TY - GEN
T1 - Numerical investigation on the structural characteristics of GaN/InGaN solar cells
AU - Kuo, Yen-Kuang
AU - Chang, Jih-Yuan
AU - Yen, Shih Hsun
PY - 2013/6/10
Y1 - 2013/6/10
N2 - In traditional III-nitride solar cells, the polarization-induced charges and potential barrier in the hetero-interfaces are demonstrated to be harmful for carrier collection. To solve these challenges, the elimination or mitigation of the abrupt hetero-interfaces should be efficient. In this study, various kinds of solar cell structures are investigated numerically. The structures under various situations of indium composition and degree of polarization are systematically explored. Specifically, the photovoltaic performance, energy band diagrams, electrostatic fields, and recombination rates are analyzed. Then, according to the simulation results, the appropriate solar cell structure which possesses high conversion efficiency is proposed.
AB - In traditional III-nitride solar cells, the polarization-induced charges and potential barrier in the hetero-interfaces are demonstrated to be harmful for carrier collection. To solve these challenges, the elimination or mitigation of the abrupt hetero-interfaces should be efficient. In this study, various kinds of solar cell structures are investigated numerically. The structures under various situations of indium composition and degree of polarization are systematically explored. Specifically, the photovoltaic performance, energy band diagrams, electrostatic fields, and recombination rates are analyzed. Then, according to the simulation results, the appropriate solar cell structure which possesses high conversion efficiency is proposed.
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U2 - 10.1117/12.2003716
DO - 10.1117/12.2003716
M3 - Conference contribution
AN - SCOPUS:84878612247
SN - 9780819493897
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
T2 - 2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Y2 - 3 February 2013 through 7 February 2013
ER -