Nonlinear bandgap opening behavior of BN co-doped graphene

Bo-Yao Wang, Hsiaotsu Wang, Ling Yen Chen, Hung Chung Hsueh, Xin Li, Jinghua Guo, Yi Luo, Jau Wern Chiou, Wei Hua Wang, Po Hsiang Wang, Kuei Hsien Chen, Yen Chih Chen, Li Chyong Chen, Chia Hao Chen, Jian Wang, Way Faung Pong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have demonstrated a nonlinear behavior for the bandgap opening of doped graphene by controlling the concentration of B and N co-dopants. X-ray absorption and emission spectra reveal that the bandgap increases from 0 to 0.6 eV as the concentration of BN dopants is increased from 0 to 6%, while the bandgap closes when the doping concentration becomes 56%. This nonlinear behavior of bandgap opening of the BN-doped graphene depending on the BN concentrations is consistent with the valence-band photoemission spectroscopic measurements. The spatially resolved B, N and C K-edge scanning transmission x-ray microscopy and their x-ray absorption near-edge structure spectra all support the scenario of the development of h-BN-like domains at high concentrations of BN. Ab initio calculation, by taking into account of the strong correlation between the bandgap and the geometry/concentration of the dopant, has been performed with various BN-dopant nano-domains embedded in the graphene monolayer to verify the unique bandgap behavior. Based on the experimental measurements and ab initio calculation, we propose the progressive formation of a phase-separated zigzag-edged BN domain from BN quantum dots with increasing BN-dopant concentration to explain the extraordinary nonlinear behavior of bandgap opening of BN-doped graphene sheets. This study reveals a new way to engineer the bandgap of low-dimensional systems.

Original languageEnglish
Pages (from-to)857-864
Number of pages8
JournalCarbon
Volume107
DOIs
Publication statusPublished - 2016 Oct 1

Fingerprint

Graphite
Graphene
Energy gap
Doping (additives)
X rays
Wave transmission
X ray absorption
Photoemission
Valence bands
Semiconductor quantum dots
Monolayers
Microscopic examination
Scanning
Engineers
Geometry

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

Wang, B-Y., Wang, H., Chen, L. Y., Hsueh, H. C., Li, X., Guo, J., ... Pong, W. F. (2016). Nonlinear bandgap opening behavior of BN co-doped graphene. Carbon, 107, 857-864. https://doi.org/10.1016/j.carbon.2016.06.091
Wang, Bo-Yao ; Wang, Hsiaotsu ; Chen, Ling Yen ; Hsueh, Hung Chung ; Li, Xin ; Guo, Jinghua ; Luo, Yi ; Chiou, Jau Wern ; Wang, Wei Hua ; Wang, Po Hsiang ; Chen, Kuei Hsien ; Chen, Yen Chih ; Chen, Li Chyong ; Chen, Chia Hao ; Wang, Jian ; Pong, Way Faung. / Nonlinear bandgap opening behavior of BN co-doped graphene. In: Carbon. 2016 ; Vol. 107. pp. 857-864.
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title = "Nonlinear bandgap opening behavior of BN co-doped graphene",
abstract = "We have demonstrated a nonlinear behavior for the bandgap opening of doped graphene by controlling the concentration of B and N co-dopants. X-ray absorption and emission spectra reveal that the bandgap increases from 0 to 0.6 eV as the concentration of BN dopants is increased from 0 to 6{\%}, while the bandgap closes when the doping concentration becomes 56{\%}. This nonlinear behavior of bandgap opening of the BN-doped graphene depending on the BN concentrations is consistent with the valence-band photoemission spectroscopic measurements. The spatially resolved B, N and C K-edge scanning transmission x-ray microscopy and their x-ray absorption near-edge structure spectra all support the scenario of the development of h-BN-like domains at high concentrations of BN. Ab initio calculation, by taking into account of the strong correlation between the bandgap and the geometry/concentration of the dopant, has been performed with various BN-dopant nano-domains embedded in the graphene monolayer to verify the unique bandgap behavior. Based on the experimental measurements and ab initio calculation, we propose the progressive formation of a phase-separated zigzag-edged BN domain from BN quantum dots with increasing BN-dopant concentration to explain the extraordinary nonlinear behavior of bandgap opening of BN-doped graphene sheets. This study reveals a new way to engineer the bandgap of low-dimensional systems.",
author = "Bo-Yao Wang and Hsiaotsu Wang and Chen, {Ling Yen} and Hsueh, {Hung Chung} and Xin Li and Jinghua Guo and Yi Luo and Chiou, {Jau Wern} and Wang, {Wei Hua} and Wang, {Po Hsiang} and Chen, {Kuei Hsien} and Chen, {Yen Chih} and Chen, {Li Chyong} and Chen, {Chia Hao} and Jian Wang and Pong, {Way Faung}",
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Wang, B-Y, Wang, H, Chen, LY, Hsueh, HC, Li, X, Guo, J, Luo, Y, Chiou, JW, Wang, WH, Wang, PH, Chen, KH, Chen, YC, Chen, LC, Chen, CH, Wang, J & Pong, WF 2016, 'Nonlinear bandgap opening behavior of BN co-doped graphene', Carbon, vol. 107, pp. 857-864. https://doi.org/10.1016/j.carbon.2016.06.091

Nonlinear bandgap opening behavior of BN co-doped graphene. / Wang, Bo-Yao; Wang, Hsiaotsu; Chen, Ling Yen; Hsueh, Hung Chung; Li, Xin; Guo, Jinghua; Luo, Yi; Chiou, Jau Wern; Wang, Wei Hua; Wang, Po Hsiang; Chen, Kuei Hsien; Chen, Yen Chih; Chen, Li Chyong; Chen, Chia Hao; Wang, Jian; Pong, Way Faung.

In: Carbon, Vol. 107, 01.10.2016, p. 857-864.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nonlinear bandgap opening behavior of BN co-doped graphene

AU - Wang, Bo-Yao

AU - Wang, Hsiaotsu

AU - Chen, Ling Yen

AU - Hsueh, Hung Chung

AU - Li, Xin

AU - Guo, Jinghua

AU - Luo, Yi

AU - Chiou, Jau Wern

AU - Wang, Wei Hua

AU - Wang, Po Hsiang

AU - Chen, Kuei Hsien

AU - Chen, Yen Chih

AU - Chen, Li Chyong

AU - Chen, Chia Hao

AU - Wang, Jian

AU - Pong, Way Faung

PY - 2016/10/1

Y1 - 2016/10/1

N2 - We have demonstrated a nonlinear behavior for the bandgap opening of doped graphene by controlling the concentration of B and N co-dopants. X-ray absorption and emission spectra reveal that the bandgap increases from 0 to 0.6 eV as the concentration of BN dopants is increased from 0 to 6%, while the bandgap closes when the doping concentration becomes 56%. This nonlinear behavior of bandgap opening of the BN-doped graphene depending on the BN concentrations is consistent with the valence-band photoemission spectroscopic measurements. The spatially resolved B, N and C K-edge scanning transmission x-ray microscopy and their x-ray absorption near-edge structure spectra all support the scenario of the development of h-BN-like domains at high concentrations of BN. Ab initio calculation, by taking into account of the strong correlation between the bandgap and the geometry/concentration of the dopant, has been performed with various BN-dopant nano-domains embedded in the graphene monolayer to verify the unique bandgap behavior. Based on the experimental measurements and ab initio calculation, we propose the progressive formation of a phase-separated zigzag-edged BN domain from BN quantum dots with increasing BN-dopant concentration to explain the extraordinary nonlinear behavior of bandgap opening of BN-doped graphene sheets. This study reveals a new way to engineer the bandgap of low-dimensional systems.

AB - We have demonstrated a nonlinear behavior for the bandgap opening of doped graphene by controlling the concentration of B and N co-dopants. X-ray absorption and emission spectra reveal that the bandgap increases from 0 to 0.6 eV as the concentration of BN dopants is increased from 0 to 6%, while the bandgap closes when the doping concentration becomes 56%. This nonlinear behavior of bandgap opening of the BN-doped graphene depending on the BN concentrations is consistent with the valence-band photoemission spectroscopic measurements. The spatially resolved B, N and C K-edge scanning transmission x-ray microscopy and their x-ray absorption near-edge structure spectra all support the scenario of the development of h-BN-like domains at high concentrations of BN. Ab initio calculation, by taking into account of the strong correlation between the bandgap and the geometry/concentration of the dopant, has been performed with various BN-dopant nano-domains embedded in the graphene monolayer to verify the unique bandgap behavior. Based on the experimental measurements and ab initio calculation, we propose the progressive formation of a phase-separated zigzag-edged BN domain from BN quantum dots with increasing BN-dopant concentration to explain the extraordinary nonlinear behavior of bandgap opening of BN-doped graphene sheets. This study reveals a new way to engineer the bandgap of low-dimensional systems.

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