Numerical investigation of high-efficiency InGaN-based multijunction solar cell

Jih Yuan Chang, Shih Hsun Yen, Yi An Chang, Bo Ting Liou, Yen Kuang Kuo

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9 Citations (Scopus)

Abstract

A four-junction InGaN-based multijunction solar cell structure is proposed theoretically. The simulation results show that, with the use of appropriately designed compositional grading layers, the performance of InGaN-based multijunction solar cell can be maintained without the cost in performance degradation caused by the polarization-induced electric field and the potential barriers resulting from the heterointerfaces. After the optimization in thicknesses for current matching, a high conversion efficiency of 46.45% can be achieved under 1000-sun AM1.5D illumination, in which the short-circuit current density, open-circuit voltage, and fill factor are 12.2 × 103 mA/cm2, 4.18 V, and 0.77, respectively. The simulation results suggest that, in addition to the detrimental effects caused by the built-in electric polarization and potential barriers, the issue of crystalline quality is another critical factor influencing the performance of multijunction solar cells.

Original languageEnglish
Article number6645380
Pages (from-to)4140-4145
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume60
Issue number12
DOIs
Publication statusPublished - 2013 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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