Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN

Yow-Jon Lin, Feng Tso Chien, Ching Ting Lee, Chi Shin Lin, Yang Chun Liu

Research output: Contribution to journalArticle

Abstract

Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN (n-AlGaN) was achieved in this study. The surface chemistry and electrical properties of n-AlGaN surfaces were studied via x-ray photoelectron spectroscopy before and after oxidation and wet chemical treatments. The authors found that changes in the contact resistance are dominated by changes in the Al mole fraction and the interface states. Oxidation and HF and (NH4) 2Sx treatments on n-AlGaN led to an increase in the electron affinity (due to a reduction in the Al content at the n-AlGaN surface) and a reduction in the surface band bending (due to more N vacancies and N vacancies being occupied by S (i.e. donor-like states) than Al vacancies and Ga vacancies (i.e. acceptor-like states) near the n-AlGaN surface region), leading to the nonalloyed ohmic contact formation for the Al/Ti/n-AlGaN sample.

Original languageEnglish
Article number175105
JournalJournal of Physics D: Applied Physics
Volume41
Issue number17
DOIs
Publication statusPublished - 2008 Sep 7

Fingerprint

Ohmic contacts
Vacancies
electric contacts
Oxidation
Electron affinity
Interface states
Contact resistance
Photoelectron spectroscopy
Surface chemistry
oxidation
Electric properties
electron affinity
contact resistance
x ray spectroscopy
X rays
electrical properties
aluminum gallium nitride
photoelectron spectroscopy
chemistry

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Lin, Yow-Jon ; Chien, Feng Tso ; Lee, Ching Ting ; Lin, Chi Shin ; Liu, Yang Chun. / Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN. In: Journal of Physics D: Applied Physics. 2008 ; Vol. 41, No. 17.
@article{b6bca40d85084a48ae2ec7cc1436de19,
title = "Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN",
abstract = "Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN (n-AlGaN) was achieved in this study. The surface chemistry and electrical properties of n-AlGaN surfaces were studied via x-ray photoelectron spectroscopy before and after oxidation and wet chemical treatments. The authors found that changes in the contact resistance are dominated by changes in the Al mole fraction and the interface states. Oxidation and HF and (NH4) 2Sx treatments on n-AlGaN led to an increase in the electron affinity (due to a reduction in the Al content at the n-AlGaN surface) and a reduction in the surface band bending (due to more N vacancies and N vacancies being occupied by S (i.e. donor-like states) than Al vacancies and Ga vacancies (i.e. acceptor-like states) near the n-AlGaN surface region), leading to the nonalloyed ohmic contact formation for the Al/Ti/n-AlGaN sample.",
author = "Yow-Jon Lin and Chien, {Feng Tso} and Lee, {Ching Ting} and Lin, {Chi Shin} and Liu, {Yang Chun}",
year = "2008",
month = "9",
day = "7",
doi = "10.1088/0022-3727/41/17/175105",
language = "English",
volume = "41",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "17",

}

Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN. / Lin, Yow-Jon; Chien, Feng Tso; Lee, Ching Ting; Lin, Chi Shin; Liu, Yang Chun.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 17, 175105, 07.09.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN

AU - Lin, Yow-Jon

AU - Chien, Feng Tso

AU - Lee, Ching Ting

AU - Lin, Chi Shin

AU - Liu, Yang Chun

PY - 2008/9/7

Y1 - 2008/9/7

N2 - Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN (n-AlGaN) was achieved in this study. The surface chemistry and electrical properties of n-AlGaN surfaces were studied via x-ray photoelectron spectroscopy before and after oxidation and wet chemical treatments. The authors found that changes in the contact resistance are dominated by changes in the Al mole fraction and the interface states. Oxidation and HF and (NH4) 2Sx treatments on n-AlGaN led to an increase in the electron affinity (due to a reduction in the Al content at the n-AlGaN surface) and a reduction in the surface band bending (due to more N vacancies and N vacancies being occupied by S (i.e. donor-like states) than Al vacancies and Ga vacancies (i.e. acceptor-like states) near the n-AlGaN surface region), leading to the nonalloyed ohmic contact formation for the Al/Ti/n-AlGaN sample.

AB - Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN (n-AlGaN) was achieved in this study. The surface chemistry and electrical properties of n-AlGaN surfaces were studied via x-ray photoelectron spectroscopy before and after oxidation and wet chemical treatments. The authors found that changes in the contact resistance are dominated by changes in the Al mole fraction and the interface states. Oxidation and HF and (NH4) 2Sx treatments on n-AlGaN led to an increase in the electron affinity (due to a reduction in the Al content at the n-AlGaN surface) and a reduction in the surface band bending (due to more N vacancies and N vacancies being occupied by S (i.e. donor-like states) than Al vacancies and Ga vacancies (i.e. acceptor-like states) near the n-AlGaN surface region), leading to the nonalloyed ohmic contact formation for the Al/Ti/n-AlGaN sample.

UR - http://www.scopus.com/inward/record.url?scp=54749105429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54749105429&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/41/17/175105

DO - 10.1088/0022-3727/41/17/175105

M3 - Article

AN - SCOPUS:54749105429

VL - 41

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 17

M1 - 175105

ER -