Abstract
The impact of the polarization compensation InGaN interlayer between the heterolayers of Ga-face GaN/InGaN p-i-n solar cells is investigated numerically. Because of the enhancement of carrier collection efficiency, the conversion efficiency is improved markedly, which can be ascribed to both the reduction of the polarization-induced electric field in the InGaN absorption layer and the mitigation of potential barriers at heterojunctions. This beneficial effect is more remarkable in situations with higher polarization, such as devices with a lower degree of relaxation or devices with a higher indium composition in the InGaN absorption layer.
Original language | English |
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Pages (from-to) | 3500-3502 |
Number of pages | 3 |
Journal | Optics Letters |
Volume | 36 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2011 Sep 1 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics