X-ray photoelectron spectroscopy and capacitance-voltage measurements were used to study the relationship between the surface states related to nitrogen-vacancy defects and surface Fermi level pinning. The pinning mechanism was investigated using nickel (Ni) and gold (Au) Schottky diodes fabricated on the (NH4)2Sx-treated and etched n-type GaN(n-GaN) surfaces. The nitrogen-vacancy-related defect played a significant role in Schottky barrier formation.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)