Novel optical properties of ZnTe/CdSe superlattice

M. C. Kuo, M. J. Ou-yang, C. S. Yang, J. L. Shen, P. Y. Tseng, K. C. Chiu, W. C. Chou, H. Luo, A. Petrou, Yu-Tai Shih

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1 Citation (Scopus)

Abstract

Type II ZnTe/CdSe superlattices were grown by molecular beam epitaxy on a GaAs substrate. Radiative type II transitions between electrons confined in the CdSe and holes confined in the ZnTe were observed in the photoluminescence spectra. For samples with thin CdSe layer, strong absorptive and weak emissive type I transitions, which involves both electrons and holes confined in the CdSe layer, were also found. For the radiative type II transitions, the excitonic activation energy decreases with CdSe layer thickness. While, for the type I emissive transitions, the excitonic activation energy increases with the CdSe layer thickness.

Original languageEnglish
Pages (from-to)178-186
Number of pages9
JournalChinese Journal of Physics
Volume40
Issue number2
Publication statusPublished - 2002 Apr 1

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optical properties
activation energy
superlattices
electrons
molecular beam epitaxy
photoluminescence

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kuo, M. C., Ou-yang, M. J., Yang, C. S., Shen, J. L., Tseng, P. Y., Chiu, K. C., ... Shih, Y-T. (2002). Novel optical properties of ZnTe/CdSe superlattice. Chinese Journal of Physics, 40(2), 178-186.
Kuo, M. C. ; Ou-yang, M. J. ; Yang, C. S. ; Shen, J. L. ; Tseng, P. Y. ; Chiu, K. C. ; Chou, W. C. ; Luo, H. ; Petrou, A. ; Shih, Yu-Tai. / Novel optical properties of ZnTe/CdSe superlattice. In: Chinese Journal of Physics. 2002 ; Vol. 40, No. 2. pp. 178-186.
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title = "Novel optical properties of ZnTe/CdSe superlattice",
abstract = "Type II ZnTe/CdSe superlattices were grown by molecular beam epitaxy on a GaAs substrate. Radiative type II transitions between electrons confined in the CdSe and holes confined in the ZnTe were observed in the photoluminescence spectra. For samples with thin CdSe layer, strong absorptive and weak emissive type I transitions, which involves both electrons and holes confined in the CdSe layer, were also found. For the radiative type II transitions, the excitonic activation energy decreases with CdSe layer thickness. While, for the type I emissive transitions, the excitonic activation energy increases with the CdSe layer thickness.",
author = "Kuo, {M. C.} and Ou-yang, {M. J.} and Yang, {C. S.} and Shen, {J. L.} and Tseng, {P. Y.} and Chiu, {K. C.} and Chou, {W. C.} and H. Luo and A. Petrou and Yu-Tai Shih",
year = "2002",
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Kuo, MC, Ou-yang, MJ, Yang, CS, Shen, JL, Tseng, PY, Chiu, KC, Chou, WC, Luo, H, Petrou, A & Shih, Y-T 2002, 'Novel optical properties of ZnTe/CdSe superlattice', Chinese Journal of Physics, vol. 40, no. 2, pp. 178-186.

Novel optical properties of ZnTe/CdSe superlattice. / Kuo, M. C.; Ou-yang, M. J.; Yang, C. S.; Shen, J. L.; Tseng, P. Y.; Chiu, K. C.; Chou, W. C.; Luo, H.; Petrou, A.; Shih, Yu-Tai.

In: Chinese Journal of Physics, Vol. 40, No. 2, 01.04.2002, p. 178-186.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Novel optical properties of ZnTe/CdSe superlattice

AU - Kuo, M. C.

AU - Ou-yang, M. J.

AU - Yang, C. S.

AU - Shen, J. L.

AU - Tseng, P. Y.

AU - Chiu, K. C.

AU - Chou, W. C.

AU - Luo, H.

AU - Petrou, A.

AU - Shih, Yu-Tai

PY - 2002/4/1

Y1 - 2002/4/1

N2 - Type II ZnTe/CdSe superlattices were grown by molecular beam epitaxy on a GaAs substrate. Radiative type II transitions between electrons confined in the CdSe and holes confined in the ZnTe were observed in the photoluminescence spectra. For samples with thin CdSe layer, strong absorptive and weak emissive type I transitions, which involves both electrons and holes confined in the CdSe layer, were also found. For the radiative type II transitions, the excitonic activation energy decreases with CdSe layer thickness. While, for the type I emissive transitions, the excitonic activation energy increases with the CdSe layer thickness.

AB - Type II ZnTe/CdSe superlattices were grown by molecular beam epitaxy on a GaAs substrate. Radiative type II transitions between electrons confined in the CdSe and holes confined in the ZnTe were observed in the photoluminescence spectra. For samples with thin CdSe layer, strong absorptive and weak emissive type I transitions, which involves both electrons and holes confined in the CdSe layer, were also found. For the radiative type II transitions, the excitonic activation energy decreases with CdSe layer thickness. While, for the type I emissive transitions, the excitonic activation energy increases with the CdSe layer thickness.

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M3 - Article

VL - 40

SP - 178

EP - 186

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

SN - 0577-9073

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Kuo MC, Ou-yang MJ, Yang CS, Shen JL, Tseng PY, Chiu KC et al. Novel optical properties of ZnTe/CdSe superlattice. Chinese Journal of Physics. 2002 Apr 1;40(2):178-186.

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