Abstract
We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.
| Original language | English |
|---|---|
| Article number | 105001 |
| Journal | AIP Advances |
| Volume | 9 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2019 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy. / Tsai, Yi Hsun; Wu, Yu Hsun; Ting, Yen Yu; Wu, Chu Chun; Wu, Jenq Shinn; Lin, Sheng Di.
In: AIP Advances, Vol. 9, No. 10, 105001, 01.10.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy
AU - Tsai, Yi Hsun
AU - Wu, Yu Hsun
AU - Ting, Yen Yu
AU - Wu, Chu Chun
AU - Wu, Jenq Shinn
AU - Lin, Sheng Di
PY - 2019/10/1
Y1 - 2019/10/1
N2 - We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.
AB - We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.
UR - http://www.scopus.com/inward/record.url?scp=85073207166&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073207166&partnerID=8YFLogxK
U2 - 10.1063/1.5116044
DO - 10.1063/1.5116044
M3 - Article
AN - SCOPUS:85073207166
VL - 9
JO - AIP Advances
JF - AIP Advances
SN - 2158-3226
IS - 10
M1 - 105001
ER -