Abstract
Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW are numerically investigated in this article by using APSYS simulation program. Specifically, band diagram, carrier distribution, and output power have been discussed. According to the simulation results, the structure of staggered QW is proposed to reduce the polarization-related effect; furthermore, the staggered QW structure together with thinner well width is beneficial for improvement of the output power of the blue InGaN SQW LEDs. In this work, the best optical performance is obtained when the quantum-well structure is designed as In0.20Ga0.80N (0.9 nm)-In 0.26Ga0.74N (1.1 nm) owing mainly to the enhanced overlap of electron and hole wavefunctions inside the QW.
| Original language | English |
|---|---|
| Article number | 72111D |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 7211 |
| DOIs | |
| Publication status | Published - 2009 May 5 |
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All Science Journal Classification (ASJC) codes
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
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Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells. / Liou, Bo Ting; Tsai, Miao Chan; Liao, Chih Teng; Yen, Sheng Horng; Kuo, Yen Kuang.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7211, 72111D, 05.05.2009.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells
AU - Liou, Bo Ting
AU - Tsai, Miao Chan
AU - Liao, Chih Teng
AU - Yen, Sheng Horng
AU - Kuo, Yen Kuang
PY - 2009/5/5
Y1 - 2009/5/5
N2 - Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW are numerically investigated in this article by using APSYS simulation program. Specifically, band diagram, carrier distribution, and output power have been discussed. According to the simulation results, the structure of staggered QW is proposed to reduce the polarization-related effect; furthermore, the staggered QW structure together with thinner well width is beneficial for improvement of the output power of the blue InGaN SQW LEDs. In this work, the best optical performance is obtained when the quantum-well structure is designed as In0.20Ga0.80N (0.9 nm)-In 0.26Ga0.74N (1.1 nm) owing mainly to the enhanced overlap of electron and hole wavefunctions inside the QW.
AB - Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW are numerically investigated in this article by using APSYS simulation program. Specifically, band diagram, carrier distribution, and output power have been discussed. According to the simulation results, the structure of staggered QW is proposed to reduce the polarization-related effect; furthermore, the staggered QW structure together with thinner well width is beneficial for improvement of the output power of the blue InGaN SQW LEDs. In this work, the best optical performance is obtained when the quantum-well structure is designed as In0.20Ga0.80N (0.9 nm)-In 0.26Ga0.74N (1.1 nm) owing mainly to the enhanced overlap of electron and hole wavefunctions inside the QW.
UR - http://www.scopus.com/inward/record.url?scp=65349113213&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=65349113213&partnerID=8YFLogxK
U2 - 10.1117/12.808880
DO - 10.1117/12.808880
M3 - Conference article
AN - SCOPUS:65349113213
VL - 7211
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
M1 - 72111D
ER -