Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to (NH 4) 2S x-treated n-type GaN layers

Ching Ting Lee, Yow-Jon Lin, Chun Hung Lin

Research output: Contribution to journalArticle

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Abstract

We investigate the nonalloyed ohmic contact of Ti/Al contacts to (NH 4) 2S x-treated n-type GaN layers using x-ray photoelectron spectroscopy analysis. The native oxide on the n-type GaN surface can be completely removed by (NH 4) 2S x solution. The resultant Ga/N ratio was decreased. The deposited Ti is in intimate contact with the (NH 4) 2S x-treated n-type GaN layer. As a result, the TiN interlayer, which has a low work function and low electrical resistivity, is formed easily. The nonalloyed ohmic mechanism results from the formation of a TiN interlayer and the creation of nitrogen vacancies due to the nitrogen outdiffusion from the n-type GaN layer. The nonalloyed ohmic behavior of the as-deposited Ti/Al contacts with (NH 4) 2S x-treated GaN layer was associated with Al/Ti/TiN/n-type GaN.

Original languageEnglish
Pages (from-to)3825-3829
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number7
DOIs
Publication statusPublished - 2002 Oct 1

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interlayers
nitrogen
x ray spectroscopy
electric contacts
photoelectron spectroscopy
electrical resistivity
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to (NH 4) 2S x-treated n-type GaN layers",
abstract = "We investigate the nonalloyed ohmic contact of Ti/Al contacts to (NH 4) 2S x-treated n-type GaN layers using x-ray photoelectron spectroscopy analysis. The native oxide on the n-type GaN surface can be completely removed by (NH 4) 2S x solution. The resultant Ga/N ratio was decreased. The deposited Ti is in intimate contact with the (NH 4) 2S x-treated n-type GaN layer. As a result, the TiN interlayer, which has a low work function and low electrical resistivity, is formed easily. The nonalloyed ohmic mechanism results from the formation of a TiN interlayer and the creation of nitrogen vacancies due to the nitrogen outdiffusion from the n-type GaN layer. The nonalloyed ohmic behavior of the as-deposited Ti/Al contacts with (NH 4) 2S x-treated GaN layer was associated with Al/Ti/TiN/n-type GaN.",
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Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to (NH 4) 2S x-treated n-type GaN layers. / Lee, Ching Ting; Lin, Yow-Jon; Lin, Chun Hung.

In: Journal of Applied Physics, Vol. 92, No. 7, 01.10.2002, p. 3825-3829.

Research output: Contribution to journalArticle

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T1 - Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to (NH 4) 2S x-treated n-type GaN layers

AU - Lee, Ching Ting

AU - Lin, Yow-Jon

AU - Lin, Chun Hung

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AB - We investigate the nonalloyed ohmic contact of Ti/Al contacts to (NH 4) 2S x-treated n-type GaN layers using x-ray photoelectron spectroscopy analysis. The native oxide on the n-type GaN surface can be completely removed by (NH 4) 2S x solution. The resultant Ga/N ratio was decreased. The deposited Ti is in intimate contact with the (NH 4) 2S x-treated n-type GaN layer. As a result, the TiN interlayer, which has a low work function and low electrical resistivity, is formed easily. The nonalloyed ohmic mechanism results from the formation of a TiN interlayer and the creation of nitrogen vacancies due to the nitrogen outdiffusion from the n-type GaN layer. The nonalloyed ohmic behavior of the as-deposited Ti/Al contacts with (NH 4) 2S x-treated GaN layer was associated with Al/Ti/TiN/n-type GaN.

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