N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

Qian Sun, Yong Suk Cho, Bo Hyun Kong, Hyung Koun Cho, Tsung Shine Ko, Christopher D. Yerino, In Hwan Lee, Jung Han

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.

Original languageEnglish
Pages (from-to)2948-2952
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number10
DOIs
Publication statusPublished - 2009 May 1

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Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
sapphire
Nitridation
interruption
Electron diffraction
Surface morphology
polarity
Nucleation
electron diffraction
nucleation
inversions
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Sun, Qian ; Suk Cho, Yong ; Kong, Bo Hyun ; Koun Cho, Hyung ; Shine Ko, Tsung ; Yerino, Christopher D. ; Lee, In Hwan ; Han, Jung. / N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition. In: Journal of Crystal Growth. 2009 ; Vol. 311, No. 10. pp. 2948-2952.
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abstract = "In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.",
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Sun, Q, Suk Cho, Y, Kong, BH, Koun Cho, H, Shine Ko, T, Yerino, CD, Lee, IH & Han, J 2009, 'N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition', Journal of Crystal Growth, vol. 311, no. 10, pp. 2948-2952. https://doi.org/10.1016/j.jcrysgro.2009.01.059

N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition. / Sun, Qian; Suk Cho, Yong; Kong, Bo Hyun; Koun Cho, Hyung; Shine Ko, Tsung; Yerino, Christopher D.; Lee, In Hwan; Han, Jung.

In: Journal of Crystal Growth, Vol. 311, No. 10, 01.05.2009, p. 2948-2952.

Research output: Contribution to journalArticle

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AU - Sun, Qian

AU - Suk Cho, Yong

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AU - Han, Jung

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