Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers

Jih-Yuan Chang, Bo Ting Liou, Han Wei Lin, Ya Hsuan Shih, Shu-Hsuan Chang, Yen-Kuang Kuo

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The impact of the polarization compensation InGaN interlayer between the heterolayers of Ga-face GaN/InGaN p-i-n solar cells is investigated numerically. Because of the enhancement of carrier collection efficiency, the conversion efficiency is improved markedly, which can be ascribed to both the reduction of the polarization-induced electric field in the InGaN absorption layer and the mitigation of potential barriers at heterojunctions. This beneficial effect is more remarkable in situations with higher polarization, such as devices with a lower degree of relaxation or devices with a higher indium composition in the InGaN absorption layer.

Original languageEnglish
Pages (from-to)3500-3502
Number of pages3
JournalOptics Letters
Issue number17
Publication statusPublished - 2011 Sep 1


All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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