Nanorod epitaxial lateral overgrowth of a -plane GaN with low dislocation density

Shih Chun Ling, Chu Li Chao, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Shun Jen Cheng, Jenq Dar Tsay

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The crystal quality of a -plane GaN films was improved by using epitaxial lateral overgrowth on a nanorod GaN template. The investigation of x-ray diffraction showed that the strain in a -plane GaN grown on r -plane sapphire could be mitigated. The average threading dislocation density estimated by transmission electron microscopy was reduced from 3× 1010 to 3.5× 108 cm-2. From the temperature-dependent photoluminescence, the quantum efficiency of the a -plane GaN was enhanced by the nanorod epitaxial lateral overgrowth (NRELOG). These results demonstrated the opportunity of achieving a -plane GaN films with low dislocation density and high crystal quality via NRELOG.

Original languageEnglish
Article number251912
JournalApplied Physics Letters
Volume94
Issue number25
DOIs
Publication statusPublished - 2009 Jul 7

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ling, S. C., Chao, C. L., Chen, J. R., Liu, P. C., Ko, T. S., Lu, T. C., Kuo, H. C., Wang, S. C., Cheng, S. J., & Tsay, J. D. (2009). Nanorod epitaxial lateral overgrowth of a -plane GaN with low dislocation density. Applied Physics Letters, 94(25), [251912]. https://doi.org/10.1063/1.3158954