Nanorod epitaxial lateral overgrowth of a -plane GaN with low dislocation density

Shih Chun Ling, Chu Li Chao, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Shun Jen Cheng, Jenq Dar Tsay

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The crystal quality of a -plane GaN films was improved by using epitaxial lateral overgrowth on a nanorod GaN template. The investigation of x-ray diffraction showed that the strain in a -plane GaN grown on r -plane sapphire could be mitigated. The average threading dislocation density estimated by transmission electron microscopy was reduced from 3× 1010 to 3.5× 108 cm-2. From the temperature-dependent photoluminescence, the quantum efficiency of the a -plane GaN was enhanced by the nanorod epitaxial lateral overgrowth (NRELOG). These results demonstrated the opportunity of achieving a -plane GaN films with low dislocation density and high crystal quality via NRELOG.

Original languageEnglish
Article number251912
JournalApplied Physics Letters
Volume94
Issue number25
DOIs
Publication statusPublished - 2009 Jul 7

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nanorods
crystals
quantum efficiency
sapphire
x ray diffraction
templates
photoluminescence
transmission electron microscopy
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ling, S. C., Chao, C. L., Chen, J. R., Liu, P. C., Ko, T. S., Lu, T. C., ... Tsay, J. D. (2009). Nanorod epitaxial lateral overgrowth of a -plane GaN with low dislocation density. Applied Physics Letters, 94(25), [251912]. https://doi.org/10.1063/1.3158954
Ling, Shih Chun ; Chao, Chu Li ; Chen, Jun Rong ; Liu, Po Chun ; Ko, Tsung Shine ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung ; Cheng, Shun Jen ; Tsay, Jenq Dar. / Nanorod epitaxial lateral overgrowth of a -plane GaN with low dislocation density. In: Applied Physics Letters. 2009 ; Vol. 94, No. 25.
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Ling, SC, Chao, CL, Chen, JR, Liu, PC, Ko, TS, Lu, TC, Kuo, HC, Wang, SC, Cheng, SJ & Tsay, JD 2009, 'Nanorod epitaxial lateral overgrowth of a -plane GaN with low dislocation density', Applied Physics Letters, vol. 94, no. 25, 251912. https://doi.org/10.1063/1.3158954

Nanorod epitaxial lateral overgrowth of a -plane GaN with low dislocation density. / Ling, Shih Chun; Chao, Chu Li; Chen, Jun Rong; Liu, Po Chun; Ko, Tsung Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung; Cheng, Shun Jen; Tsay, Jenq Dar.

In: Applied Physics Letters, Vol. 94, No. 25, 251912, 07.07.2009.

Research output: Contribution to journalArticle

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AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

AU - Cheng, Shun Jen

AU - Tsay, Jenq Dar

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