Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells

Bo Ting Liou; Miao Chan Tsai; Chih Teng Liao; Sheng Horng Yen; Yen Kuang Kuo

doi:10.1117/12.808880

Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells

Bo Ting Liou, Miao Chan Tsai, Chih Teng Liao, Sheng Horng Yen, Yen Kuang Kuo

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW are numerically investigated in this article by using APSYS simulation program. Specifically, band diagram, carrier distribution, and output power have been discussed. According to the simulation results, the structure of staggered QW is proposed to reduce the polarization-related effect; furthermore, the staggered QW structure together with thinner well width is beneficial for improvement of the output power of the blue InGaN SQW LEDs. In this work, the best optical performance is obtained when the quantum-well structure is designed as In_0.20Ga_0.80N (0.9 nm)-In _0.26Ga_0.74N (1.1 nm) owing mainly to the enhanced overlap of electron and hole wavefunctions inside the QW.

Original language	English
Article number	72111D
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7211
DOIs	https://doi.org/10.1117/12.808880
Publication status	Published - 2009 May 5

All Science Journal Classification (ASJC) codes

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells",

abstract = "Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW are numerically investigated in this article by using APSYS simulation program. Specifically, band diagram, carrier distribution, and output power have been discussed. According to the simulation results, the structure of staggered QW is proposed to reduce the polarization-related effect; furthermore, the staggered QW structure together with thinner well width is beneficial for improvement of the output power of the blue InGaN SQW LEDs. In this work, the best optical performance is obtained when the quantum-well structure is designed as In0.20Ga0.80N (0.9 nm)-In 0.26Ga0.74N (1.1 nm) owing mainly to the enhanced overlap of electron and hole wavefunctions inside the QW.",

author = "Liou, {Bo Ting} and Tsai, {Miao Chan} and Liao, {Chih Teng} and Yen, {Sheng Horng} and Kuo, {Yen Kuang}",

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AU - Liou, Bo Ting

AU - Tsai, Miao Chan

AU - Liao, Chih Teng

AU - Yen, Sheng Horng

AU - Kuo, Yen Kuang

PY - 2009/5/5

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N2 - Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW are numerically investigated in this article by using APSYS simulation program. Specifically, band diagram, carrier distribution, and output power have been discussed. According to the simulation results, the structure of staggered QW is proposed to reduce the polarization-related effect; furthermore, the staggered QW structure together with thinner well width is beneficial for improvement of the output power of the blue InGaN SQW LEDs. In this work, the best optical performance is obtained when the quantum-well structure is designed as In0.20Ga0.80N (0.9 nm)-In 0.26Ga0.74N (1.1 nm) owing mainly to the enhanced overlap of electron and hole wavefunctions inside the QW.

AB - Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW are numerically investigated in this article by using APSYS simulation program. Specifically, band diagram, carrier distribution, and output power have been discussed. According to the simulation results, the structure of staggered QW is proposed to reduce the polarization-related effect; furthermore, the staggered QW structure together with thinner well width is beneficial for improvement of the output power of the blue InGaN SQW LEDs. In this work, the best optical performance is obtained when the quantum-well structure is designed as In0.20Ga0.80N (0.9 nm)-In 0.26Ga0.74N (1.1 nm) owing mainly to the enhanced overlap of electron and hole wavefunctions inside the QW.

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