Abstract
In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.
| Original language | English |
|---|---|
| Pages (from-to) | 2948-2952 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 311 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2009 May 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition. / Sun, Qian; Suk Cho, Yong; Kong, Bo Hyun; Koun Cho, Hyung; Shine Ko, Tsung; Yerino, Christopher D.; Lee, In Hwan; Han, Jung.
In: Journal of Crystal Growth, Vol. 311, No. 10, 01.05.2009, p. 2948-2952.Research output: Contribution to journal › Article
TY - JOUR
T1 - N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition
AU - Sun, Qian
AU - Suk Cho, Yong
AU - Kong, Bo Hyun
AU - Koun Cho, Hyung
AU - Shine Ko, Tsung
AU - Yerino, Christopher D.
AU - Lee, In Hwan
AU - Han, Jung
PY - 2009/5/1
Y1 - 2009/5/1
N2 - In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.
AB - In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.
UR - http://www.scopus.com/inward/record.url?scp=65749090410&partnerID=8YFLogxK
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U2 - 10.1016/j.jcrysgro.2009.01.059
DO - 10.1016/j.jcrysgro.2009.01.059
M3 - Article
AN - SCOPUS:65749090410
VL - 311
SP - 2948
EP - 2952
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 10
ER -