Numerical simulation of AIInGaN ultraviolet light-emitting diodes

Yen Kuang Kuo, Sheng Horng Yen, Jun Rong Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

In reference to an AlInGaN UV LED fabricated in laboratory, the optical properties of the 370-nm UV LEDs are investigated with a self-consistent APSYS simulation program. The optical performance of the UV LEDs with different aluminum compositions in AlGaN electron blocking layer and different numbers of quantum wells are investigated in an attempt to optimize the UV LED structure. The simulated results show that the electron leakage current can be effectively reduced with the use of an AlGaN electron blocking layer with an aluminum composition of greater than 0.19, and optimum performance may be obtained when the number of quantum wells is three. Since the built-in polarization is one of the most important factors for the deterioration of III-nitride LED performance, the feasibility of using a lattice-matched quaternary Al0.18In 0.039Ga0.781N electron blocking layer in the UV LED to improve the LED performance is also numerically studied. The simulated results suggest that with the use of a lattice-matched Al0.18gIn 0.039Ga0.781N electron blocking layer, the polarization charge density in each heterostructure interface is reduced, the electrostatic field in quantum wells is reduced, and the maximum output power is sufficiently improved. The simulated results also indicate that better LED performance may be obtained when the Al0.18In0.039Ga0.781N electron blocking layer has a higher p-doping concentration due to reduced electron leakage and increased hole concentration in active region.

Original languageEnglish
Title of host publicationOptoelectronic Devices
Subtitle of host publicationPhysics, Fabrication, and Application III
DOIs
Publication statusPublished - 2006 Dec 1
EventOptoelectronic Devices: Physics, Fabrication, and Application III - Boston, MA, United States
Duration: 2006 Oct 12006 Oct 2

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6368
ISSN (Print)0277-786X

Other

OtherOptoelectronic Devices: Physics, Fabrication, and Application III
CountryUnited States
CityBoston, MA
Period06-10-0106-10-02

Fingerprint

Diode
Ultraviolet
ultraviolet radiation
Light emitting diodes
light emitting diodes
Electron
Numerical Simulation
Computer simulation
Electrons
Quantum Well
simulation
AlGaN
electrons
Semiconductor quantum wells
quantum wells
Aluminum
Polarization
leakage
Electrostatic Field
Leakage Current

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kuo, Y. K., Yen, S. H., & Chen, J. R. (2006). Numerical simulation of AIInGaN ultraviolet light-emitting diodes. In Optoelectronic Devices: Physics, Fabrication, and Application III [636812] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6368). https://doi.org/10.1117/12.685897
Kuo, Yen Kuang ; Yen, Sheng Horng ; Chen, Jun Rong. / Numerical simulation of AIInGaN ultraviolet light-emitting diodes. Optoelectronic Devices: Physics, Fabrication, and Application III. 2006. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "In reference to an AlInGaN UV LED fabricated in laboratory, the optical properties of the 370-nm UV LEDs are investigated with a self-consistent APSYS simulation program. The optical performance of the UV LEDs with different aluminum compositions in AlGaN electron blocking layer and different numbers of quantum wells are investigated in an attempt to optimize the UV LED structure. The simulated results show that the electron leakage current can be effectively reduced with the use of an AlGaN electron blocking layer with an aluminum composition of greater than 0.19, and optimum performance may be obtained when the number of quantum wells is three. Since the built-in polarization is one of the most important factors for the deterioration of III-nitride LED performance, the feasibility of using a lattice-matched quaternary Al0.18In 0.039Ga0.781N electron blocking layer in the UV LED to improve the LED performance is also numerically studied. The simulated results suggest that with the use of a lattice-matched Al0.18gIn 0.039Ga0.781N electron blocking layer, the polarization charge density in each heterostructure interface is reduced, the electrostatic field in quantum wells is reduced, and the maximum output power is sufficiently improved. The simulated results also indicate that better LED performance may be obtained when the Al0.18In0.039Ga0.781N electron blocking layer has a higher p-doping concentration due to reduced electron leakage and increased hole concentration in active region.",
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Kuo, YK, Yen, SH & Chen, JR 2006, Numerical simulation of AIInGaN ultraviolet light-emitting diodes. in Optoelectronic Devices: Physics, Fabrication, and Application III., 636812, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, Boston, MA, United States, 06-10-01. https://doi.org/10.1117/12.685897

Numerical simulation of AIInGaN ultraviolet light-emitting diodes. / Kuo, Yen Kuang; Yen, Sheng Horng; Chen, Jun Rong.

Optoelectronic Devices: Physics, Fabrication, and Application III. 2006. 636812 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6368).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - In reference to an AlInGaN UV LED fabricated in laboratory, the optical properties of the 370-nm UV LEDs are investigated with a self-consistent APSYS simulation program. The optical performance of the UV LEDs with different aluminum compositions in AlGaN electron blocking layer and different numbers of quantum wells are investigated in an attempt to optimize the UV LED structure. The simulated results show that the electron leakage current can be effectively reduced with the use of an AlGaN electron blocking layer with an aluminum composition of greater than 0.19, and optimum performance may be obtained when the number of quantum wells is three. Since the built-in polarization is one of the most important factors for the deterioration of III-nitride LED performance, the feasibility of using a lattice-matched quaternary Al0.18In 0.039Ga0.781N electron blocking layer in the UV LED to improve the LED performance is also numerically studied. The simulated results suggest that with the use of a lattice-matched Al0.18gIn 0.039Ga0.781N electron blocking layer, the polarization charge density in each heterostructure interface is reduced, the electrostatic field in quantum wells is reduced, and the maximum output power is sufficiently improved. The simulated results also indicate that better LED performance may be obtained when the Al0.18In0.039Ga0.781N electron blocking layer has a higher p-doping concentration due to reduced electron leakage and increased hole concentration in active region.

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Kuo YK, Yen SH, Chen JR. Numerical simulation of AIInGaN ultraviolet light-emitting diodes. In Optoelectronic Devices: Physics, Fabrication, and Application III. 2006. 636812. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.685897