Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes

Fang Ming Chen, Jih Yuan Chang, Yen Kuang Kuo, Bing Cheng Lin, Hao Chung Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices X
EditorsJen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka
PublisherSPIE
ISBN (Electronic)9781628414530
DOIs
Publication statusPublished - 2015 Jan 1
EventGallium Nitride Materials and Devices X - San Francisco, United States
Duration: 2015 Feb 92015 Feb 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9363
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherGallium Nitride Materials and Devices X
CountryUnited States
CitySan Francisco
Period15-02-0915-02-12

Fingerprint

Diode
Ultraviolet
ultraviolet radiation
numerical analysis
Light emitting diodes
Numerical analysis
Numerical Analysis
light emitting diodes
Electron
Electrons
electrons
Overflow
AlGaN
Ultraviolet Rays
Superlattices
Polarization
Doping (additives)
polarization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Chen, F. M., Chang, J. Y., Kuo, Y. K., Lin, B. C., & Kuo, H. C. (2015). Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes. In J-I. Chyi, H. Morkoc, & H. Fujioka (Eds.), Gallium Nitride Materials and Devices X [93632B] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9363). SPIE. https://doi.org/10.1117/12.2077946
Chen, Fang Ming ; Chang, Jih Yuan ; Kuo, Yen Kuang ; Lin, Bing Cheng ; Kuo, Hao Chung. / Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes. Gallium Nitride Materials and Devices X. editor / Jen-Inn Chyi ; Hadis Morkoc ; Hiroshi Fujioka. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).
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title = "Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes",
abstract = "For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.",
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Chen, FM, Chang, JY, Kuo, YK, Lin, BC & Kuo, HC 2015, Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes. in J-I Chyi, H Morkoc & H Fujioka (eds), Gallium Nitride Materials and Devices X., 93632B, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9363, SPIE, Gallium Nitride Materials and Devices X, San Francisco, United States, 15-02-09. https://doi.org/10.1117/12.2077946

Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes. / Chen, Fang Ming; Chang, Jih Yuan; Kuo, Yen Kuang; Lin, Bing Cheng; Kuo, Hao Chung.

Gallium Nitride Materials and Devices X. ed. / Jen-Inn Chyi; Hadis Morkoc; Hiroshi Fujioka. SPIE, 2015. 93632B (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9363).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.

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Chen FM, Chang JY, Kuo YK, Lin BC, Kuo HC. Numerical analysis on the effect of electron blocking layer in 365-nm ultraviolet light-emitting diodes. In Chyi J-I, Morkoc H, Fujioka H, editors, Gallium Nitride Materials and Devices X. SPIE. 2015. 93632B. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2077946