Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes

Yen Kuang Kuo, Jih Yuan Chang, Fang Ming Chen, Ya Hsuan Shih, Hui Tzu Chang

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.

Original languageEnglish
Article number7420540
JournalIEEE Journal of Quantum Electronics
Volume52
Issue number4
DOIs
Publication statusPublished - 2016 Apr

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Carrier transport
Ultraviolet radiation
Light emitting diodes
Diodes
light emitting diodes
injection
Electrons
stairways
ultraviolet radiation
interlayers
leakage
electrons
Polarization
slopes
Crystalline materials
polarization
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{165ece40729c4e4ab0fe0c0e19304a8e,
title = "Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes",
abstract = "Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.",
author = "Kuo, {Yen Kuang} and Chang, {Jih Yuan} and Chen, {Fang Ming} and Shih, {Ya Hsuan} and Chang, {Hui Tzu}",
year = "2016",
month = "4",
doi = "10.1109/JQE.2016.2535252",
language = "English",
volume = "52",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes. / Kuo, Yen Kuang; Chang, Jih Yuan; Chen, Fang Ming; Shih, Ya Hsuan; Chang, Hui Tzu.

In: IEEE Journal of Quantum Electronics, Vol. 52, No. 4, 7420540, 04.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes

AU - Kuo, Yen Kuang

AU - Chang, Jih Yuan

AU - Chen, Fang Ming

AU - Shih, Ya Hsuan

AU - Chang, Hui Tzu

PY - 2016/4

Y1 - 2016/4

N2 - Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.

AB - Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.

UR - http://www.scopus.com/inward/record.url?scp=84963724026&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963724026&partnerID=8YFLogxK

U2 - 10.1109/JQE.2016.2535252

DO - 10.1109/JQE.2016.2535252

M3 - Article

AN - SCOPUS:84963724026

VL - 52

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 4

M1 - 7420540

ER -