Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes

Yen Kuang Kuo; Jih Yuan Chang; Fang Ming Chen; Ya Hsuan Shih; Hui Tzu Chang

doi:10.1109/JQE.2016.2535252

Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes

Yen Kuang Kuo, Jih Yuan Chang, Fang Ming Chen, Ya Hsuan Shih, Hui Tzu Chang

Research output: Contribution to journal › Article

30 Citations (Scopus)

Abstract

Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.

Original language	English
Article number	7420540
Journal	IEEE Journal of Quantum Electronics
Volume	52
Issue number	4
DOIs	https://doi.org/10.1109/JQE.2016.2535252
Publication status	Published - 2016 Apr

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/JQE.2016.2535252

Fingerprint Dive into the research topics of 'Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes'. Together they form a unique fingerprint.

Cite this

Kuo, Y. K., Chang, J. Y., Chen, F. M., Shih, Y. H., & Chang, H. T. (2016). Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes. IEEE Journal of Quantum Electronics, 52(4), [7420540]. https://doi.org/10.1109/JQE.2016.2535252

@article{165ece40729c4e4ab0fe0c0e19304a8e,

title = "Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes",

abstract = "Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.",

author = "Kuo, {Yen Kuang} and Chang, {Jih Yuan} and Chen, {Fang Ming} and Shih, {Ya Hsuan} and Chang, {Hui Tzu}",

year = "2016",

month = apr,

doi = "10.1109/JQE.2016.2535252",

language = "English",

volume = "52",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes

AU - Kuo, Yen Kuang

AU - Chang, Jih Yuan

AU - Chen, Fang Ming

AU - Shih, Ya Hsuan

AU - Chang, Hui Tzu

PY - 2016/4

Y1 - 2016/4

N2 - Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.

AB - Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.

UR - http://www.scopus.com/inward/record.url?scp=84963724026&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963724026&partnerID=8YFLogxK

U2 - 10.1109/JQE.2016.2535252

DO - 10.1109/JQE.2016.2535252

M3 - Article

AN - SCOPUS:84963724026

VL - 52

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 4

M1 - 7420540

ER -