Abstract
A compositional grading layer between the p-In0.5Ga 0.5P emitter layer and p-In0.5Al0.5P window layer in the p +-n In0.5Ga0.5P solar cell is investigated numerically. With the insertion of the grading layer, the short-circuit current density and conversion efficiency are improved due to the enhancement of carrier-collection efficiency, which can be ascribed to the reduction of potential barrier height in the valance band and the existence of internal quasi-electric field in the conduction band. An optimized value of conversion efficiency can be obtained by appropriately adjusting the thickness of the grading layer.
| Original language | English |
|---|---|
| Article number | 5744095 |
| Pages (from-to) | 822-824 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 23 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2011 Jun 3 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Kuo, Y. K., Lin, B. C., Chang, J. Y., & Chang, Y. A. (2011). Numerical simulation of single-junction In0.5Ga0.5P solar cell with compositional grading configuration. IEEE Photonics Technology Letters, 23(12), 822-824. [5744095]. https://doi.org/10.1109/LPT.2011.2140100