Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

Yen-Kuang Kuo, Miao Chan Tsai, Sheng Horng Yen

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

The effect of polarization-matched AlGaInN electron-blocking layer and barrier layer on the optical performance of blue InGaN light-emitting diodes is numerically investigated. The polarization-matched AlGaInN electron-blocking layer and barrier layer are employed in an attempt to reduce the polarization effect inside the active region of the light-emitting diodes. The simulation results show that the polarization-matched AlGaInN electron-blocking layer is beneficial for confining the electrons inside the quantum well region. With the use of both polarization-matched AlGaInN electron-blocking layer and barrier layer, the optical performance of blue InGaN light-emitting diodes is greatly improved due to the increased overlap of electron and hole wavefunctions. The method proposed in this paper can also be applied to the light-emitting diodes operating in other spectral range.

Original languageEnglish
Pages (from-to)4252-4255
Number of pages4
JournalOptics Communications
Volume282
Issue number21
DOIs
Publication statusPublished - 2009 Nov 1

Fingerprint

barrier layers
Light emitting diodes
light emitting diodes
Polarization
Electrons
Computer simulation
polarization
electrons
simulation
Wave functions
Semiconductor quantum wells
confining
quantum wells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer",
abstract = "The effect of polarization-matched AlGaInN electron-blocking layer and barrier layer on the optical performance of blue InGaN light-emitting diodes is numerically investigated. The polarization-matched AlGaInN electron-blocking layer and barrier layer are employed in an attempt to reduce the polarization effect inside the active region of the light-emitting diodes. The simulation results show that the polarization-matched AlGaInN electron-blocking layer is beneficial for confining the electrons inside the quantum well region. With the use of both polarization-matched AlGaInN electron-blocking layer and barrier layer, the optical performance of blue InGaN light-emitting diodes is greatly improved due to the increased overlap of electron and hole wavefunctions. The method proposed in this paper can also be applied to the light-emitting diodes operating in other spectral range.",
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Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer. / Kuo, Yen-Kuang; Tsai, Miao Chan; Yen, Sheng Horng.

In: Optics Communications, Vol. 282, No. 21, 01.11.2009, p. 4252-4255.

Research output: Contribution to journalArticle

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