Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes

Yow Jon Lin, Quantum Ker, Ching Yao Ho, Hsing Cheng Chang, Feng Tso Chien

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


X-ray photoelectron spectroscopy and capacitance-voltage measurements were used to study the relationship between the surface states related to nitrogen-vacancy defects and surface Fermi level pinning. The pinning mechanism was investigated using nickel (Ni) and gold (Au) Schottky diodes fabricated on the (NH4)2Sx-treated and etched n-type GaN(n-GaN) surfaces. The nitrogen-vacancy-related defect played a significant role in Schottky barrier formation.

Original languageEnglish
Pages (from-to)1819-1822
Number of pages4
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 2003 Aug 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes'. Together they form a unique fingerprint.

Cite this