Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

Yi Hsun Tsai; Yu Hsun Wu; Yen Yu Ting; Chu Chun Wu; Jenq Shinn Wu; Sheng Di Lin

doi:10.1063/1.5116044

Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

Yi Hsun Tsai, Yu Hsun Wu, Yen Yu Ting, Chu Chun Wu, Jenq Shinn Wu, Sheng Di Lin

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.

Original language	English
Article number	105001
Journal	AIP Advances
Volume	9
Issue number	10
DOIs	https://doi.org/10.1063/1.5116044
Publication status	Published - 2019 Oct 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.5116044

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@article{bfbdafda05fe482c93385d0a87c943ed,

title = "Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy",

abstract = "We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.",

author = "Tsai, {Yi Hsun} and Wu, {Yu Hsun} and Ting, {Yen Yu} and Wu, {Chu Chun} and Wu, {Jenq Shinn} and Lin, {Sheng Di}",

note = "Funding Information: The authors acknowledge the technical support from the Center of Nano Science and Technology and the Center of Nano Facility at National Chiao Tung University, Integrated Service Technology Co. Ltd. and Taiwan Semiconductor Research Institute. This work was financially supported by MOST in Taiwan.",

year = "2019",

month = oct,

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doi = "10.1063/1.5116044",

language = "English",

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journal = "AIP Advances",

issn = "2158-3226",

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TY - JOUR

T1 - Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

AU - Tsai, Yi Hsun

AU - Wu, Yu Hsun

AU - Ting, Yen Yu

AU - Wu, Chu Chun

AU - Wu, Jenq Shinn

AU - Lin, Sheng Di

N1 - Funding Information: The authors acknowledge the technical support from the Center of Nano Science and Technology and the Center of Nano Facility at National Chiao Tung University, Integrated Service Technology Co. Ltd. and Taiwan Semiconductor Research Institute. This work was financially supported by MOST in Taiwan.

PY - 2019/10/1

Y1 - 2019/10/1

N2 - We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.

AB - We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.

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