Negative differential conductance observed in a lateral double constriction device

J. C. Wu, M. N. Wybourne, C. Berven, S. M. Goodnick, Doran D. Smith

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.

Original languageEnglish
Pages (from-to)2425-2427
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number20
DOIs
Publication statusPublished - 1992 Dec 1

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constrictions
high electron mobility transistors
hot electrons
diodes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wu, J. C. ; Wybourne, M. N. ; Berven, C. ; Goodnick, S. M. ; Smith, Doran D. / Negative differential conductance observed in a lateral double constriction device. In: Applied Physics Letters. 1992 ; Vol. 61, No. 20. pp. 2425-2427.
@article{a041231aa09b47d1b4665d15e62edabf,
title = "Negative differential conductance observed in a lateral double constriction device",
abstract = "Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.",
author = "Wu, {J. C.} and Wybourne, {M. N.} and C. Berven and Goodnick, {S. M.} and Smith, {Doran D.}",
year = "1992",
month = "12",
day = "1",
doi = "10.1063/1.108186",
language = "English",
volume = "61",
pages = "2425--2427",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

Wu, JC, Wybourne, MN, Berven, C, Goodnick, SM & Smith, DD 1992, 'Negative differential conductance observed in a lateral double constriction device', Applied Physics Letters, vol. 61, no. 20, pp. 2425-2427. https://doi.org/10.1063/1.108186

Negative differential conductance observed in a lateral double constriction device. / Wu, J. C.; Wybourne, M. N.; Berven, C.; Goodnick, S. M.; Smith, Doran D.

In: Applied Physics Letters, Vol. 61, No. 20, 01.12.1992, p. 2425-2427.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Negative differential conductance observed in a lateral double constriction device

AU - Wu, J. C.

AU - Wybourne, M. N.

AU - Berven, C.

AU - Goodnick, S. M.

AU - Smith, Doran D.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.

AB - Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.

UR - http://www.scopus.com/inward/record.url?scp=0001544616&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001544616&partnerID=8YFLogxK

U2 - 10.1063/1.108186

DO - 10.1063/1.108186

M3 - Article

AN - SCOPUS:0001544616

VL - 61

SP - 2425

EP - 2427

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -