Negative differential conductance observed in a lateral double constriction device

J. C. Wu, M. N. Wybourne, C. Berven, S. M. Goodnick, Doran D. Smith

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Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.

Original languageEnglish
Pages (from-to)2425-2427
Number of pages3
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 1992 Dec 1


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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