Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

Yi Hsun Tsai, Yu Hsun Wu, Yen Yu Ting, Chu Chun Wu, Jenq Shinn Wu, Sheng Di Lin

Research output: Contribution to journalArticle


We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.

Original languageEnglish
Article number105001
JournalAIP Advances
Issue number10
Publication statusPublished - 2019 Oct 1


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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