Novel I-line phase shift mask technique for submicron T-shaped gate formation

Szu Hung Chen, Huang Choung Chang, David K. Fu, Edward Y. Chang, Yeong-Lin Lai, Li Cahng

Research output: Contribution to journalArticle

Abstract

A novel submicron (<0.2 μm) T-shaped gate technology using a phase shift mask (PSM) technique is developed. The 8% half-tone PSM was selected for the definition of the isolated narrow space. Before lithography, a 2000 Å SiN film was deposited on the wafer. After i-line PSM exposure and reactive ion etching (RIE) of the silicon nitride film, openings less than 0.2 μm wide were formed on the SiN film. To further reduce the dimensions of the openings, an additional 566 Å nitride was then deposited on the wafer and etched back using RIE without any mask. An opening of 0.167 μm was formed on the wafer after the dry etching process. The wafer was then coated with another layer of photoresist to form a lift-off structure. The T-shaped gate with a length of 0.167 μm was obtained using this technique. The novel T-shaped gate technology is a high-throughput process for both silicon and compound semiconductor devices.

Original languageEnglish
Pages (from-to)4489-4492
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number7 A
Publication statusPublished - 2002 Jul 1

Fingerprint

Phase shift
Masks
phase shift
masks
wafers
Reactive ion etching
etching
Dry etching
Photoresists
Semiconductor devices
Silicon nitride
semiconductor devices
photoresists
silicon nitrides
Nitrides
Lithography
nitrides
ions
lithography
Throughput

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chen, Szu Hung ; Chang, Huang Choung ; Fu, David K. ; Chang, Edward Y. ; Lai, Yeong-Lin ; Cahng, Li. / Novel I-line phase shift mask technique for submicron T-shaped gate formation. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2002 ; Vol. 41, No. 7 A. pp. 4489-4492.
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Novel I-line phase shift mask technique for submicron T-shaped gate formation. / Chen, Szu Hung; Chang, Huang Choung; Fu, David K.; Chang, Edward Y.; Lai, Yeong-Lin; Cahng, Li.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 7 A, 01.07.2002, p. 4489-4492.

Research output: Contribution to journalArticle

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