Na-doped Mo target sputtering for Cu(In,Ga)Se2 thin film solar cells

Yi-Cheng or Y. C. Lin; Y. Y. Tu; Chih-Hsiung Shen

doi:10.1007/s10854-012-0935-y

Na-doped Mo target sputtering for Cu(In,Ga)Se₂ thin film solar cells

Yi-Cheng or Y. C. Lin, Y. Y. Tu, Chih-Hsiung Shen

Department of Mechatronic Engineering

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

This study employed a Mo-5 % Na thin film on a soda-lime glass substrate as the bottom layers of a Mo back contact using a sputtering process to achieve large area Cu(In,Ga)Se₂ (CIGS) cells application and uniform distribution. Our results demonstrate that increasing the ratio of Mo-5 % Na to Mo film thickness (R %) from 0 to 11 % enhanced the crystallinity of the deposited bi-layer Mo film, thereby increasing surface roughness and slightly reducing resistivity. Following selenization, optimal CIGS crystalline characteristics appeared when R % = 8 % (sodium content = 1.57 at.%), such that secondary phases were not generated, and the surface and depth distribution of sodium were uniform.

Original language	English
Pages (from-to)	514-519
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	24
Issue number	2
DOIs	https://doi.org/10.1007/s10854-012-0935-y
Publication status	Published - 2013 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Na-doped Mo target sputtering for Cu(In,Ga)Se2 thin film solar cells",

abstract = "This study employed a Mo-5 % Na thin film on a soda-lime glass substrate as the bottom layers of a Mo back contact using a sputtering process to achieve large area Cu(In,Ga)Se2 (CIGS) cells application and uniform distribution. Our results demonstrate that increasing the ratio of Mo-5 % Na to Mo film thickness (R %) from 0 to 11 % enhanced the crystallinity of the deposited bi-layer Mo film, thereby increasing surface roughness and slightly reducing resistivity. Following selenization, optimal CIGS crystalline characteristics appeared when R % = 8 % (sodium content = 1.57 at.%), such that secondary phases were not generated, and the surface and depth distribution of sodium were uniform.",

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AU - Lin, Yi-Cheng or Y. C.

AU - Tu, Y. Y.

AU - Shen, Chih-Hsiung

PY - 2013/1/1

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N2 - This study employed a Mo-5 % Na thin film on a soda-lime glass substrate as the bottom layers of a Mo back contact using a sputtering process to achieve large area Cu(In,Ga)Se2 (CIGS) cells application and uniform distribution. Our results demonstrate that increasing the ratio of Mo-5 % Na to Mo film thickness (R %) from 0 to 11 % enhanced the crystallinity of the deposited bi-layer Mo film, thereby increasing surface roughness and slightly reducing resistivity. Following selenization, optimal CIGS crystalline characteristics appeared when R % = 8 % (sodium content = 1.57 at.%), such that secondary phases were not generated, and the surface and depth distribution of sodium were uniform.

AB - This study employed a Mo-5 % Na thin film on a soda-lime glass substrate as the bottom layers of a Mo back contact using a sputtering process to achieve large area Cu(In,Ga)Se2 (CIGS) cells application and uniform distribution. Our results demonstrate that increasing the ratio of Mo-5 % Na to Mo film thickness (R %) from 0 to 11 % enhanced the crystallinity of the deposited bi-layer Mo film, thereby increasing surface roughness and slightly reducing resistivity. Following selenization, optimal CIGS crystalline characteristics appeared when R % = 8 % (sodium content = 1.57 at.%), such that secondary phases were not generated, and the surface and depth distribution of sodium were uniform.

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