TY - JOUR
T1 - N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition
AU - Sun, Qian
AU - Suk Cho, Yong
AU - Kong, Bo Hyun
AU - Koun Cho, Hyung
AU - Shine Ko, Tsung
AU - Yerino, Christopher D.
AU - Lee, In Hwan
AU - Han, Jung
PY - 2009/5/1
Y1 - 2009/5/1
N2 - In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.
AB - In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.
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U2 - 10.1016/j.jcrysgro.2009.01.059
DO - 10.1016/j.jcrysgro.2009.01.059
M3 - Article
AN - SCOPUS:65749090410
VL - 311
SP - 2948
EP - 2952
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 10
ER -