Na-doped Mo target sputtering for Cu(In,Ga)Se2 thin film solar cells

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Abstract

This study employed a Mo-5 % Na thin film on a soda-lime glass substrate as the bottom layers of a Mo back contact using a sputtering process to achieve large area Cu(In,Ga)Se2 (CIGS) cells application and uniform distribution. Our results demonstrate that increasing the ratio of Mo-5 % Na to Mo film thickness (R %) from 0 to 11 % enhanced the crystallinity of the deposited bi-layer Mo film, thereby increasing surface roughness and slightly reducing resistivity. Following selenization, optimal CIGS crystalline characteristics appeared when R % = 8 % (sodium content = 1.57 at.%), such that secondary phases were not generated, and the surface and depth distribution of sodium were uniform.

Original languageEnglish
Pages (from-to)514-519
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume24
Issue number2
DOIs
Publication statusPublished - 2013 Jan 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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