N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

Qian Sun, Yong Suk Cho, Bo Hyun Kong, Hyung Koun Cho, Tsung Shine Ko, Christopher D. Yerino, In Hwan Lee, Jung Han

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Abstract

In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.

Original languageEnglish
Pages (from-to)2948-2952
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number10
DOIs
Publication statusPublished - 2009 May 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Sun, Q., Suk Cho, Y., Kong, B. H., Koun Cho, H., Shine Ko, T., Yerino, C. D., Lee, I. H., & Han, J. (2009). N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition. Journal of Crystal Growth, 311(10), 2948-2952. https://doi.org/10.1016/j.jcrysgro.2009.01.059