Abstract
This study employed a Mo-5 % Na thin film on a soda-lime glass substrate as the bottom layers of a Mo back contact using a sputtering process to achieve large area Cu(In,Ga)Se2 (CIGS) cells application and uniform distribution. Our results demonstrate that increasing the ratio of Mo-5 % Na to Mo film thickness (R %) from 0 to 11 % enhanced the crystallinity of the deposited bi-layer Mo film, thereby increasing surface roughness and slightly reducing resistivity. Following selenization, optimal CIGS crystalline characteristics appeared when R % = 8 % (sodium content = 1.57 at.%), such that secondary phases were not generated, and the surface and depth distribution of sodium were uniform.
| Original language | English |
|---|---|
| Pages (from-to) | 514-519 |
| Number of pages | 6 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 24 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2013 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Na-doped Mo target sputtering for Cu(In,Ga)Se2 thin film solar cells. / Lin, Yi-Cheng or Y. C.; Tu, Y. Y.; Shen, Chih-Hsiung.
In: Journal of Materials Science: Materials in Electronics, Vol. 24, No. 2, 01.01.2013, p. 514-519.Research output: Contribution to journal › Article
TY - JOUR
T1 - Na-doped Mo target sputtering for Cu(In,Ga)Se2 thin film solar cells
AU - Lin, Yi-Cheng or Y. C.
AU - Tu, Y. Y.
AU - Shen, Chih-Hsiung
PY - 2013/1/1
Y1 - 2013/1/1
N2 - This study employed a Mo-5 % Na thin film on a soda-lime glass substrate as the bottom layers of a Mo back contact using a sputtering process to achieve large area Cu(In,Ga)Se2 (CIGS) cells application and uniform distribution. Our results demonstrate that increasing the ratio of Mo-5 % Na to Mo film thickness (R %) from 0 to 11 % enhanced the crystallinity of the deposited bi-layer Mo film, thereby increasing surface roughness and slightly reducing resistivity. Following selenization, optimal CIGS crystalline characteristics appeared when R % = 8 % (sodium content = 1.57 at.%), such that secondary phases were not generated, and the surface and depth distribution of sodium were uniform.
AB - This study employed a Mo-5 % Na thin film on a soda-lime glass substrate as the bottom layers of a Mo back contact using a sputtering process to achieve large area Cu(In,Ga)Se2 (CIGS) cells application and uniform distribution. Our results demonstrate that increasing the ratio of Mo-5 % Na to Mo film thickness (R %) from 0 to 11 % enhanced the crystallinity of the deposited bi-layer Mo film, thereby increasing surface roughness and slightly reducing resistivity. Following selenization, optimal CIGS crystalline characteristics appeared when R % = 8 % (sodium content = 1.57 at.%), such that secondary phases were not generated, and the surface and depth distribution of sodium were uniform.
UR - http://www.scopus.com/inward/record.url?scp=84878552961&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84878552961&partnerID=8YFLogxK
U2 - 10.1007/s10854-012-0935-y
DO - 10.1007/s10854-012-0935-y
M3 - Article
AN - SCOPUS:84878552961
VL - 24
SP - 514
EP - 519
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 2
ER -