Abstract
Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.
| Original language | English |
|---|---|
| Article number | 7420540 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 52 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2016 Apr |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes. / Kuo, Yen Kuang; Chang, Jih Yuan; Chen, Fang Ming; Shih, Ya Hsuan; Chang, Hui Tzu.
In: IEEE Journal of Quantum Electronics, Vol. 52, No. 4, 7420540, 04.2016.Research output: Contribution to journal › Article
TY - JOUR
T1 - Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes
AU - Kuo, Yen Kuang
AU - Chang, Jih Yuan
AU - Chen, Fang Ming
AU - Shih, Ya Hsuan
AU - Chang, Hui Tzu
PY - 2016/4
Y1 - 2016/4
N2 - Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.
AB - Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.
UR - http://www.scopus.com/inward/record.url?scp=84963724026&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84963724026&partnerID=8YFLogxK
U2 - 10.1109/JQE.2016.2535252
DO - 10.1109/JQE.2016.2535252
M3 - Article
AN - SCOPUS:84963724026
VL - 52
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 4
M1 - 7420540
ER -