Nanoparticle-assisted growth of porous germanium thin films

Jiann Shieh, Hsuen Li Chen, Tsung-Shine Ko, Hsu Chun Cheng, Tieh Chi Chu

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

A method for preparing semiconducting porous germanium thin films was discussed. Quantum confinement effects of the nanowire skeleton and the state of the surface at the nanocrystal-oxide interface have been suggested to account for the visible luminescence of porous silicon. Relative to silicon, the excitation in germanium has larger effective Bohr radius, which causes quantum size effects to be achieved. It has been found that when the silicon nano-wire are annealed in hydrogen gas the bare nanowire tend to agglomerate.

Original languageEnglish
Pages (from-to)1121-1124
Number of pages4
JournalAdvanced Materials
Volume16
Issue number13
DOIs
Publication statusPublished - 2004 Jul 5

Fingerprint

Germanium
Silicon
Nanowires
Nanoparticles
Thin films
Quantum confinement
Porous silicon
Nanocrystals
Oxides
Luminescence
Hydrogen
Gases
Wire

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Shieh, Jiann ; Chen, Hsuen Li ; Ko, Tsung-Shine ; Cheng, Hsu Chun ; Chu, Tieh Chi. / Nanoparticle-assisted growth of porous germanium thin films. In: Advanced Materials. 2004 ; Vol. 16, No. 13. pp. 1121-1124.
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Shieh, J, Chen, HL, Ko, T-S, Cheng, HC & Chu, TC 2004, 'Nanoparticle-assisted growth of porous germanium thin films', Advanced Materials, vol. 16, no. 13, pp. 1121-1124. https://doi.org/10.1002/adma.200306541

Nanoparticle-assisted growth of porous germanium thin films. / Shieh, Jiann; Chen, Hsuen Li; Ko, Tsung-Shine; Cheng, Hsu Chun; Chu, Tieh Chi.

In: Advanced Materials, Vol. 16, No. 13, 05.07.2004, p. 1121-1124.

Research output: Contribution to journalArticle

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