Abstract
We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clear transmission electron diffraction, and high optical reflectivity in ultra-violet, have been obtained with a reproducible growth recipe. The atomic-scale metallic aluminum film is formed by the self-limiting oxidation on the 3-nm-thick sample in air and the metallic state is confirmed with X-ray photoemission spectroscopy. Our work paves the way to future integration of aluminum-based plasmonic and superconducting devices on Si platform.
Original language | English |
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Article number | 105001 |
Journal | AIP Advances |
Volume | 9 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2019 Oct 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)