Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes

Yen Kuang Kuo, Jih Yuan Chang, Fang Ming Chen, Ya Hsuan Shih, Hui Tzu Chang

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.

Original languageEnglish
Article number7420540
JournalIEEE Journal of Quantum Electronics
Volume52
Issue number4
DOIs
Publication statusPublished - 2016 Apr

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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