Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

Yen-Kuang Kuo, Miao Chan Tsai, Sheng Horng Yen

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67 Citations (Scopus)

Abstract

The effect of polarization-matched AlGaInN electron-blocking layer and barrier layer on the optical performance of blue InGaN light-emitting diodes is numerically investigated. The polarization-matched AlGaInN electron-blocking layer and barrier layer are employed in an attempt to reduce the polarization effect inside the active region of the light-emitting diodes. The simulation results show that the polarization-matched AlGaInN electron-blocking layer is beneficial for confining the electrons inside the quantum well region. With the use of both polarization-matched AlGaInN electron-blocking layer and barrier layer, the optical performance of blue InGaN light-emitting diodes is greatly improved due to the increased overlap of electron and hole wavefunctions. The method proposed in this paper can also be applied to the light-emitting diodes operating in other spectral range.

Original languageEnglish
Pages (from-to)4252-4255
Number of pages4
JournalOptics Communications
Volume282
Issue number21
DOIs
Publication statusPublished - 2009 Nov 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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