Abstract
This study employed a Mo-5 % Na thin film on a soda-lime glass substrate as the bottom layers of a Mo back contact using a sputtering process to achieve large area Cu(In,Ga)Se2 (CIGS) cells application and uniform distribution. Our results demonstrate that increasing the ratio of Mo-5 % Na to Mo film thickness (R %) from 0 to 11 % enhanced the crystallinity of the deposited bi-layer Mo film, thereby increasing surface roughness and slightly reducing resistivity. Following selenization, optimal CIGS crystalline characteristics appeared when R % = 8 % (sodium content = 1.57 at.%), such that secondary phases were not generated, and the surface and depth distribution of sodium were uniform.
Original language | English |
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Pages (from-to) | 514-519 |
Number of pages | 6 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 24 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2013 Jan 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering