Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes

Fang Ming Chen, Bo Ting Liou, Yi An Chang, Jih Yuan Chang, Yih Ting Kuo, Yen Kuang Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

In this study, a specific design on the electron blocking layer (EBL) by band engineering is investigated numerically with an aim to improve the output performance and to reduce the efficiency droop in green LEDs. Systematic analyses including the energy band diagrams, carrier distributions in the active region, and electron leakage current are given and the simulation results show that the proposed lattice-compensated superlattice-AlGaN/InGaN EBL can provide better optical and electrical output performances when compared to the conventional rectangular AlGaN EBL. The output power of the green LED can be enhanced by a factor of 52% and the applied voltage can be reduced from 5.08 V to 4.53 V at an injection current of 1500 mA. The internal quantum efficiency is improved and the percentage of the efficiency droop can also be reduced from 58% to 37%, which is mainly attributed to the successful suppression of electron leakage current and improvement in hole injection efficiency.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VIII
DOIs
Publication statusPublished - 2013 Jun 12
EventSPIE Symposium on Gallium Nitride Materials and Devices VIII - San Francisco, CA, United States
Duration: 2013 Feb 42013 Feb 7

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8625
ISSN (Print)0277-786X

Other

OtherSPIE Symposium on Gallium Nitride Materials and Devices VIII
CountryUnited States
CitySan Francisco, CA
Period13-02-0413-02-07

Fingerprint

AlGaN
InGaN
Superlattices
Diode
numerical analysis
Light emitting diodes
Numerical analysis
Numerical Analysis
light emitting diodes
Electron
Electrons
Leakage Current
electrons
Leakage currents
output
Output
Injection
leakage
injection
Quantum Efficiency

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Chen, F. M., Liou, B. T., Chang, Y. A., Chang, J. Y., Kuo, Y. T., & Kuo, Y. K. (2013). Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes. In Gallium Nitride Materials and Devices VIII [862526] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8625). https://doi.org/10.1117/12.2003681
Chen, Fang Ming ; Liou, Bo Ting ; Chang, Yi An ; Chang, Jih Yuan ; Kuo, Yih Ting ; Kuo, Yen Kuang. / Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes. Gallium Nitride Materials and Devices VIII. 2013. (Proceedings of SPIE - The International Society for Optical Engineering).
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title = "Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes",
abstract = "In this study, a specific design on the electron blocking layer (EBL) by band engineering is investigated numerically with an aim to improve the output performance and to reduce the efficiency droop in green LEDs. Systematic analyses including the energy band diagrams, carrier distributions in the active region, and electron leakage current are given and the simulation results show that the proposed lattice-compensated superlattice-AlGaN/InGaN EBL can provide better optical and electrical output performances when compared to the conventional rectangular AlGaN EBL. The output power of the green LED can be enhanced by a factor of 52{\%} and the applied voltage can be reduced from 5.08 V to 4.53 V at an injection current of 1500 mA. The internal quantum efficiency is improved and the percentage of the efficiency droop can also be reduced from 58{\%} to 37{\%}, which is mainly attributed to the successful suppression of electron leakage current and improvement in hole injection efficiency.",
author = "Chen, {Fang Ming} and Liou, {Bo Ting} and Chang, {Yi An} and Chang, {Jih Yuan} and Kuo, {Yih Ting} and Kuo, {Yen Kuang}",
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Chen, FM, Liou, BT, Chang, YA, Chang, JY, Kuo, YT & Kuo, YK 2013, Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes. in Gallium Nitride Materials and Devices VIII., 862526, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8625, SPIE Symposium on Gallium Nitride Materials and Devices VIII, San Francisco, CA, United States, 13-02-04. https://doi.org/10.1117/12.2003681

Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes. / Chen, Fang Ming; Liou, Bo Ting; Chang, Yi An; Chang, Jih Yuan; Kuo, Yih Ting; Kuo, Yen Kuang.

Gallium Nitride Materials and Devices VIII. 2013. 862526 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8625).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Chang, Jih Yuan

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AU - Kuo, Yen Kuang

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N2 - In this study, a specific design on the electron blocking layer (EBL) by band engineering is investigated numerically with an aim to improve the output performance and to reduce the efficiency droop in green LEDs. Systematic analyses including the energy band diagrams, carrier distributions in the active region, and electron leakage current are given and the simulation results show that the proposed lattice-compensated superlattice-AlGaN/InGaN EBL can provide better optical and electrical output performances when compared to the conventional rectangular AlGaN EBL. The output power of the green LED can be enhanced by a factor of 52% and the applied voltage can be reduced from 5.08 V to 4.53 V at an injection current of 1500 mA. The internal quantum efficiency is improved and the percentage of the efficiency droop can also be reduced from 58% to 37%, which is mainly attributed to the successful suppression of electron leakage current and improvement in hole injection efficiency.

AB - In this study, a specific design on the electron blocking layer (EBL) by band engineering is investigated numerically with an aim to improve the output performance and to reduce the efficiency droop in green LEDs. Systematic analyses including the energy band diagrams, carrier distributions in the active region, and electron leakage current are given and the simulation results show that the proposed lattice-compensated superlattice-AlGaN/InGaN EBL can provide better optical and electrical output performances when compared to the conventional rectangular AlGaN EBL. The output power of the green LED can be enhanced by a factor of 52% and the applied voltage can be reduced from 5.08 V to 4.53 V at an injection current of 1500 mA. The internal quantum efficiency is improved and the percentage of the efficiency droop can also be reduced from 58% to 37%, which is mainly attributed to the successful suppression of electron leakage current and improvement in hole injection efficiency.

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Chen FM, Liou BT, Chang YA, Chang JY, Kuo YT, Kuo YK. Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes. In Gallium Nitride Materials and Devices VIII. 2013. 862526. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2003681