Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes

Yow Jon Lin, Quantum Ker, Ching Yao Ho, Hsing Cheng Chang, Feng Tso Chien

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

X-ray photoelectron spectroscopy and capacitance-voltage measurements were used to study the relationship between the surface states related to nitrogen-vacancy defects and surface Fermi level pinning. The pinning mechanism was investigated using nickel (Ni) and gold (Au) Schottky diodes fabricated on the (NH4)2Sx-treated and etched n-type GaN(n-GaN) surfaces. The nitrogen-vacancy-related defect played a significant role in Schottky barrier formation.

Original languageEnglish
Pages (from-to)1819-1822
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number3
DOIs
Publication statusPublished - 2003 Aug 1

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Schottky diodes
nitrogen
defects
electrical measurement
Fermi surfaces
capacitance
photoelectron spectroscopy
nickel
gold
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lin, Yow Jon ; Ker, Quantum ; Ho, Ching Yao ; Chang, Hsing Cheng ; Chien, Feng Tso. / Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 3. pp. 1819-1822.
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Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes. / Lin, Yow Jon; Ker, Quantum; Ho, Ching Yao; Chang, Hsing Cheng; Chien, Feng Tso.

In: Journal of Applied Physics, Vol. 94, No. 3, 01.08.2003, p. 1819-1822.

Research output: Contribution to journalArticle

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AU - Chien, Feng Tso

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