Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes

Fang Ming Chen, Jih Yuan Chang, Yen Kuang Kuo, Bing Cheng Lin, Hao Chung Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution


For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices X
EditorsJen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka
ISBN (Electronic)9781628414530
Publication statusPublished - 2015 Jan 1
EventGallium Nitride Materials and Devices X - San Francisco, United States
Duration: 2015 Feb 92015 Feb 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherGallium Nitride Materials and Devices X
CountryUnited States
CitySan Francisco

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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