Numerical investigation on the structural characteristics of GaN/InGaN solar cells

Yen-Kuang Kuo; Jih-Yuan Chang; Shih Hsun Yen

doi:10.1117/12.2003716

Numerical investigation on the structural characteristics of GaN/InGaN solar cells

Yen-Kuang Kuo, Jih-Yuan Chang, Shih Hsun Yen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In traditional III-nitride solar cells, the polarization-induced charges and potential barrier in the hetero-interfaces are demonstrated to be harmful for carrier collection. To solve these challenges, the elimination or mitigation of the abrupt hetero-interfaces should be efficient. In this study, various kinds of solar cell structures are investigated numerically. The structures under various situations of indium composition and degree of polarization are systematically explored. Specifically, the photovoltaic performance, energy band diagrams, electrostatic fields, and recombination rates are analyzed. Then, according to the simulation results, the appropriate solar cell structure which possesses high conversion efficiency is proposed.

Original language	English
Title of host publication	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
DOIs	https://doi.org/10.1117/12.2003716
Publication status	Published - 2013 Jun 10
Event	2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States Duration: 2013 Feb 3 → 2013 Feb 7

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8620
ISSN (Print)	0277-786X

Other

Other	2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Country	United States
City	San Francisco, CA
Period	13-02-03 → 13-02-07

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.2003716

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@inproceedings{9037be2f1acc4b2cacea6ffd71064c2b,

title = "Numerical investigation on the structural characteristics of GaN/InGaN solar cells",

abstract = "In traditional III-nitride solar cells, the polarization-induced charges and potential barrier in the hetero-interfaces are demonstrated to be harmful for carrier collection. To solve these challenges, the elimination or mitigation of the abrupt hetero-interfaces should be efficient. In this study, various kinds of solar cell structures are investigated numerically. The structures under various situations of indium composition and degree of polarization are systematically explored. Specifically, the photovoltaic performance, energy band diagrams, electrostatic fields, and recombination rates are analyzed. Then, according to the simulation results, the appropriate solar cell structure which possesses high conversion efficiency is proposed.",

author = "Yen-Kuang Kuo and Jih-Yuan Chang and Yen, {Shih Hsun}",

year = "2013",

month = jun,

day = "10",

doi = "10.1117/12.2003716",

language = "English",

isbn = "9780819493897",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II",

note = "2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices ; Conference date: 03-02-2013 Through 07-02-2013",

}

Kuo, Y-K , Chang, J-Y & Yen, SH 2013, Numerical investigation on the structural characteristics of GaN/InGaN solar cells. in Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II., 862021, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8620, 2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, San Francisco, CA, United States, 13-02-03. https://doi.org/10.1117/12.2003716

Numerical investigation on the structural characteristics of GaN/InGaN solar cells. / Kuo, Yen-Kuang ; Chang, Jih-Yuan; Yen, Shih Hsun.

Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II. 2013. 862021 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8620).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Numerical investigation on the structural characteristics of GaN/InGaN solar cells

AU - Kuo, Yen-Kuang

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AU - Yen, Shih Hsun

PY - 2013/6/10

Y1 - 2013/6/10

N2 - In traditional III-nitride solar cells, the polarization-induced charges and potential barrier in the hetero-interfaces are demonstrated to be harmful for carrier collection. To solve these challenges, the elimination or mitigation of the abrupt hetero-interfaces should be efficient. In this study, various kinds of solar cell structures are investigated numerically. The structures under various situations of indium composition and degree of polarization are systematically explored. Specifically, the photovoltaic performance, energy band diagrams, electrostatic fields, and recombination rates are analyzed. Then, according to the simulation results, the appropriate solar cell structure which possesses high conversion efficiency is proposed.

AB - In traditional III-nitride solar cells, the polarization-induced charges and potential barrier in the hetero-interfaces are demonstrated to be harmful for carrier collection. To solve these challenges, the elimination or mitigation of the abrupt hetero-interfaces should be efficient. In this study, various kinds of solar cell structures are investigated numerically. The structures under various situations of indium composition and degree of polarization are systematically explored. Specifically, the photovoltaic performance, energy band diagrams, electrostatic fields, and recombination rates are analyzed. Then, according to the simulation results, the appropriate solar cell structure which possesses high conversion efficiency is proposed.

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