Numerical investigation on the structural characteristics of GaN/InGaN solar cells

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In traditional III-nitride solar cells, the polarization-induced charges and potential barrier in the hetero-interfaces are demonstrated to be harmful for carrier collection. To solve these challenges, the elimination or mitigation of the abrupt hetero-interfaces should be efficient. In this study, various kinds of solar cell structures are investigated numerically. The structures under various situations of indium composition and degree of polarization are systematically explored. Specifically, the photovoltaic performance, energy band diagrams, electrostatic fields, and recombination rates are analyzed. Then, according to the simulation results, the appropriate solar cell structure which possesses high conversion efficiency is proposed.

Original languageEnglish
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices II
DOIs
Publication statusPublished - 2013 Jun 10
Event2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States
Duration: 2013 Feb 32013 Feb 7

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8620
ISSN (Print)0277-786X

Other

Other2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
CountryUnited States
CitySan Francisco, CA
Period13-02-0313-02-07

Fingerprint

InGaN
Solar Cells
Numerical Investigation
Solar cells
solar cells
Polarization
Electrostatic Field
Indium
Nitrides
polarization
Recombination
Band structure
Conversion efficiency
nitrides
energy bands
indium
Elimination
elimination
Diagram
diagrams

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kuo, Y-K., Chang, J-Y., & Yen, S. H. (2013). Numerical investigation on the structural characteristics of GaN/InGaN solar cells. In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II [862021] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8620). https://doi.org/10.1117/12.2003716
Kuo, Yen-Kuang ; Chang, Jih-Yuan ; Yen, Shih Hsun. / Numerical investigation on the structural characteristics of GaN/InGaN solar cells. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. 2013. (Proceedings of SPIE - The International Society for Optical Engineering).
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Kuo, Y-K, Chang, J-Y & Yen, SH 2013, Numerical investigation on the structural characteristics of GaN/InGaN solar cells. in Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II., 862021, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8620, 2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, San Francisco, CA, United States, 13-02-03. https://doi.org/10.1117/12.2003716

Numerical investigation on the structural characteristics of GaN/InGaN solar cells. / Kuo, Yen-Kuang; Chang, Jih-Yuan; Yen, Shih Hsun.

Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. 2013. 862021 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8620).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Kuo Y-K, Chang J-Y, Yen SH. Numerical investigation on the structural characteristics of GaN/InGaN solar cells. In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. 2013. 862021. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2003716