.
| Original language | English |
|---|---|
| Article number | 5744095 |
| Pages (from-to) | 822-824 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 23 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2011 Jun 3 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Numerical simulation of single-junction In0.5Ga0.5P solar cell with compositional grading configuration. / Kuo, Yen Kuang; Lin, Bing Cheng; Chang, Jih Yuan; Chang, Yi An.
In: IEEE Photonics Technology Letters, Vol. 23, No. 12, 5744095, 03.06.2011, p. 822-824.Research output: Contribution to journal › Article
TY - JOUR
T1 - Numerical simulation of single-junction In0.5Ga0.5P solar cell with compositional grading configuration
AU - Kuo, Yen Kuang
AU - Lin, Bing Cheng
AU - Chang, Jih Yuan
AU - Chang, Yi An
PY - 2011/6/3
Y1 - 2011/6/3
N2 - A compositional grading layer between the p-In0.5Ga 0.5P emitter layer and p-In0.5Al0.5P window layer in the p +-n In0.5Ga0.5P solar cell is investigated numerically. With the insertion of the grading layer, the short-circuit current density and conversion efficiency are improved due to the enhancement of carrier-collection efficiency, which can be ascribed to the reduction of potential barrier height in the valance band and the existence of internal quasi-electric field in the conduction band. An optimized value of conversion efficiency can be obtained by appropriately adjusting the thickness of the grading layer.
AB - A compositional grading layer between the p-In0.5Ga 0.5P emitter layer and p-In0.5Al0.5P window layer in the p +-n In0.5Ga0.5P solar cell is investigated numerically. With the insertion of the grading layer, the short-circuit current density and conversion efficiency are improved due to the enhancement of carrier-collection efficiency, which can be ascribed to the reduction of potential barrier height in the valance band and the existence of internal quasi-electric field in the conduction band. An optimized value of conversion efficiency can be obtained by appropriately adjusting the thickness of the grading layer.
UR - http://www.scopus.com/inward/record.url?scp=79957761883&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79957761883&partnerID=8YFLogxK
U2 - 10.1109/LPT.2011.2140100
DO - 10.1109/LPT.2011.2140100
M3 - Article
AN - SCOPUS:79957761883
VL - 23
SP - 822
EP - 824
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 12
M1 - 5744095
ER -