Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

Yi Hsun Tsai, Yu Hsun Wu, Yen Yu Ting, Chu Chun Wu, Jenq Shinn Wu, Sheng Di Lin

Research output: Contribution to journalArticle

Abstract

We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.

Original languageEnglish
Article number105001
JournalAIP Advances
Volume9
Issue number10
DOIs
Publication statusPublished - 2019 Oct 1

Fingerprint

molecular beam epitaxy
aluminum
superconducting devices
surface roughness
x rays
photoelectric emission
electron diffraction
platforms
reflectance
oxidation
air
diffraction
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Tsai, Yi Hsun ; Wu, Yu Hsun ; Ting, Yen Yu ; Wu, Chu Chun ; Wu, Jenq Shinn ; Lin, Sheng Di. / Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy. In: AIP Advances. 2019 ; Vol. 9, No. 10.
@article{bfbdafda05fe482c93385d0a87c943ed,
title = "Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy",
abstract = "We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.",
author = "Tsai, {Yi Hsun} and Wu, {Yu Hsun} and Ting, {Yen Yu} and Wu, {Chu Chun} and Wu, {Jenq Shinn} and Lin, {Sheng Di}",
year = "2019",
month = "10",
day = "1",
doi = "10.1063/1.5116044",
language = "English",
volume = "9",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy. / Tsai, Yi Hsun; Wu, Yu Hsun; Ting, Yen Yu; Wu, Chu Chun; Wu, Jenq Shinn; Lin, Sheng Di.

In: AIP Advances, Vol. 9, No. 10, 105001, 01.10.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

AU - Tsai, Yi Hsun

AU - Wu, Yu Hsun

AU - Ting, Yen Yu

AU - Wu, Chu Chun

AU - Wu, Jenq Shinn

AU - Lin, Sheng Di

PY - 2019/10/1

Y1 - 2019/10/1

N2 - We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.

AB - We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.

UR - http://www.scopus.com/inward/record.url?scp=85073207166&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073207166&partnerID=8YFLogxK

U2 - 10.1063/1.5116044

DO - 10.1063/1.5116044

M3 - Article

AN - SCOPUS:85073207166

VL - 9

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 10

M1 - 105001

ER -